2N7002KTB6

2N7002KTB6 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • In compliance with EU RoHS 2002/95/EC directives SOT-563 MECHANICALDATA • Case: SOT-563 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 27 6 5 4 1 2 3 Fig.56 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D ra i n-S o urc e Vo lta g e G a te -S o ur c e Vo lta g e C o nti nuo us D ra i n C urr e nt P uls e d D r a i n C urr e nt 1) O S ym b o l V DS V GS ID ID M T A =2 5 C T A =7 5 O C PD T J ,T S TG RθJA Li mi t 60 +20 11 5 800 200 150 -5 5 to + 1 5 0 883 Uni ts V V mA mA mW O M a xi m um P o we r D i s s i p a ti o n O p e r a ti ng J unc ti o n a nd S to r a g e Te m p e ra tur e Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted)2 C O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE July 13.2010-REV.00 PAGE . 1 2N7002KTB6 ELECTRICALCHARACTERISTICS P a ra m e te r S ta ti c D ra i n-S o urc e B re a k d o wn Vo lta g e G a te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze r o Ga te Vo lta g e D ra i n C ur re nt Gate Body Leakage Forward Transconductance Dynamic To ta l Ga te C ha r g e Tur n- On D e la y Ti m e Tur n- Off D e la y Ti m e Inp ut C a p a c i ta nc e O utp ut C a p a c i ta nc e Re ve r s e Tra ns fe r C a p a c i ta nc e S o urc e - D r a i n D i o d e D i o d e F o rwa r d Vo lta g e C o nti nuo us D i o d e F o r wa rd C ur re nt P uls e d D i o d e F o r wa rd C ur re nt V SD Is Is M IS =2 0 0 m A , V GS =0 V 0 .8 2 1 .3 11 5 800 V mA mA Qg ton t o ff C iss C oss C rss V D S = 2 5 V, V GS =0 V f=1 .0 M H Z V D S = 1 5 V, I D = 2 0 0 m A VGS=4.5V VDD=30V , RL=150Ω ID=200mA , VGEN=10V RG=10Ω 0 .8 20 ns 40 35 10 5 pF nC B V DSS V GS ( th) R D S ( o n) R D S ( o n) ID S S I GS S g fS V GS =0 V, ID =1 0 μ A V D S =V GS , ID =2 5 0 μ A VGS=4.5V, I D=200mA VGS=10V, I D=500mA VDS=60V, VGS=0V V GS =+ 2 0 V, V D S =0 V V D S = 1 5 V, I D = 2 5 0 m A 60 1 100 2 .5 4 .0 Ω 3.0 1 +10 μA μA mS V V S ym b o l Te s t C o nd i ti o n M i n. Typ . M a x. Uni ts Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG July 13.2010-REV.00 PAGE . 2 2N7002KTB6 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O ID - Drain-to-Source Current (A) V GS = 6.0~10V 1 5.0V 5.0V ID - Drain Source Current (A) 1.2 1.2 1 0.8 0.6 0.4 0.2 0 0 V DS=10V 0.8 0.6 0.4 4.0V 4.0V 3.0V 3.0V 0 0 1 2 3 4 5 T J=25℃ 0.2 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) FIG.1- Output Characteristic 5 5 FIG.2- Transfer Characteristic R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 V GS = 4.5V 2 1 0 4 3 ID =500m A II D =200mA D =200m A 2 1 V GS=10V 0 0 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 VGS =10V ID =500mA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) FIG.5- On Resistance vs Junction Temperature July 13.2010-REV.00 PAGE . 3 2N7002KTB6 Vgs Qg V GS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 V DS=10V I D=250mA Vgs(th) Qg(th) Qgs Qsw 0 0.2 0.4 0.6 0.8 1 Qgd Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge ID =250m A BVDSS - Breakdown Voltage (V) 150 1.2 1.1 1 0.9 0.8 0.7 -50 88 86 84 82 80 78 76 74 72 -50 ID = 250uA -25 0 25 50 75 100 o 125 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 10 V GS=0V IS - Source Current (A) 1 0.1 T J=125℃ 25℃ -55℃ 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage July 13.2010-REV.00 PAGE . 4 2N7002KTB6 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 4K per 7" plastic Reel T/R - 10K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. July 13.2010-REV.00 PAGE . 5