BAS70TW/ADW/CDW/SDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L)
4 5 6 2 1 3
FEATURES
Maximum forward voltage @ 1.0mA of 0.41V Maximum leakage current @ 50V of 100nA Reverse voltage rating of 70V Also available in lead-free plating (100% matte tin finish)
APPLICATIONS
Rail-to-rail ESD protection Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports
BAS70TW
5 4
SOT- 363 Various Configurations (See Diagrams Below)
Isolated Triple
BAS70ADW
Common Anode
Common Cathode
BAS70CDW
6 5 4
BAS70SDW
Series
6
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: A70
Marking Code: A72
Marking Code: A73
Marking Code: A74
MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted
Rating Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Current, t = 1sec, Square Wave Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol VRRM VR IF I FSM P tot TJ Tstg
Value 70 70 200 0.6 225 -55 to +125 -55 to +125
Units V V mA A mW °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol R thja Value 556 Units °C/W
3/23/2005
Page 1
www.panjit.com
BAS70TW/ADW/CDW/SDW
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted
Parameter Breakdown Voltage (Note 1) Symbol V BR VF IR CD t rr Conditions I BR = 100 uA I F = 1.0 mA Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Junction Capacitance Reverse Recovery Time (See Figure 1) I F = 10 mA
I F = 15 mA
Min 70 -
Typ -
Max 0.41 0.75
1.0
Units V V nA pF ns
V R = 50 V 0Vdc Bias, f =1 MHz I F = 10mA, I R= 10mA R L= 100 Ohms; measured at IRrec = 1mA
-
1.25 -
100 2.0 5
Note 1: Short duration (
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