BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives
0.087(2.20) 0.070(1.80) 0.004(0.10)MIN. 0.044(1.10) 0.035(0.90) 0.087(2.20) 0.078(2.00)
30/45/65 Volts
CURRENT
150 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0001 ounce, 0.005 gram
0.054(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 0.006(0.15) 0.002(0.05)
0.004(0.10)MAX.
0.016(0.40) 0.008(0.20)
Device Marking: BC846AW=46A BC846BW=46B BC847AW=47A BC847BW=47B BC848AW=48A BC848BW=48B BC849BW=49B BC850BW=50B
BC847CW=47C BC848CW=48C
BC849CW=49C BC850CW=50C
ABSOLUTE RATINGS
PARAMETER Collector - Emitter Voltage BC846W BC847W, BC850W BC848W, BC849W BC846W BC847W, BC850W BC848W, BC849W BC846W BC847W, BC850W BC848W, BC849W Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Units V
Collector - Base Voltage
VCBO
V
Emitter - Base Voltage
VEBO
V
Collector Current - Continuous
IC
mA
THERMAL CHARACTERISTICS
PARAMETER Max Power Dissipation (Note 1) Thermal Resistance Junction Temperature Storage Temperature Symbol PTOT RθJA RθJC TJ TSTG Value 150 400 100 -55 to 150 -55 to 150 Units mW
O
C/W
O
C C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. December 17,2010-REV.00 PAGE . 1
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS
PA RA ME TE R B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W S ym bo l Te st C o nd i ti o n MIN. 65 45 30 80 50 30 6.0 6.0 5.0 TYP. MA X . Uni ts
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
V (B R) C E O IC =1 0 mA , IB =0
-
-
V
C o lle c to r - B as e B re a k d o wn Vo lta g e
V (B R) C B O IC =1 0 μ A , IE =0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V ( B R) E B O IE =1 0 μ A , IC =0
-
-
V
E mi tte r-B a s e C uto ff C urre nt C o lle c to r-B a s e C uto ff C urre nt D C C urre nt Ga i n B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W" B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W"
IE B O IC B O
V E B =5 V C B =3 0V, IE =0 V C B =3 0V, IE =0 ,T J =1 5 0 O C IC =1 0 μ A , V C E =5 V
90 150 270 180 290 520 0 .7 0 .9 0 .6 6 0 -
100 15 5 .0 -
nA nA μA -
hFE
-
D C C urre nt Ga i n
hFE
IC =2 .0 mA , V C E =5 V IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =2 mA , V C E =5 .0 V IC =1 0 mA , V C E =5 .0 V V C B =1 0V, IE =0 , f=1 MH
11 0 200 420 0 .5 8 -
220 450 800 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5
-
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e B a se - E mi tte r S a tura ti o n Vo lta g e B a se - E mi tte r Vo lta g e C o lle c to r - B as e C a p a ci ta nce
V C E (S AT) V C E (S AT) V C E (S AT) C CBO
V V V pF
December 17,2010-REV.00
PAGE . 2
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW)
100 VCB=30V
300 TJ =150˚ C 250 TJ=100˚ C
ICB0, Collector Current (nA)
10
hF E
200
150
TJ=25 C
1
100
50
VCE=5V
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
0 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
Fig. 2. Typical hFE vs. Collector Current
1000
1000 TJ = 25 ˚C 800
VCE(sat) (mV) ,
VBE(ON) (mV) ,
TJ = 100 ˚C
TJ = 100 ˚C TJ = 150 ˚C
600
100
400 VCE=5V 200 TJ = 150 ˚C
TJ = 25 ˚C IC/IB=20
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10 TJ = 25 ˚C
1000 TJ = 25 ˚C 800
Cib (EB)
VBE(sat) (mV) ,
TJ = 100 ˚C
600
Capacitance, C (pF )
400 IC/IB=20
Cob (CB)
200
TJ = 150 ˚C
0 0.01
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
December 17,2010-REV.00
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 3
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
100 VCB=30V
500 450 400 TJ =150˚ C VCE=5V
ICB0, Collector Current (nA)
10
hF E
350 300 250 200
TJ=100˚ C
TJ =25 ˚C
1
150 100 50
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
0 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000
Fig. 2. Typical hFE vs. Collector Current
1000 TJ = 25 ˚C TJ = 100 ˚C
VCE(sat) (mV) ,
100 TJ = 100 ˚C TJ = 150 ˚C
800 VBE(ON) (mV) ,
600
400 VCE=5V
TJ = 25 ˚C IC/IB=20
200
TJ = 150 ˚C
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1000 TJ = 25 ˚C 800 TJ = 100 ˚C
Cib (EB)
TJ = 25 ˚C
600
Capacitance, C (pF )
VBE(sat) (mV) ,
Cob (CB)
400
200
TJ = 150 ˚C
IC/IB=20
0 0.01
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
December 17,2010-REV.00
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC846AW ~ BC850CW
ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW)
100 VCB=30V
1200 VCE=5V
ICB0, Collector Current (nA)
1000
TJ =150˚ C
10
hF E
800
TJ =100˚ C
600
TJ =25 C
1
400
200
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
0 0.01
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000
Fig. 2. Typical hFE vs. Collector Current
1000
800
TJ = 100 ˚C
TJ = 25 ˚C
VCE(sat) (mV) ,
TJ = 150 ˚C
VBE(ON) (mV) ,
TJ = 100 ˚C 100
600
400
TJ = 25 ˚C
200
TJ = 150 ˚C
VCE=5V
IC/IB=20
0 0.01
0.1
1
10
100
1000
10 0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1000
Cib (EB)
800
TJ = 25 ˚C
VBE(sat) (mV) ,
TJ = 100 ˚C
600
400 IC/IB=20 TJ = 150 ˚C 0 0.01
Capacitance, C (pF )
TJ = 25 ˚C
Cob (CB)
200
1
0.1 1 10 100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
December 17,2010-REV.00
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 5
BC846AW ~ BC850CW
MOUNTING PAD LAYOUT
SOT-323
ORDER INFORMATION
• Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel
LEGAL STATEMENT Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
December 17,2010-REV.00
PAGE . 6
