BAS40TW

BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L) 4 5 6 2 1 3 FEATURES Maximum forward voltage @ 10mA of 0.5V Maximum leakage current @ 25V of 1.0uA Reverse voltage rating of 40V Also available in lead-free plating (100% matte tin finish) APPLICATIONS Rail-to-rail ESD protection Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports BAS40TW Isolated Triple SOT- 363 Various Configurations (See Diagrams Below) BAS40ADW Common Anode BAS40CDW Common Cathode BAS40SDW Series BAS40RDW Reverse Series 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 Marking Code: S40 Marking Code: S42 Marking Code: S43 Marking Code: S44 Marking Code: S45 MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Current, t = 1sec, Square Wave Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in. Symbol VRRM VR IF I FSM P tot TJ Tstg Value 40 40 200 600 225 -55 to 125 -65 to 125 Units V V mA mA mW °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol R thetaJA Value 556 Units °C/W 8/10/2005 Page 1 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Breakdown Voltage (Note 1) Symbol V BR VF IR CT t rr Conditions I BR = 10uA I F = 1.0mA Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Total Capacitance Reverse Recovery Time (See Figure 1) I F = 10mA I F = 40mA V R = 25V 0Vdc Bias, f =1 MHz I F = 10mA, I R = 10mA R L= 100 Ohms; measured at IRrec = 1mA Min 40 Typ Max 380 500 1000 1.0 5.0 5.0 uA pF ns mV Units V Note 1. Short duration pulse to minimize self-heating effect 820 Ω +10 V 2 .0 k Ω 100 µH 0 .1 µ F IF 0 .1 µ F ? DUT 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA F igure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 8/10/2005 Page 2 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW TYPICAL CHARACTERISTIC CURVES (Per Diode) 100 100 T A = 125 °C (uA) T A = 125 °C R 10 T A = 75 °C (mA) Reverse Leakage Current, I F 10 Forward Current, I 1 1 T A = 75 °C T A = - 25 °C 0.1 T A = 25 °C 0.01 T A = - 25 °C T A = 25 °C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 0 10 20 30 40 Forward Voltage , VF ( V) Reverse Voltage, V R (V) Fig. 2. Typical Forward Characteristics Fig. 3. Typical Reverse Characteristics 4 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 Reverse Voltage, VR (V) Total Capacitance, C T (pF) 30 40 Fig. 4. Typical Capacitance 8/10/2005 Page 3 www.panjit.com BAS40TW/ADW/CDW/SDW/RDW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BAS40xxx T/R7 - 7" reel, 3K units per reel BAS40xxx T/R13 - 13" reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/10/2005 Page 4 www.panjit.com