BC856_09

BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : B C 856A =56A B C 856B =56B B C 857A =57A B C 857B =57B B C 857C =57C B C 858A =58A B C 858B =58B B C 858C =58C B C 859B =59B B C 859C =59C Top View 3 Collector 3 COLLECTOR 1 BASE 1 Base 2 Emitter 2 EMITTER ABSOLUTE MAXIMUM RATINGS PA RA M E TE R C o lle c to r-E mi tte r Vo lta g e C o lle c to r-B a s e Vo lta g e E mi tte r-B a s e Vo lta g e C o l l e c t o r C ur r e nt - C o nt i nuo us Ma x P o we r D i s s i p a ti o n (No te 1 ) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e S YM B O L V CEO V CBO V EBO IC P TOT T J , T S TG BC856 -65 -80 BC857 -45 -50 -5 -100 225 BC858 BC859 -30 -30 U N IT S V V V mA mW - 5 0 TO + 1 5 0 O C REV.0.1-FEB.9.2009 PAGE . 1 BC856 SERIES THERMAL CHARACTERISTICS PARAMETER Thermal Resistance , Junction to Ambient SYMBOL RΘJA Value 556 UNIT O C /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout. EL ECTRICAL CHARACTERISTICS (TJ =25 C, unless otherwise noted) PARAMETER Collector - Emitter Breakdown Voltage (I C =-10mA, IB =0) BC856A,B BC857A,B,C V(BR)CEO BC858A,B,C, BC859B,C Collector - Base Breakdown Voltage (I C =-10 µA, IE=0) BC856A,B BC857A,B,C V(BR)CBO BC858A,B,C, BC859B,C Emitter - Base Breakdown Voltage (I E=-1 µA, IC =0) V(BR)EBO I EBO SYMBOL MIN. -65 -45 -30 -80 -50 -30 - 5.0 T J=150 OC DC Current Gain (I C =-10 µA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C h FE (I C =-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector – Emitter Saturation Voltage (IC =-10mA, I B =-0.5mA) VCE(SAT) (I C =-100mA, I B =-5.0mA) Base – Emitter Saturation Voltage (IC =-10mA, IB =-0.5mA) VBE(SAT) (I C =-100mA, I B =-5.0mA) Base – Emitter On Voltage (IC =-2.0mA, VCE=-5.0V) VBE(ON) (I C =-10mA, VCE=-5.0V) Collector - Base Capacitance Current-Gain - Bandwidth Product FT (I C =-10mA, VCE=-5.0V, f=100MHz) REV.0.1-FEB.9.2009 PAGE . 2 TYP. 90 150 270 MAX. -100 -15 -4.0 - UNIT V V V nA nA uA Emitter-Base Cutoff Current (VEB =-5V) Collector-Base Cutoff Current (VCB =-30V, IE=0) I CBO - 110 200 420 -0.60 180 290 520 -0.7 -0.9 220 450 800 -0.3 V -0.65 V -0.75 V -0.82 4.5 pF (VCB =-10V, IE=0, f=1MHz) CCB - - 200 - MHz BC856 SERIES ELECTRICAL CHARACTERISTICS CURVES 600 T J=150 C O 0.9 0.8 0.7 T J=25 C O 500 400 hFE V BE(ON)(V) T J=100 C O 0.6 0.5 0.4 0.3 T J=15 C O 300 T J=25 OC T J=100 OC 200 100 0 0.01 V CE=-5V 0.2 0.1 VCE = -5V 0.1 1 10 100 0 0.01 0.1 1 10 100 Collector Current,I C(mA) Collector Current, I C(mA) Fig.1- TYPICAL h FE vs. Collector Current Fig.2- TYPICAL V BE(ON) vs. Collector Current 0.3 0.25 Capacitance,C(pF) 14 12 CIB (EB) 10 8 6 4 2 COB (BC) V CE(SAT)(V) 0.2 0.15 T J=150 C O T J=100 OC 0.1 0.05 0 0.01 T J=25 OC 0.1 1 10 100 0 0.1 1 10 100 Collector Current,I C(mA) Reverse Voltage,V R(V) Fig.3- TYPICAL V CE(SAT) vs. Collector Current Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE REV.0.1-FEB.9.2009 PAGE . 3 BC856 SERIES MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.9.2009 PAGE . 4