BAS21W

DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES VOLTAGE FEATURES .004(.10)MIN. 120-250 Volts POWER 200mWatts SOT-323 Unit: inch (mm) • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion • Electrically Identical to Standard JEDEC • High Conductance • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .004(.10)MAX. .056(1.40) .047(1.20) .087(2.2) .070(1.8) .054(1.35) .045(1.15) .006(.15) .002(.05) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram .016(.40) .078(.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%. P A R A M E TE R M a rki g C o d e n R e ve rse V o l a g e t P e a k R e ve rse V o l a g e t R e ct f e d C urre nt (A ve ra g e ), H a l W a ve R e ct f ca t o n w i h ii f ii i t R e si t ve L o a d a nd f > = 5 0 H z si P e a k F o rw a rd S urg e C urre nt 1 . us ,0 P o w e r D i si a t o n D e ra t A b o ve 2 5 O C spi e M a xi um F o rw a rd V o l a g e a t 0 . A m t 1 M a xi um D C R e ve rse C urre nt a t R a t d D C B l cki g V o l a g e m e o n t T J= 2 5 O C Typ i a l Junct o n C a p a ci a nce ( N o t s1 ) c i t e M a xi um R e ve rse R e co ve ry (N o t s2 ) m e M a xi um T he rm a l R e si t nce m sa O p e ra t ng Junct o n a nd S t ra g e Te m p e ra t re R a ng e i i o u VR V RM I O F I SM S YM B O L B A S 19W A8 100 120 B A S 20W A 80 150 200 200 2. 5 200 1. 0 0. 1 5. 0 50 625 -5 5 t + 1 5 0 o .044(1.1) .035(0.9) B A S 21W A 82 200 250 .087(2.2) .078(2.0) UNI S T V V mA A mW V uA pF ns O P TO T VF R I CJ TR R R θ JA T J, T S TG C /W O C SINGLE NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-MAR.03.2004 PAGE . 1 1000 100 TJ =25OC 100 I R , LEAKAGE CURRENT, uA FORWARD CURRENT, mA 10 10 1.0 1.0 0.1 0.1 0.01 0 1.0 2.0 0.01 0 100 O 200 FORWARD VOLTAGE, VOLTS T J , JUNCTION TEMPERATURE, C Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIG. 1-TYPICAL FORWARD CHARACTERISTIC 4.5 P D , POWER DISSIPATION (mW) 6.0 400 DIODE CAPACITANCE, pF 300 3.0 200 1.5 100 0 0 2 4 6 8 0 50 100 150 O 200 REVERSE VOLTAGE, VOLTS AMBIENT TEMPERATURE( C) FIG. 4 POWER DERATING CURVE FIG. 3 TYPICAL JUNCTION CAPACITANCE STAD-MAR.03.2004 PAGE . 2