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BC848

BC848

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BC848 - NPN GENERAL PURPOSE TRANSISTORS - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BC848 数据手册
BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • I n compliance with EU RoHS 2002/95/EC directives 30/45/65 Volts CURRENT 225 mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram D evi e M ar i g: c kn B C 846A =46A B C 846B =46B B C 847A =47A B C 847B =47B B C 847C =47C B C 848A =48A B C 848B =48B B C 848C =48C B C 849B =49B B C 849C =49C B C 850B =50B B C 850C =50C ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Units V Collector - Base Voltage VCBO V Emitter - Base Voltage VEBO V Collector Current - Continuous IC mA THERMAL CHARACTERISTICS PA R A M E TE R M ax P ow erD i si aton ( ot 1) spi Ne Ther alR esi t nce ,Juncton t A m bi nt m sa io e Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol P TO T R θJA TJ STG TI Val e u 225 556 - 5 t 150 5o - 5 t 150 5o U nis t mW O C/ W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0.3-FEB.10.2009 PAGE . 1 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS PA RA M E TE R B C 8 4 6 A /B C o lle c to r - E mi tte r B re a k d o wn Vo lta g e B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C C o lle c to r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C B C 8 4 6 A /B B C 8 4 7 A /B /C ,B C 8 5 0 B /C B C 8 4 8 A /B /C ,B C 8 4 9 B /C S ym b o l Te s t C o n d i t i o n M IN . 65 45 30 80 50 30 6 .0 6 .0 5 .0 T YP. MA X . U ni t s V (B R) C E O IC=1.0m A , IB = 0 - - V V (B R) C B O IC = 1 0 u A , IE = 0 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = 1 0 u A , IC = 0 - - V E m i t t e r - B a s e C ut o f f C ur r e nt C o l l e c t o r - B a s e C ut o f f C ur r e nt D C C ur r e nt G a i n B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C " B C 8 4 6 ~ B C 8 4 8 S uf f i x " A " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C " IE B O IC B O V E B =5 V C B = 3 0 V , IE = 0 V C B = 3 0 V , IE = 0 , T J = 1 5 0 O C IC = 1 0 u A , V C E = 5 V 90 150 270 180 290 520 0 .7 0 .9 0 .6 6 0 - 100 15 5 .0 - nA nA uA - hF E - D C C ur r e nt G a i n hF E IC = 2 . 0 m A , V C E = 5 V IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V V C B = 1 0 V , IE = 0 , f = 1 M H 11 0 200 420 0 .5 8 - 220 450 800 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5 - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E mi tte r Vo lta g e C o l l e c t o r - B a s e C a p a c i t a nc e V C E( S AT) V B E (S AT) V B E (S AT) C CBO V V V pF NPN REV.0.3-FEB.10.2009 PAGE . 2 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A,BC848A) 100 VCB=30V 300 TJ =150˚ C ICB0, Collector Current (nA) 250 TJ=100˚ C 10 hF E 200 150 TJ=25 C 1 100 50 VCE=5V 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 Fig. 2. Typical hFE vs. Collector Current 1000 1000 TJ = 25 ˚C 800 VCE(sat) (mV) , VBE(ON) (mV) , TJ = 100 ˚C TJ = 100 ˚C TJ = 150 ˚C 600 100 400 VCE=5V 200 TJ = 150 ˚C TJ = 25 ˚C IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 TJ = 25 ˚C 1000 TJ = 25 ˚C Cib (EB) 800 VBE(sat) (mV) , TJ = 100 ˚C 600 Capacitance, C (pF ) 400 IC/IB=20 Cob (CB) 200 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage REV.0.3-FEB.10.2009 PAGE . 3 B C846,BC847,BC848,BC849,BC850 SERIES ELECTRICA5L CHARACTERISTICS CURVE (BC846B,BC847B,BC848B,BC849B,BC850B) 100 VCB=30V 500 450 400 TJ =150˚ C VCE=5V ICB0, Collector Current (nA) 10 hF E 350 300 250 200 TJ=100˚ C TJ =25 ˚C 1 150 100 50 0 25 50 75 100 O 125 150 0 0.01 0.1 1 10 100 1000 Junction Temperature, TJ ( C) Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat) (mV) , 100 TJ = 100 ˚C TJ = 150 ˚C 800 VBE(ON) (mV) , 600 400 VCE=5V TJ = 25 ˚C IC/IB=20 200 TJ = 150 ˚C 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 TJ = 25 ˚C 800 TJ = 100 ˚C Cib (EB) TJ = 25 ˚C 600 Capacitance, C (pF ) VBE(sat) (mV) , Cob (CB) 400 200 TJ = 150 ˚C IC/IB=20 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage REV.0.3-FEB.10.2009 PAGE . 4 B C846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C) 100 VCB=30V 1200 VCE=5V ICB0, Collector Current (nA) 1000 TJ =150˚ C 10 hF E 800 TJ =100˚ C 600 TJ =25 C 1 400 200 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC, (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 800 TJ = 100 ˚C TJ = 25 ˚C VCE(sat) (mV) , TJ = 100 ˚C 100 TJ = 150 ˚C VBE(ON) (mV) , 600 400 TJ = 25 ˚C 200 TJ = 150 ˚C VCE=5V IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 Cib (EB) 800 TJ = 25 ˚C VBE(sat) (mV) , TJ = 100 ˚C 600 400 IC/IB=20 TJ = 150 ˚C 0 0.01 Capacitance, C (pF ) TJ = 25 ˚C Cob (CB) 200 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage REV.0.3-FEB.10.2009 PAGE . 5 BC846,BC847,BC848,BC849,BC850 SERIES MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.3-FEB.10.2009 PAGE . 6
BC848
### 物料型号 - BC846, BC847, BC848, BC849, BC850系列

### 器件简介 - NPN通用晶体管,电压等级分别为30V、45V和65V,功率225毫瓦,采用SOT-23封装。

### 引脚分配 - 根据机械数据部分,SOT-23封装的引脚如下: - A:6脚 - B:7脚 - C:8脚

### 参数特性 - 一般用途放大应用 - NPN外延硅,平面设计 - 集电极电流IC = 100mA - 符合欧盟RoHS 2002/95/EC指令

### 功能详解 - 这些晶体管主要用于一般用途的放大应用,采用NPN外延硅材料和平面设计,具有100mA的集电极电流。

### 应用信息 - 这些晶体管适用于一般用途的放大应用,具体应用场景未在文档中详细说明,但通常这类晶体管可用于音频放大、信号放大等电子电路中。

### 封装信息 - 封装类型:SOT-23塑料封装 - 引脚可焊性:符合MIL-STD-750, Method 2026 - 近似重量:0.008克
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