BC847BPN

BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications where board space is at a premium. 4 SOT- 363 FEATURES Electrically-Isolated Complimentary Transistor Pairs In compliance with EU RoHS 2002/95/EC directives 5 6 2 1 3 6 5 4 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: 47P MAXIMUM RATINGS - NPN Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current 1 2 3 TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEBO IC Value 50 45 6.0 100 Units V V V mA MAXIMUM RATINGS - PNP Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEBO IC Value -50 -45 -5.0 -100 Units V V V mA THERMAL CHARACTERISTICS Characteristic Symbol Value Units Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient (Note 1) PD TJ Tstg R thja 200 -55 to +150 mW °C °C °C/W -55 to +150 556 Note 1. FR-4 board 70 x 60 x 1mm with minimum recommended pad layout 3/5/2009 Page 1 www.panjit.com BC847BPN NPN ELECTRICAL CHARACTERISTICS (Note 2) Parameter Symbol Conditions Collector-Emitter Breakdown VoltageV (BR)CEO I C = 10mA Collector-Emitter Breakdown VoltageV (BR)CES I C = 10uA, V EB= 0 Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain V (BR)EBO I E = 1.0uA ICBO IEBO h FE VCB= 30V, I E = 0 V EB= 5V, I C= 0 V CE= 5V, I C= 2.0mA I C = 10mA, I B = 0.5mA I C = 100mA, I B = 5mA TJ =150°C TJ = 25°C Unless otherwise noted Min 45 50 50 6.0 200 0.58 100 Typ 0.75 7 Max 15 5 100 450 0.1 0.4 0.7 1.5 Units V V V V nA uA nA V V V V MHz pF pF Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance VBE(SAT) I C = 10mA, I B = 0.5mA V BE fT CCBO CEBO V CE= 5V, I C= 2.0mA V CE= 5V, I C= 10mA f = 100MHz VCB= 10V, f =1.0MHz VEB = 0.5V, f =1.0MHz PNP ELECTRICAL CHARACTERISTICS (Note 2) Parameter Symbol Conditions Collector-Emitter Breakdown VoltageV (BR)CEO I C = -10mA Collector-Emitter Breakdown VoltageV (BR)CES I C = -10uA, VEB = 0 Collector-Base Breakdown Voltage V (BR)CBO I C = -10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain V (BR)EBO I E = -1.0uA ICBO IEBO h FE VCB= -30V, I E = 0 V EB= -5V, I C = 0 V CE= -5V, I C = -2.0mA I C = -10mA, I B = -0.5mA I C = -100mA, IB = -5mA T = 25°C Unless otherwise noted J Min -45 -50 -50 -5.0 - Typ -0.7 11 Max -15 -4.0 -100 475 -0.3 -0.65 -0.75 4.5 - Units V V V V nA uA nA V V V V MHz pF pF TJ =150°C 200 -0.6 100 - Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance VBE(SAT) I C = -10mA, I B = -0.5mA V BE fT CCBO CEBO V CE= -5V, I C = -2.0mA V CE= -5V, I C = -10mA f = 100MHz VCB= -10V, f =1.0MHz VEB = -0.5V, f =1.0MHz Note 2. Short duration test pulse used to minimize self-heating 3/5/2009 Page 2 www.panjit.com BC847BPN PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BC847BPN T/R7 - 3,000 units per 7 inch reel BC847BPN T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 200 9 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 3/5/2009 Page 3 www.panjit.com