BAS116W_08

DATA SHEET BAS116W/BAW156W/BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 200mWatts SOT-323 Unit: inch (mm) FEATURES • • • • Suface mount package ideally suited for automatic insertion. Very low leakage current. 2pA typical at VR=75V. Low capacitance. 4pF max at VR=0V, f=1MHz In compliance with EU RoHS 2002/95/EC directives .004(.10)MIN. .087(2.2) .078(2.0) .006(.15) .002(.05) .087(2.2) .070(1.8) .054(1.35) .045(1.15) .056(1.40) .047(1.20) MECHANICAL DATA • Case: SOT-323 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.0052 gram • Marking: BAS116W :PA,BAW156W :P4,BAV170W :P3,BAV199W :PB .004(.10)MAX. .016(.40) .0 0 8(.20) ABSOLUTE RATINGS (each diode) P A R A M E TE R R e ve rs e V o l a g e t P e a k R e ve rs e V o l a g e t C o n t n u o u s F o rw a rd C u rre n t i N o n -re p e t t ve P e a k F o rw a rd S u rg e C u rre n t a t t 1 . u s ii =0 S ym b o l VR V RM IF I FS M V al e u 75 100 0. 2 4. 0 U ni s t V V A A THERMAL CHARACTERISTICS P A R A M E TE R P o w e r D i s i a t o n (N o t 1 ) spi e T h e rm a l R e s i t n c e , J u n c t o n t A m b i n t (N o t 1 ) sa i o e e J u n c t o n Te m p e ra t re i u S t ra g e Te m p e ra t re o u S ym b o l P TO T R θ JA TJ T S TG V al e u 200 625 -5 5 t 1 5 0 o -5 5 t 1 5 0 o O .044(1.1) .035(0.9) U ni s t mW C/ W O C C O SINGLE COMMON ANODE COMMON CATHODE SERIES NOTE: 1. FR-4 Board = 70 x 60 x 1mm. 3 3 3 3 1 2 BAS116W 1 2 BAW156W 1 2 BAV170W 1 2 BAV199W REV.0.0-DEC.19.2008 PAGE . 1 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) P A R A M E TE R R e ve rs e B re a k d o w n V o l a g e t R e ve rs e C u rre n t S ym b o l V (B R ) IR Te s t C o n d itio n I = 1 0 0 uA R V R =75 V V R = 7 5 V ,T J = 1 5 0 I =1m A F I =10m A F I =50m A F I =150m A F V R = 0 V , f= 1 M H Z I = I = 1 0 m A , R L= 1 0 0 Ω F R MI . N 75 0 .0 0 2 8 .0 5 80 0 .9 1 .0 1 .1 1 .2 5 2 .0 3 .0 TYP. M AX. U n its V nA O C F o rw a rd V o l a g e t VF V To ta l C a p a c ita n c e R e ve rs e R e c o ve ry T im e CT TR R pF us CHARACTERISTIC CURVES (each diode) 10 1000 I R , Reverse Leakage(nA) 1.0 I F , Forward current (mA) 100 T A =-25 C O 0.1 V R =75V 10 0.01 1.0 T A =75 C O T A =125 C O T A =25 C O 0.001 0 50 100 150 200 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj, Junction Temperature (Deg C) V F , Forward Voltage (V) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 C T , Total Capacitance (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 V R , Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage REV.0.0-DEC.19.2008 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-DEC.19.2008 PAGE . 3