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BAV199S_04

BAV199S_04

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BAV199S_04 - SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES ARRAY - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
BAV199S_04 数据手册
DATA SHEET BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES ARRAY VOLTAGE FEATURES .053(1.350) .045(1.150) 100 Volts POWER 200mWatts Unit: inch ( mm ) Two isolated diode pairs for significant board space savings Surface mount package ideally suited for automatic insertion Very low leakage current. 5pA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz .087(2.200) .079(2.000) .018(.460) .010(.260) MECHANICAL DATA Case: SOT-363 plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx weight: 0.008 gram Marking: P2 .026(.650)TYP. .055(1.400) .047(1.200) .014(.350) .006(.900) .004(.100)MAX .014(.350) .006(.150) ABSOLUTE RATINGS (each diode) PA RA ME TE R M a xi m um R e ve r s e Vo l t a g e P e a k R e ve r s e Vo l t a g e C o nti nuo us F o r wa r d C ur r e nt N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us I S ym b o l VR V RM I Va lue 100 100 0.2 2.0 U ni t s M a xi m um V V A A F FSM THERMAL CHARACTERISTICS PA R A M E TE R P ow erD i si aton ( ot 1) spi N e Ther alR esi t nce,Juncton t A m bi nt( ot 1) m sa io e Ne Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol P TO T R θJA TJ TI STG Val e u 200 625 - 5 t 150 5o - 5 t 150 5o U nis t mW O .043(1.100) .035(0.900) NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. 6 5 1 STAD-JUL.22.2004 2 .096(2.450) .085(2.150) C/ W O C C O 4 3 PAGE . 1 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PA R A M E TE R R ever e B r akdow n Volage s e t R ever e C urent s r S ym bol V (BR) IR I =100 uA R V R =75 V V R =75 V, J=150 O C T I=1m A F I=10m A F F I=50m A I=150m A F V R =0 V,f 1M H Z = I=I =10m A ,R L=100Ω FR TestC ondii n to MI. N TYP. M AX. 100 5 80 0. 9 1. 0 1. 1 1. 5 2 2. 0 3. 0 U nis t V nA For ar Volage wd t VF V Tot lC apaciance a t R ever e R ecover Ti e s ym CT TRR pF us CHARACTERISTIC CURVES (each diode) 10 V R =25V 1 I F , Forward Current (mA) I R , Reverse Leakage (nA) 1000 100 T A =150 C 10 o T J =-25 C o 0.1 T A =75 oC 0.01 1 T A =25 oC 0.1 0.2 0.4 0.6 0.8 1.0 V F , Forward Voltage (V) 1.2 0.001 0 50 100 150 T J , Junction Temperature (Deg C) 200 Figure 1. Reverse Leakage vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 1.4 C T , Total Capacitance (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 f=1MHz V R , Reverse Voltage (V) Figure 3. Total Capacitance vs. Reverse Voltage STAD-JUL.22.2004 PAGE . 2 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-JUL.22.2004 PAGE . 3
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