2N7002KW_R1_00001

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) 008 0 MECHANICAL DATA • Case: SOT-323 Package • Terminals: Solderable per MIL-STD-750,Method 2026 • Approx weight: 0.0002 ounce, 0.005 gram • Marking: K72 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 60 V Ga te - S o ur c e Vo lta g e V GS +20 V C o nti nuo us D r a i n C ur r e nt ID 11 5 mA P uls e d D r a i n C ur r e nt ID M 800 mA PD 200 120 mW T J ,T S TG -55 t o + 1 50 R θJ A 625 1) M a xi m um P o we r D i s s i p a ti o n Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e r a tur e Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted)2 T A = 2 5 OC T A = 7 5 OC O O C C /W Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t < 10 sec 3.Pulse width