2N7002K_09

2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : K72 • Approx. Weight: 0.008gram Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M PD T J , T S TG R θJ A Li mi t 60 +20 300 2000 350 210 -5 5 to + 1 5 0 357 U ni t s V V mA mA mW O T A = 2 5 OC T A = 7 5 OC O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a ng e M a xi m um P o w e r D i s s i p a t i o n Junction-to Ambient Thermal Resistance(PCB mounted)2 C O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-FEB.3.2009 PAGE . 1 2N7002K ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo lta g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance Dynamic To t a l G a t e C h a r g e Tu r n - O n Ti m e Tu r n - O f f Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a nc e S o ur c e - D r a i n D i o d e D i o d e F o rwa rd Vo lta g e C o nt i nuo us D i o d e F o r w a r d C ur r e nt P ul s e D i o d e F o r w a r d C ur r e nt S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 1 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V , I D=200mA VGS=10V , I D=500mA VDS=60V , VGS=0V V G S =+ 2 0 V , V D S = 0 V V D S = 1 5 V , ID = 2 5 0 m A 60 1 100 - 2 .5 4 .0 V V Ω 3.0 1 +10 uA uA mS Qg ton t o ff C iss C oss C rss V D S = 1 5 V , ID = 2 0 0 m A VGS=5V VDD=30V , RL=150Ω ID=200mA , VGEN=10V RG=10Ω - - 0 .8 20 nC ns 40 35 10 5 pF V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ - V SD IS IS M IS=200mA , VGS=0V - - 0.82 - 1.3 300 2000 V mA mA Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG REV.0.1-FEB.3.2009 PAGE . 2 2N7002K Typical Characteristics Curves (TA=25OC,unless otherwise noted) ID - Drain-to-Source Current (A) V GS = 10V ~ 6.0V 1 5.0V 4.0V I D - Drain Source Current (A) 1.2 1.2 1 0.8 0.6 0.4 V DS=10V 0.8 0.6 0.4 3.0V 0 0 1 2 3 4 5 T J=25 0.2 0 0 1 2 3 4 5 6 0.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 5 5 R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 2 1 0 4 3 V GS=4.5V V GS=10V I D=500mA 2 1 I D=200mA 0 0 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 1.8 1.6 1.4 1.2 1 0.8 V GS=10V I D=500mA 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature REV.0.1-FEB.3.2009 PAGE . 3 2N7002K 10 Vgs Qg V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 V DS=10V I D=250mA Vgs(th) Qsw Qg(th) Qgs Qgd 0 0.2 0.4 0.6 0.8 1 Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge 88 86 84 82 80 78 76 74 72 -50 I D=250uA BVDSS - Breakdown Voltage (V) 1.2 1.1 1 0.9 0.8 0.7 -50 I D=250uA -25 0 25 50 75 100 o 125 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction Temperature 10 IS - Source Current (A) V GS=0V 1 0.1 T J=125 25 -55 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage REV.0.1-FEB.3.2009 PAGE . 4 2N7002K MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.3.2009 PAGE . 5