2N7002_09

2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives 1 2 3 MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : S72 Drain Gate Source Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l VD S VGS ID ID M TA = 2 5 C TA = 7 5 O C O Li mi t 60 +20 250 1300 350 210 -5 5 to + 1 5 0 357 U ni t s V V mA mA mW O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 PD TJ , TS T G RθJ A C O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.1-FEB.3.2009 PAGE . 1 2N7002 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance Dynamic To t a l G a t e C h a r g e G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n Ti m e Tu r n - O f f Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 2 5 0 m A , V G S = 0 V 0 .9 3 250 1 .2 mA V Qg Qgs Qgd ton t o ff C iss C oss C rss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ VDD=10V , RL=20Ω ID=500mA , VGEN=10V RG=10Ω V D S = 1 5 V , ID = 5 0 0 m A VDD=4.5V 0 .6 0 .1 0 .0 8 9 21 0 .7 15 ns 26 50 25 5 pF nC B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 1 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, I D=75mA VGS=10V, I D=500mA VDS=60V, VGS=0V V G S =+ 2 0 V , V D S = 0 V V D S = 1 5 V , ID = 2 5 0 m A 60 1 200 2 .5 7 .5 Ω 5 1 +100 uA nA mS V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit V IN V DD RL V OUT Gate Charge Test Circuit V GS V DD RL RG 1mA RG REV.0.1-FEB.3.2009 PAGE . 2 2N7002 Typical Characteristics Curves (TA=25 C,unless otherwise noted) O I D - Drain Source Current (A) 1.2 ID - Drain-to-Source Current (A) 1.2 1 0.8 0.6 0.4 0.2 0 0 V GS = 10V ~ 6.0V 5.0V 4.0V V DS=10V 1 0.8 0.6 0.4 0.2 0 0 1 2 3 3.0V T J=25 OC 4 5 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 10 5 I D=500mA R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 2 8 6 V GS=4.5V V GS=10V 4 2 T J=125 OC 1 0 T J=25 OC 2 3 4 5 6 7 8 9 10 0 0 0.2 0.4 0.6 0.8 1 1.2 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 V GS=10V I D=500mA 0.4 -50 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature REV.0.1-FEB.3.2009 PAGE . 3 2N7002 10 Vgs Qg V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 V DS=15V I D=500mA Vgs(th) Qg(th) Qgs Qsw 0 0.2 0.4 0.6 0.8 1 Qgd Qg Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D=250uA 73 72 71 70 69 68 67 66 65 I D=250uA -25 0 25 50 75 100 125 150 64 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) TJ - Junction Temperature (o C) Fig.8 - Threshold Voltage vs Temperature 10 IS - Source Current (A) Fig.9 - Breakdown Voltage vs Junction Temperature V GS=0V 1 T J=25 OC T J=125 OC T J=-55 OC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage REV.0.1-FEB.3.2009 PAGE . 4 2N7002 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.3.2009 PAGE . 5