BC848BW

DATA SHEET BC846W,BC847W,BC848W,BC849W,BC850W SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1.15) .004(.10)MIN. .087(2.2) .078(2.0) 30/45/65 Volts CURRENT 150 mWatts SOT-323 Unit: inch (mm) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram D evi e M ar i g: c kn B C 846AW =46A B C 846B W =46B B C 847AW =47A B C 847B W =47B B C 847C W =47C B C 848AW =48A B C 848B W =48B B C 848C W =48C B C 849B W =49B B C 849C W =49C B C 850B W =50B B C 850C W =50C .056(1.40) .047(1.20) .006(.15) .002(.05) .004(.10)MAX. .016(.40) .078(.20) ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 B C 846 BC847,BC850 BC848,BC849 Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Units V Collector - Base Voltage VCBO .044(1.1) .035(0.9) V Emitter - Base Voltage VEBO V Collector Current - Continuous IC mA THERMAL CHARACTERISTICS PA R A M E TE R M ax P ow erD i si aton ( ot 1) spi Ne Ther alR esi t nce ,Juncton t A m bi nt m sa io e Juncton Tem per t r i aue S t r ge Tem per t r oa aue S ym bol P TO T R θJA TJ STG TI Val e u 150 833 - 5 t 150 5o - 5 t 150 5o U nis t mW O C/ W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.06.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS PA RA M E TE R B C 8 4 6 A W, B W C o l l e c t o r - E m i t t e r B r e a k d o w n V o l t a g e B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W C o lle c to r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 A W, B W B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W B C 8 4 6 A W, B W B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W S ym b o l Te s t C o n d i t i o n M IN . 65 45 30 80 50 30 6 .0 6 .0 5 .0 - T YP. MA X . U ni t s V (BR) C E O IC = 1 0 m A , IB = 0 - - V V (BR) C B O IC = 1 0 u A , IE = 0 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (BR) E B O IE = 1 0 u A , IC = 0 - - V E m i t t e r - B a s e C ut o f f C ur r e nt C o l l e c t o r - B a s e C ut o f f C ur r e nt D C C ur r e nt G a i n B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W " B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW " B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W " B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W " IEBO IC BO V E B =5 V C B = 3 0 V , IE = 0 V C B = 3 0 V , IE = 0 , T J = 1 5 0 O C IC = 1 0 u A , V C E = 5 V 90 150 270 180 290 520 0 .7 0 .9 0 .6 6 0 - 100 15 5 .0 - nA nA uA - hF E - D C C ur r e nt G a i n hF E IC = 2 . 0 m A , V C E = 5 V IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 1 0 m A , IB = 0 . 5 m A IC = 1 0 0 m A , IB = 5 . 0 m A IC = 2 m A , V C E = 5 . 0 V IC = 1 0 m A , V C E = 5 . 0 V V C B = 1 0 V , IE = 0 , f = 1 M H 11 0 200 420 0 .5 8 - 220 450 800 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5 - C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e B a s e - E mi tte r Vo lta g e C o l l e c t o r - B a s e C a p a c i t a nc e V C E(SAT) V C E(SAT) V C E(SAT) C C BO V V V pF STAD-JUL.06.2004 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW) 100 VCB=30V 300 TJ =150˚ C ICB0, Collector Current (nA) 250 TJ=100˚ C 10 hF E 200 150 TJ=25 C 1 100 50 VCE=5V 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 Fig. 2. Typical hFE vs. Collector Current 1000 1000 TJ = 25 ˚C 800 VCE(sat) (mV) , VBE(ON) (mV) , TJ = 100 ˚C TJ = 100 ˚C TJ = 150 ˚C 600 100 400 VCE=5V 200 TJ = 150 ˚C TJ = 25 ˚C IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 TJ = 25 ˚C 1000 TJ = 25 ˚C Cib (EB) 800 VBE(sat) (mV) , TJ = 100 ˚C 600 Capacitance, C (pF ) 400 IC/IB=20 Cob (CB) 200 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage STAD-JUL.06.2004 PAGE . 3 ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW) 100 VCB=30V 500 450 400 TJ =150˚ C VCE=5V ICB0, Collector Current (nA) 10 hF E 350 300 250 200 TJ=100˚ C TJ =25 ˚C 1 150 100 50 0 25 50 75 100 O 125 150 0 0.01 0.1 1 10 100 1000 Junction Temperature, TJ ( C) Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat) (mV) , 100 TJ = 100 ˚C TJ = 150 ˚C 800 VBE(ON) (mV) , 600 400 VCE=5V TJ = 25 ˚C IC/IB=20 200 TJ = 150 ˚C 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 TJ = 25 ˚C 800 TJ = 100 ˚C Cib (EB) TJ = 25 ˚C 600 Capacitance, C (pF ) VBE(sat) (mV) , Cob (CB) 400 200 TJ = 150 ˚C IC/IB=20 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage STAD-JUL.06.2004 PAGE . 4 ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW) 100 VCB=30V 1200 VCE=5V ICB0, Collector Current (nA) 1000 TJ =150˚ C 10 hF E 800 TJ =100˚ C 600 TJ =25 C 1 400 200 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC, (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 800 TJ = 100 ˚C TJ = 25 ˚C VCE(sat) (mV) , TJ = 150 ˚C VBE(ON) (mV) , TJ = 100 ˚C 100 600 400 TJ = 25 ˚C 200 TJ = 150 ˚C VCE=5V IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 Cib (EB) 800 TJ = 25 ˚C VBE(sat) (mV) , TJ = 100 ˚C 600 400 IC/IB=20 TJ = 150 ˚C 0 0.01 Capacitance, C (pF ) TJ = 25 ˚C Cob (CB) 200 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage STAD-JUL.06.2004 PAGE . 5 MOUNTING PAD LAYOUT SOT-323 Unit: inch (mm) 0.035(0.9) 0.025(0.65) 0.028(0.7) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-JUL.06.2004 0.075(1.9) PAGE . 6