BC817_11

BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives 0.120(3.04) 0.110(2.80) 45 Volts POWER 330 mWatts 0.006(0.15)MIN. 0.008(0.20) 0.003(0.08) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0003 ounce, 0.0084 gram • Device Marking : BC817-16 : 8A BC817-25 : 8B BC817-40 : 8C 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10)MAX. MECHANICAL DATA PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PTOT TJ , TSTG Value 45 50 5.0 500 330 -55 to +150 UNIT V V V mA mW oC THERMAL CHARACTERISTICS PARAMETER Thermal Resistance , Junction to Ambient SYMBOL RθJA Value 556 UNIT oC/W Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in January 05,2011-REV.01 PAGE . 1 BC817 SERIES ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0) Collector-Base Breakdown Voltage (V EB=0V, Ic=10μA Emitter-Base Breakdown Voltage (IE=1μA,Ic=0) Emitter-Base Cutoff Current (V EB=5V) Collector-Base Cutoff Current (V CB=20V,IE=0) TJ DC Current Gain (Ic=100mA,V CE=1V) (Ic=500mA,V CE=1V) Collector-Emitter Saturation Voltage (Ic=500mA ,IB=50mA) Base-Emitte Voltage (Ic=500mA,V CE=1.0V) Collector-Base Capacitance (V CB=10V,IE=0,f=1MHz) Current Gain-Bandwidth Product (Ic=10mA,V CE=5V,f=100MHz) V CE(SAT) VBE(ON) C CBO fT =150oC SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO MIN. 45 50 5.0 100 160 250 40 TYP. MAX. 100 100 5.0 - UNIT V V V nA nA μA BC817-16 BC817-25 BC817-40 hFE 250 400 600 - - 100 7.0 - 0.7 1.2 - V V pF MHz ELECTRICAL CHARACTERISTICS CURVES 450 400 250 200 300 350 300 hFE 150 100 50 0 0.01 0.1 1 10 100 1000 hFE V CE = 1V 250 200 150 100 50 0 0.01 0.1 1 VCE = 1V 10 100 1000 Colle ctor Cur r e nt , I C ( m A ) Colle ctor Cur r e nt , IC ( m A ) Fig. 1. BC817-16 Typical hFE vs. I C 100 Fig. 2. BC817-25 Typical hFE vs. I C 700 600 500 Capacitance, CJ (p F) CIB (EB) hFE 400 300 200 100 0 0.01 0.1 1 VCE = 1V 10 100 1000 10 COB (EB) 1 0.1 1 10 100 Reverse Voltage, V (V) R Colle ctor Curre nt , I C ( m A ) Fig. 3 January 05,2011-REV.01 BC817-40 Typical h FE vs. I C Fig. 4 Typical Capacitances PAGE . 2 BC817 SERIES MOUNTING PAD LAYOUT SOT-23 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. January 05,2011-REV.01 PAGE . 3