BC807

BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications .007(.20)MIN 45 Volts POWER 225 mWatts SOT- 23 Unit: inch (mm) • PNP epitaxial silicon, planar design • Collector current I C = 500mA • Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00) .110(2.80) .103(2.60) MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 .083(2.10) .066(1.70) .006(.15) .002(.05) .044(1.10) Device Marking : BC807-16 : 7A BC807-25 : 7B BC807-40 : 7C Top View 3 Collector 1 BASE 3 COLLECTOR .006(.15)MAX .020(.50) .013(.35) 1 Base 2 Emitter 2 EMITTER MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL V C EO V C BO V EBO IC PTOT TJ , TSTG Value -45 -50 -5.0 -500 225 -55 to 150 .035(0.90) Approx. Weight: 0.008 gram .086(2.20) UNIT v v v mA mW oC PARAMETER Thermal Resistance , Junction to Ambient SYMBOL RθJA Value 556 UNIT oC /W N ote 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in STAD-SEP.24.2005 PAGE . 1 ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0) Collector-Emitter Breakdown Voltage (VEB=0V, Ic=-100uA Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0) Emitter-Base Cutoff Current (VEB=-4V) Collector-Base Cutoff Current (VCB=-20V,IE=0) O TJ =25 C SYMBOL V(BR)CEO V(BR)CES V(BR)EBO I EBO MIN. -45 -50 -5.0 - TYP. - MAX. -100 -0.1 UNIT V V V nA nA uA I C BO -5.0 - TJ DC Current Gain (Ic=-100mA,VCE=-1V) =150O C BC807-16 BC807-25 BC807-40 hFE 100 160 250 40 250 400 600 - - (Ic=-500mA,VcE=-1V) Collector-Emitter Saturation Voltage (Ic=-500mA ,I B=-50mA) Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) Collector-Base Capacitance (VCB=-10v,I E=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz) VCE(SAT) VBE(ON) C C BO fT 100 7.0 - -0.7 -1.2 - V V pF MHz ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 1 50°C TJ = 1 50°C TJ = 2 5°C hFE hFE 100 TJ = 1 00°C TJ = 2 5°C 100 TJ = 1 00°C V CE = 1 V 10 0.01 0.1 1 10 100 1000 10 0.01 0.1 V CE = 1 V 1 10 100 1000 Colle ctor Cur r e nt, IC ( m A) Colle ctor Cur r e nt, IC ( m A) Fig. 1. 1000 BC807-16 Typical hFE vs. IC TJ = 150°C TJ = 25°C Capacitance, C (pF Fig. 2. 100 BC807-25 Typical hFE vs. IC CIB (EB) hFE 100 TJ = 100°C 10 COB (EB) V CE = 1V 10 0.01 0.1 1 10 100 1000 1 0.1 1 10 100 Colle ctor Curre nt, IC ( m A) Reverse Voltage, VR (V) Fig. 3. BC807-40 Typical hFE vs. IC Fig. 4. Typical Capacitances STAD-SEP.24.2005 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-SEP.24.2005 PAGE . 3