BAV19WS_04

DATA SHEET BAV19WS~BAV21WS SURFACE MOUNT SWITCHING DIODES VOLTAGE FEATURES • Fast switching speed. .054(1.35) .078(1.95) .068(1.75) 120-250 Volts POWER 200mWatts SOD-323 Unit: inch (mm) .014(.35) • Electrically Identical to Standard JEDEC • High Conductance .009(.25) • Surface mount package Ideally Suited for Automatic insertion .045(1.15) .006(.15) Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .107(2.7) .090(2.3) MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0045 gram .012(.30)MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. For capacitive load, derate current by 20%. PA RA M E TE R M a r k i ng C o d e R e ve r s e V o l t a g e P e a k R e ve r s e V o l t a g e R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h R e s i s t i ve L o a d a nd f > = 5 0 H z P e a k F o r w a r d S ur g e C ur r e nt , 1 . 0 us P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5 OC M a xi m um F o r w a r d V o l t a g e a t 0 . 1 A M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng V o l t a g e T J = 2 5 OC Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e s 1 ) M a xi m um R e ve r s e R e c o ve r y ( N o t e s 2 ) M a xi m um The r m a l R e s i s t a nc e O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e VR V RM IO IF S M P TOT VF IR CJ T RR R θJ A T J , T S TG S YM B O L B AV 1 9 W S A8 100 120 B AV 2 0 W S A80 150 200 200 2 .5 200 1 .0 0 .1 5 .0 50 640 -5 5 to +1 5 0 O .002(.05) • Both normal and Pb free product are available : .038(.95) .027(.70) B AV 2 1 W S A82 200 250 U N IT S V V mA A mW V uA pF ns C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR=6Volts, RL=100Ω STAD-MAY.18.2004 PAGE . 1 1000 100 TJ =25OC 100 I R , LEAKAGE CURRENT, uA FORWARD CURRENT, mA 10 10 1.0 1.0 0.1 0.1 0.01 0 1.0 2.0 0.01 0 100 O 200 FORWARD VOLTAGE, VOLTS T J , JUNCTION TEMPERATURE, C Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIG. 1-TYPICAL FORWARD CHARACTERISTIC 4.5 P D , POWER DISSIPATION (mW) 6.0 400 DIODE CAPACITANCE, pF 300 3.0 200 1.5 100 0 0 2 4 6 8 0 50 100 150 O 200 REVERSE VOLTAGE, VOLTS AMBIENT TEMPERATURE( C) FIG. 4 POWER DERATING CURVE FIG. 3 TYPICAL JUNCTION CAPACITANCE STAD-MAY.18.2004 PAGE . 2