BAS116WS_09

BAS116WS_09

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BAS116WS_09 - SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
BAS116WS_09 数据手册
DATA SHEET BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz In compliance with EU RoHS 2002/95/EC directives .078(1.95) .068(1.75) 100 Volts POWER 200mWatts SOD-323 Unit: inch (mm) .054(1.35) .045(1.15) .014(.35) .009(.25) .038(.95) .027(.70) .006(.15) .107(2.7) .090(2.3) MECHANICAL DATA • Case: SOD-323 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.008 gram • Marking: PA .012(.30)MIN. ABSOLUTE RATINGS (each diode) PA RA ME TE R R e ve r s e Vo l t a g e P e a k R e ve r s e Vo l t a g e C o nti nuo us F o r wa r d C ur r e nt N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us I S ym b o l VR V RM I Va lue 75 100 0.2 4.0 Uni ts V V A A F FSM THERMAL CHARACTERISTICS P A R A M E TE R P o w e r D i s i a t o n (N o t 1 ) spi e T h e rm a l R e s i t n c e , J u n c t o n t A m b i n t (N o t 1 ) sa i o e e J u n c t o n Te m p e ra t re i u S t ra g e Te m p e ra t re o u S ym b o l P TO T R θ JA TJ T S TG V al e u 200 625 -5 5 t 1 5 0 o -5 5 t 1 5 0 o O .002(.05) U ni s t mW C/ W O C C O NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. REV.0.2-APR.8.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PA RA ME TE R R e ve r s e B r e a k d o w n Vo l t a g e R e ve r s e C ur r e nt S ym b o l V (B R) I Te s t C o n d i t i o n I R = 1 0 0 uA V R= 7 5 V V R= 7 5 V , TJ= 1 5 0 oC IF = 1 m A IF = 1 0 m A IF = 5 0 m A IF = 1 5 0 m A V R= 0 V , f = 1 M H Z IF = IR = 1 0 m A , R L = 1 0 0 Ω M IN . 75 2.0 8.0 5 80 0.9 1.0 1.1 1.25 2.0 3.0 T YP. MA X . Uni ts V nA R F o rwa rd Vo lta g e VF V To t a l C a p a c i t a n c e R e v e r s e R e c o v e r y Ti m e CT TRR pF us CHARACTERISTIC CURVES (each diode) 10 1000 I R , Reverse Leakage(nA) 1.0 I F , Forward current (mA) 100 T A =-25 C O 0.1 V R =75V 10 0.01 1.0 T A =75 C O T A =125 C O T A =25 C O 0.001 0 50 100 150 200 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj, Junction Temperature (Deg C) V F , Forward Voltage (V) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 C T , Total Capacitance (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 V R , Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage REV.0.2-APR.8.2009 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 5K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.2-APR.8.2009 PAGE . 3
BAS116WS_09 价格&库存

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