BC849W

BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives 0.087(2.20) 0.070(1.80) 0.004(0.10)MIN. 0.044(1.10) 0.035(0.90) 0.087(2.20) 0.078(2.00) 30/45/65 Volts CURRENT 150 mWatts MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0001 ounce, 0.005 gram 0.054(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 0.006(0.15) 0.002(0.05) 0.004(0.10)MAX. 0.016(0.40) 0.008(0.20) Device Marking: BC846AW=46A BC846BW=46B BC847AW=47A BC847BW=47B BC848AW=48A BC848BW=48B BC849BW=49B BC850BW=50B BC847CW=47C BC848CW=48C BC849CW=49C BC850CW=50C ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage BC846W BC847W, BC850W BC848W, BC849W BC846W BC847W, BC850W BC848W, BC849W BC846W BC847W, BC850W BC848W, BC849W Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Units V Collector - Base Voltage VCBO V Emitter - Base Voltage VEBO V Collector Current - Continuous IC mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance Junction Temperature Storage Temperature Symbol PTOT RθJA RθJC TJ TSTG Value 150 400 100 -55 to 150 -55 to 150 Units mW O C/W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. December 17,2010-REV.00 PAGE . 1 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS PA RA ME TE R B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W S ym bo l Te st C o nd i ti o n MIN. 65 45 30 80 50 30 6.0 6.0 5.0 TYP. MA X . Uni ts C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC =1 0 mA , IB =0 - - V C o lle c to r - B as e B re a k d o wn Vo lta g e V (B R) C B O IC =1 0 μ A , IE =0 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V ( B R) E B O IE =1 0 μ A , IC =0 - - V E mi tte r-B a s e C uto ff C urre nt C o lle c to r-B a s e C uto ff C urre nt D C C urre nt Ga i n B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W" B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W" IE B O IC B O V E B =5 V C B =3 0V, IE =0 V C B =3 0V, IE =0 ,T J =1 5 0 O C IC =1 0 μ A , V C E =5 V 90 150 270 180 290 520 0 .7 0 .9 0 .6 6 0 - 100 15 5 .0 - nA nA μA - hFE - D C C urre nt Ga i n hFE IC =2 .0 mA , V C E =5 V IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =2 mA , V C E =5 .0 V IC =1 0 mA , V C E =5 .0 V V C B =1 0V, IE =0 , f=1 MH 11 0 200 420 0 .5 8 - 220 450 800 0 .2 5 0 .6 0 .7 0 0 .7 7 4 .5 - C o lle c to r - E mi tte r S a tura ti o n Vo lta g e B a se - E mi tte r S a tura ti o n Vo lta g e B a se - E mi tte r Vo lta g e C o lle c to r - B as e C a p a ci ta nce V C E (S AT) V C E (S AT) V C E (S AT) C CBO V V V pF December 17,2010-REV.00 PAGE . 2 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW) 100 VCB=30V 300 TJ =150˚ C 250 TJ=100˚ C ICB0, Collector Current (nA) 10 hF E 200 150 TJ=25 C 1 100 50 VCE=5V 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 Fig. 2. Typical hFE vs. Collector Current 1000 1000 TJ = 25 ˚C 800 VCE(sat) (mV) , VBE(ON) (mV) , TJ = 100 ˚C TJ = 100 ˚C TJ = 150 ˚C 600 100 400 VCE=5V 200 TJ = 150 ˚C TJ = 25 ˚C IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 TJ = 25 ˚C 1000 TJ = 25 ˚C 800 Cib (EB) VBE(sat) (mV) , TJ = 100 ˚C 600 Capacitance, C (pF ) 400 IC/IB=20 Cob (CB) 200 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current December 17,2010-REV.00 Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 3 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW) 100 VCB=30V 500 450 400 TJ =150˚ C VCE=5V ICB0, Collector Current (nA) 10 hF E 350 300 250 200 TJ=100˚ C TJ =25 ˚C 1 150 100 50 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat) (mV) , 100 TJ = 100 ˚C TJ = 150 ˚C 800 VBE(ON) (mV) , 600 400 VCE=5V TJ = 25 ˚C IC/IB=20 200 TJ = 150 ˚C 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 TJ = 25 ˚C 800 TJ = 100 ˚C Cib (EB) TJ = 25 ˚C 600 Capacitance, C (pF ) VBE(sat) (mV) , Cob (CB) 400 200 TJ = 150 ˚C IC/IB=20 0 0.01 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current December 17,2010-REV.00 Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 4 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW) 100 VCB=30V 1200 VCE=5V ICB0, Collector Current (nA) 1000 TJ =150˚ C 10 hF E 800 TJ =100˚ C 600 TJ =25 C 1 400 200 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) 0 0.01 0.1 1 10 100 1000 Collector Current, IC, (mA) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 Fig. 2. Typical hFE vs. Collector Current 1000 800 TJ = 100 ˚C TJ = 25 ˚C VCE(sat) (mV) , TJ = 150 ˚C VBE(ON) (mV) , TJ = 100 ˚C 100 600 400 TJ = 25 ˚C 200 TJ = 150 ˚C VCE=5V IC/IB=20 0 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1000 Cib (EB) 800 TJ = 25 ˚C VBE(sat) (mV) , TJ = 100 ˚C 600 400 IC/IB=20 TJ = 150 ˚C 0 0.01 Capacitance, C (pF ) TJ = 25 ˚C Cob (CB) 200 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current December 17,2010-REV.00 Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 5 BC846AW ~ BC850CW MOUNTING PAD LAYOUT SOT-323 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 17,2010-REV.00 PAGE . 6