BC807-40

BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications .007(.20)MIN 45 Volts POWER 225 mWatts SOT- 23 Unit: inch (mm) • PNP epitaxial silicon, planar design .056(1.40) .047(1.20) .119(3.00) .110(2.80) • Collector current I C = 500mA • I n compliance with EU RoHS 2002/95/EC directives .103(2.60) MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 .083(2.10) .066(1.70) .006(.15) .002(.05) .044(1.10) Device Marking : BC807-16 : 7A BC807-25 : 7B BC807-40 : 7C Top View 3 Collector 1 BASE 3 COLLECTOR .006(.15)MAX .020(.50) .013(.35) 1 Base 2 Emitter 2 EMITTER MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL V C EO V C BO V EBO IC PTOT TJ , TSTG Value -45 -50 -5.0 -500 225 -55 to 150 .035(0.90) Approx. Weight: 0.008 gram .086(2.20) UNIT v v v mA mW oC PARAMETER Thermal Resistance , Junction to Ambient SYMBOL RθJA Value 556 UNIT oC /W N ote 1 : Transistor mounted on FR- 4 b oard 7 0x60x1mm. REV.0.0-FEB.12.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0) Collector-Emitter Breakdown Voltage (VEB=0V, Ic=-100uA Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0) Emitter-Base Cutoff Current (VEB=-4V) Collector-Base Cutoff Current (VCB=-20V,IE=0) O TJ =25 C SYMBOL V(BR)CEO V(BR)CES V(BR)EBO I EBO MIN. -45 -50 -5.0 - TYP. - MAX. -100 -0.1 UNIT V V V nA nA uA I C BO -5.0 - TJ DC Current Gain (Ic=-100mA,VCE=-1V) =150O C BC807-16 BC807-25 BC807-40 hFE 100 160 250 40 250 400 600 - - (Ic=-500mA,VcE=-1V) Collector-Emitter Saturation Voltage (Ic=-500mA ,I B=-50mA) Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) Collector-Base Capacitance (VCB=-10v,I E=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz) VCE(SAT) VBE(ON) C C BO fT 100 7.0 - -0.7 -1.2 - V V pF MHz ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 1 50°C TJ = 1 50°C TJ = 2 5°C hFE hFE 100 TJ = 1 00°C TJ = 2 5°C 100 TJ = 1 00°C V CE = 1 V 10 0.01 0.1 1 10 100 1000 10 0.01 0.1 V CE = 1 V 1 10 100 1000 Colle ctor Cur r e nt, IC ( m A) Colle ctor Cur r e nt, IC ( m A) Fig. 1. 1000 BC807-16 Typical hFE vs. IC TJ = 150°C TJ = 25°C Capacitance, C (pF Fig. 2. 100 BC807-25 Typical hFE vs. IC CIB (EB) hFE 100 TJ = 100°C 10 COB (EB) V CE = 1V 10 0.01 0.1 1 10 100 1000 1 0.1 1 10 100 Colle ctor Curre nt, IC ( m A) Reverse Voltage, VR (V) Fig. 3. BC807-40 Typical hFE vs. IC Fig. 4. Typical Capacitances REV.0.0-FEB.12.2009 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-FEB.12.2009 PAGE . 3