2N7002K_R1_00001

2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM 0.056(1.40) 0.047(1.20) 0.008(0.20) 0.079(2.00) 0.003(0.08) 0.070(1.80) • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) 0.004(0.10) 0.044(1.10) 0.000(0.00) MECHANICAL DATA 0.035(0.90) 0.020(0.50) • Case: SOT-23 Package 0.013(0.35) • Terminals: Solderable per MIL-STD-750,Method 2026 • Marking: K72 • Approx. Weight: 0.0003 ounce, 0.0084 gram Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 60 V G a t e - S o ur c e Vo l t a g e V GS +20 V C o nt i nuo us D r a i n C ur r e nt ID 300 mA P ul s e d D r a i n C ur r e nt ID M 2000 mA PD 350 210 mW T J , T S TG -5 5 to + 1 5 0 R θJ A 357 1) T A = 2 5 OC T A = 7 5 OC O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a ng e M a xi m um P o w e r D i s s i p a t i o n Junction-to Ambient Thermal Resistance(PCB mounted)2 O O C C /W Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t