BAS70TW_09

BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L) 4 5 6 2 1 3 FEATURES Maximum forward voltage @ 1.0mA of 0.41V Maximum leakage current @ 50V of 100nA Reverse voltage rating of 70V In compliance with EU RoHS 2002/95/EC directives APPLICATIONS Rail-to-rail ESD protection Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports BAS70TW Isolated Triple SOT- 363 Various Configurations (See Diagrams Below) BAS70ADW Common Anode BAS70CDW Common Cathode BAS70SDW Series 6 5 4 6 5 4 6 5 4 6 5 4 1 2 3 1 2 3 1 2 3 1 2 3 Marking Code: 70T Marking Code: 70A Marking Code: 70C Marking Code: 70S MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Current, t = 1sec, Square Wave Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range8 Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in. Symbol VRRM VR IF I FSM P tot TJ Tstg Value 70 70 200 0.6 225 -55 to +125 -55 to +125 Units V V mA A mW °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol R thja Value 556 Units °C/W 9/1/2009 Page 1 www.panjit.com BAS70TW/ADW/CDW/SDW ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Breakdown Voltage (Note 1) Symbol V BR VF IR CD t rr Conditions I BR = 100 uA I F = 1.0 mA Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Junction Capacitance Reverse Recovery Time (See Figure 1) I F = 10 mA I F = 15 mA Min 70 - Typ - Max 0.41 0.75 1.0 Units V V nA pF ns V R = 50 V 0Vdc Bias, f =1 MHz I F = 10mA, I R= 10mA R L= 100 Ohms; measured at IRrec = 1mA - 1.25 - 100 2.0 5 Note 1: Short duration (