BC847BFN3

BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) 45 Volts CURRENT 250 mWatts DFN 3L 0.042(1.05) 0.037(0.95) Unit : inch(mm) • General purpose amplifier applications MECHANICAL DATA Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Marking: AE 0.0 22 (0.55) 0.047(0.45) 0.002(0.05) MAX. 0.013(0.32) 0.008(0.22) 0.022 (0.55) 0.047(0.45) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.0 14 (0.20) 2 3 1 ABSOLUTE RATINGS P a r a m e te r Collector - E mitter Voltage Collector - B ase Voltage Emitter - B ase Voltage Collector Current - C ontinuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 0.0 08 (0.20) 0.004(0.10) 0.0 08 (0.20) 0.004(0.10) Units V V V mA THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient J unc ti o n Te m p e r a tur e S to r a g e Te m p e r a tur e Symbol PTOT RJA TJ T S TG Value 250 500 -5 5 t o + 1 5 0 -5 5 t o + 1 5 0 Units mW O C/W O C C O Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.4-AUG.17.2009 PAGE . 1 BC847BFN3 ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA M E TE R O F F C H A R A C T E R IS T IC S C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - E mi tte r B re a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e C o l l e c t o r C ut o f f C ur r e nt O N C H A R A C T E R IS T IC S D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E mi tte r Vo lta g e S M A L L - S IG N A L C H A R A C T E R IS T IC S C ur r e nt - G a i n- B a nd w i d t h P r o d uc t O ut p ut C a p a c i t a nc e N o i s e F i g ur e fT Cobo NF IC = 1 0 m A , V C E = 5 . 0 V d c , f = 1 0 0 M H Z V C B =1 0 V,f=1 .0 MHZ IC = 0 . 2 m A , V C E = 5 . 0 V d c , RS =2 .0 k Ω,f=1 .0 k HZ , B W =2 0 0 HZ 100 4 .5 10 MHZ pF dB hF E VC E (S AT) V B E ( S AT) V B E (ON) IC = 2 . 0 m A , V C E = 5 V IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V 200 0 .6 0 .8 580 660 450 0 .2 5 0 .6 0 .9 1 .0 700 770 V V mV V(B R )C E O V(B R )C E S V(B R )C B O V (B R )E B O IC B O IC = 1 0 m A IC = 1 0 u A , V E B = 0 IC = 1 0 u A IE = 1 0 u A V C B =3 0 V, V C B = 3 0 V, TA = 1 5 0 O C 45 50 50 6 .0 15 5 .0 V V V V nA uA S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t REV.0.4-AUG.17.2009 PAGE . 2 BC847BFN3 ELECTRICAL CHARACTERISTICS CURVE 2.0 1.5 hFE, NORMALIZED DC CURRENT GAIN 1.0 V CE =10V O T A =25 C V, VOLTAGE (VOLTS) T A =25 C 0.8 O V BE (sat) @ I C /I B =10 V BE (on) @ V CE =10V 1.0 0.8 0.6 0.6 0.4 0.4 0.3 0.2 V CE (sat) @ I C /I B =10 0 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT(mAdc) Figure 1. Normalized DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT(mAdc) Figure 2. "Saturation" and " On " Voltages 1.0 2.0 T A =25 C 1.6 O O q VB, TEMPER ATURE COEFFI CIENT (mA/ C) -55 OC to 125 OC 1.2 200mA 1.2 1.6 I C= I C= 10mA 2 0mA 0.8 50mA 100mA 2.0 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 4. Base-Emitter Temperature Coefficient fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 10 400 300 200 7.0 C, CAPACITA NCE (pF) T A =25 C Cio O 50 30 100 80 60 40 30 20 0.5 0.7 V CE =10V O T A =25 C Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance I C , COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain-Bandwidth Product REV.0.4-AUG.17.2009 PAGE . 3 BC847BFN3 ELECTRICAL CHARACTERISTICS CURVE 1.0 r(t), TRANSIEN T THERMAL RESISTAN CE(NORM ALIZED) D-0.5 0.2 0.1 0.1 0.05 0.02 P(pk) t1 t2 Z q JA (t)=r(t) R q JA R q JA =328 OC/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) -TC=P (pk) R q JC (t) 0.01 0.01 DUTY CYCLE, D-t1/t2 SINGEL PULSE 0.001 0 1.0 10 100 1.0K t, TIME(ms) Figure 7. Thermal Response 10K 100K 1.0M -200 I C , COLLECTO R CURRENT (mA) 1s 3ms -100 -50 T A =25 C O T J =25 OC -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. O The data of Figure 26 is based upon Tj(pk)=150 C; Tc or Ta is variable depending upon conditions. Pulse curves are O valid for duty cycles to 10% prodided Tj(pk) < 150 C. Tj(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary break-down. -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 V CE , COLLECTOR-EMITTER VOLTAGE(V) Figure 8. Active Region Safe Operating Area REV.0.4-AUG.17.2009 PAGE . 4 BC847BFN3 MOUNTING PAD LAYOUT DFN 3L 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.02 8 (0.70) 0.004 (0.10) 0.02 7 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.4-AUG.17.2009 0.010 (0.25) 0.024 (0.60) PAGE . 4