BC846APN

BC846APN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE FEATURES • Electrically-Isolated Complimentary Transistor Pairs • In compliance with EU RoHS 2002/95/EC directives 65 Volts CURRENT 225 mWatts MECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.006 gram Marking : 46N ABSOLUTE RATINGS-NPN PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous SYMBOL VCEO VCBO VEBO IC VALUE 65 80 6.0 100 UNITS V V V mA ABSOLUTE RATINGS-PNP PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous SYMBOL VCEO VCBO VEBO IC VALUE -65 -80 -5 -100 UNITS V V V mA PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.0-JUN.24.2009 PAGE . 1 BC846APN THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature SYMBOL PTOT RJA TJ TSTG VALUE 225 556 -55 to 150 -55 to 150 UNITS mW O C/W O C C O Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. NP N E L E C TRIC A L C HATA C TE RIS TIC S ( No te 2 ) T J =2 5 o C Unle s s o the rwi s e no te d PA RA ME TE R C o lle c to r - E mi tt e r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B r e a k d o wn Vo lta g e E mi tte r- B a s e C uto ff C ur r e nt C o lle c to r - B a s e C uto ff C ur r e nt D C C urr e nt Ga i n S YMB OL TE S T C OND ITION MIN. 65 TYP. - MA X . - UNITS V V ( B R) C E O IC = 1 0 mA , IB =0 V ( B R) C B O IC = 1 0 uA , IE =0 80 - - V V (B R) E B O IE = 1 0 uA , IC =0 IE B O IC B O V EB =5V V C B = 3 0 V, IE = 0 V C B = 3 0 V, IE = 0 ,TJ =1 5 0 O C IC = 1 0 uA , V C E =5 V 6 .0 - - 100 15 5 .0 - V nA nA uA - hF E - 90 D C C urr e nt Ga i n hF E V C E ( S AT) V C E ( S AT) V C E ( S AT) C CBO IC = 2 .0 mA , V C E = 5 V IC = 1 0 mA , IB =0 .5 mA IC = 1 0 0 mA , IB =5 .0 mA IC = 1 0 mA , IB =0 .5 mA IC = 1 0 0 mA , IB =5 .0 mA IC = 2 mA , V C E = 5 .0 V IC = 1 0 mA , V C E =5 .0 V V C B = 1 0 V, IE = 0 , f=1 MH 11 0 180 220 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5 - C o lle c to r - E mi tt e r S a tura ti o n Vo lta g e B a s e - E mi tte r S a tur a ti o n Vo lta g e B a s e - E mi tte r Vo lta g e C o lle c to r - B a s e C a p a c i ta nc e 0 .5 8 - 0 .7 0 .9 0 .6 6 0 - V V V pF REV.0.0-JUN.24.2009 PAGE . 2 BC846APN P NP E L E C TRIC A L C HATA C TE RIS TIC S ( No te 2 ) T J =2 5 o C Unle s s o the r wi s e no te d PA RA ME TE R C o lle c to r - E mi tt e r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B r e a k d o wn Vo lta g e E mi tte r- B a s e C uto ff C urr e nt C o lle c to r - B a s e C uto ff C ur r e nt D C C urr e nt Ga i n S YMB OL TE S T C OND ITION MIN. -65 TYP. - MA X . - UNITS V V ( B R) C E O IC = -1 0 mA , IB = 0 V ( B R) C B O IC = -1 0 uA , IE =0 -80 - - V V ( B R) E B O IE = -1 uA , IC = 0 IE B O IC B O V E B = -5 V V C B = -3 0 V, IE = 0 V C B = -3 0 V, IE = 0 ,T J =1 5 0 O C IC = -1 0 uA , V C E =- 5 V - 5 .0 - - -10 0 -15 -4 .0 - V nA nA uA - hF E - 90 D C C urr e nt Ga i n hF E V C E ( S AT) V C E ( S AT) V C E ( S AT) C CBO IC = -2 .0 mA , V C E =- 5 V IC = -1 0 mA , IB = -0 .5 mA IC = -1 0 0 mA , IB =- 5 .0 mA IC = -1 0 mA , IB = -0 .5 mA IC = -1 0 0 mA , IB =- 5 .0 mA IC = -2 mA , V C E =- 5 .0 V IC = -1 0 mA , V C E = - 5 .0 V V C B = -1 0 V, IE = 0 , f=1 MH 11 0 180 220 -0.30 -0.65 -0.75 -0.82 4 .5 - C o lle c to r - E mi tt e r S a t ura ti o n Vo lta g e B a s e - E mi tte r S a tur a ti o n Vo lta g e B a s e - E mi tte r Vo lta g e C o lle c to r - B a s e C a p a c i ta nc e -0.60 - -0.7 -0.9 - V V V pF REV.0.0-JUN.24.2009 PAGE . 3 BC846APN NPN ELECTRICAL CHARACTERISTICS CURVE 300 250 200 hF E T J =150 oC 10 Capacitance, C (pF) T J =25 C C IB (EB) o T J =100 oC T J =25 C o 150 100 50 0 0.01 V CE =5V C OB (CB) 1 Collector Current, I C (mA) 0.1 1 10 100 1000 0.1 1 10 100 Reverse Voltage(V) Fig.2- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE Fig.1- TYPICAL h FE vs. Collector Current PNP ELECTRICAL CHARACTERISTICS CURVE 600 T J=150 OC 14 12 Capacitance,C(pF) 500 400 hFE O T J =25 C C IB (EB) o 10 8 6 4 2 T J=100 C 300 T J=25 OC 200 100 0 0.01 V CE=-5V C OB (CB) 0.1 1 10 100 0 0.1 1 10 100 Collector Current,I C(mA) Reverse Voltage,V R(V) Fig.1- TYPICAL h FE vs. Collector Current Fig.2- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE REV.0.0-JUN.24.2009 PAGE . 4 BC846APN MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-JUN.24.2009 PAGE . 5