BAS116

DATA SHEET BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz Pb free product are available : 99% Sn above can meet Rohs environment substance directive request .119(3.00) .110(2.80) 100 Volts POWER 250mWatts SOT- 23 Unit: inch (mm) .056(1.40) .047(1.20) .007(.20)MIN .103(2.60) .083(2.10) .066(1.70) .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) MECHANICAL DATA • Case: SOT-23 plastic • Terminals: Solderable per MIL-STD-202G, Method 208 • Approx weight: 0.008 gram • Marking: BAS116: P1,BAW156:P4,BAV170:P3,BAV199:P2 .035(0.90) .044(1.10) ABSOLUTE RATINGS (each diode) P A R A M E TE R R e ve rs e V o l a g e t P e a k R e ve rs e V o l a g e t C o n t n u o u s F o rw a rd C u rre n t i N o n -re p e t t ve P e a k F o rw a rd S u rg e C u rre n t a t t 1 . u s ii =0 S ym b o l VR V RM IF I FS M V al e u 75 100 0. 2 2. 0 U ni s t V V A A THERMAL CHARACTERISTICS P A R A M E TE R P o w e r D i s i a t o n (N o t 1 ) spi e T h e rm a l R e s i t n c e , J u n c t o n t A m b i n t (N o t 1 ) sa i o e e J u n c t o n Te m p e ra t re i u S t ra g e Te m p e ra t re o u S ym b o l P TO T R θ JA TJ T S TG V al e u 250 500 -5 5 t 1 5 0 o -5 5 t 1 5 0 o O .086(2.20) U ni s t mW C/ W O C C O SINGLE COMMON ANODE COMMON CATHODE SERIES NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. 3 3 3 3 1 BAS116 2 1 BAW156 2 1 BAV170 2 1 BAV199 2 STAD-NOV.15.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) P A R A M E TE R R e ve rs e B re a k d o w n V o l a g e t R e ve rs e C u rre n t S ym b o l V (B R ) IR Te s t C o n d itio n I = 1 0 0 uA R V R =75 V V R = 7 5 V ,T J = 1 5 0 I =1m A F I =10m A F I =50m A F I =150m A F V R = 0 V , f= 1 M H Z I = I = 1 0 m A , R L= 1 0 0 Ω F R MI . N 75 0 .0 0 2 8 .0 5 80 0 .9 1 .0 1 .1 1 .2 5 2 .0 3 .0 TYP. M AX. U n its V nA O C F o rw a rd V o l a g e t VF V To ta l C a p a c ita n c e R e ve rs e R e c o ve ry T im e CT TR R pF us CHARACTERISTIC CURVES (each diode) 10 1000 I R , Reverse Leakage(nA) 1.0 I F , Forward current (mA) 100 T A =-25 C O 0.1 V R =75V 10 0.01 1.0 T A =75 C O T A =125 C O T A =25 C O 0.001 0 50 100 150 200 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj, Junction Temperature (Deg C) V F , Forward Voltage (V) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 C T , Total Capacitance (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 V R , Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage STAD-NOV.15.2004 PAGE . 2 MOUNTING PAD LAYOUT SOT-23 Unit: inch (mm) 0.035(0.9) 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-NOV.15.2004 0.078(2.0) PAGE . 3