BC859W

BC859W

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BC859W - PNP GENERAL PURPOSE TRANSISTORS - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BC859W 数据手册
BC856AW ~ BC859CW PNP GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES 0.087(2.20) 0.078(2.00) 30/45/65 Volts CURRENT 200 mWatts • PNP epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series • In compliance with EU RoHS 2002/95/EC directives 0.087(2.20) 0.070(1.80) 0.054(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 0.006(0.15) 0.002(0.05) MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0001 ounce, 0.005 gram 0.016(0.40) 0.008(0.20) 0.004(0.10)MAX. 0.044(1.10) 0.035(0.90) Device Marking: BC856AW=56A BC856BW=56B BC857AW=57A BC857BW=57B BC857CW=57C BC858AW=58A BC858BW=58B BC858CW=58C BC859BW=59B BC859CW=59C ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage BC856W BC857W BC858W, BC859W BC856W BC857W BC858W, BC859W BC856W BC857W BC858W, BC859W Symbol VCEO Value -65 -45 -30 -80 -50 -30 6.0 6.0 -5.0 -100 200 -55 to 150 -55 to 150 Units V 0.004(0.10)MIN. • General purpose amplifier applications Collector - Base Voltage VCBO V Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Storage Temperature Range Junction Temperature Range VEBO IC PTOT TSTG TJ V mA mW O C C O December 17,2010-REV.00 PAGE . 1 BC856AW ~ BC859CW THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT Thermal Resistance RθJA RθJC 400 100 OC/W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA M E TE R C o lle c to r - E m i tte r B re a k d o wn Vo lta g e ( I C = - 1 0 mA , I B = 0 ) C o lle c to r - B a s e B re a k d o wn Vo lta g e ( IC = - 1 0 μ A , IE = 0 ) E mi tte r -B a s e B re a k d o w n Vo lta g e ( I E = - 1 uA , I C = 0 ) E mi tte r -B a s e C uto ff C ur re nt ( V E B = -5 V ) C o lle c to r- B a s e C uto ff C ur re nt ( V C B = -3 0 V, I E = 0 ) D C C urr e nt Ga i n ( IC = - 1 0 μ A , V C E = - 5 V ) D C C urr e nt Ga i n ( I C = - 2 .0 m A , V C E = - 5 V ) T J = 2 5 OC T J = 1 5 0 OC B C 8 5 6 ~ B C 8 5 8 S uffi x " AW " B C 8 5 6 ~ B C 8 5 9 S uffi x " B W " B C 8 5 7 ~ B C 8 5 9 S uffi x " C W " B C 8 5 6 ~ B C 8 5 8 S uffi x " AW " B C 8 5 6 ~ B C 8 5 9 S uffi x " B W " B C 8 5 7 ~ B C 8 5 9 S uffi x " C W " ( IC = -1 0 m A , IB = - 0 .5 m A ) ( IC = -1 0 0 m A , IB = - 5 .0 m A ) ( IC = -1 0 m A , IB = - 0 .5 m A ) ( IC = -1 0 0 m A , IB = - 5 .0 m A ) ( IC = -2 m A , V C E = -5 .0 V ) ( IC = -1 0 m A , V C E = -5 .0 V ) ( V C B = -1 0 V, IE = 0 , f= 1 M H Z ) B C 8 5 6 AW,B W B C 8 5 7 AW /B W /C W, B C 8 5 8 AW /B W /C W,B C 8 5 9 B W /C W B C 8 5 6 AW,B W B C 8 5 7 AW /B W /C W, B C 8 5 8 AW /B W /C W,B C 8 5 9 B W /C W S ym b o l MIN. -65 -45 -30 -80 -50 -30 - 5 .0 TYP. MAX. Uni ts V ( B R) C E O - - V V ( B R) C B O - - V V ( B R) E B O - - V IE B O IC B O - - -1 0 0 -1 5 - 4 .0 nA nA μA - 90 150 270 180 290 520 - 0 .7 - 0 .9 200 hF E - - - hF E 11 0 200 420 - 0 .6 0 - 220 450 800 - 0 .3 - 0 .6 5 - 0 .7 5 - 0 .8 2 4 .5 - - C o lle c to r - E m i tte r S a tura ti o n Vo lta g e B a s e - E m i tte r S a tura ti o n Vo lta g e B a s e - E m i tte r Vo lta g e C o lle c to r - B a s e C a p a c i ta nc e C urre nt- Ga i n- B a nd wi d th P r o d uc t ( I C = - 1 0 mA , V C E = -5 .0 V,f= 1 0 0 MH Z ) V C E (S AT) V B E (S AT) V B E ( ON) C CB F. V V V pF M HZ December 17,2010-REV.00 PAGE . 2 BC856AW ~ BC859CW ELECTRICAL CHARACTERISTICS CURVE 600.0 500.0 400.0 hFE 300.0 200.0 100.0 VCE=-5V 0.0 0.01 0.1 1 10 100 TJ = 150˚C BC857B 0.900 0.800 0.700 VBE(on) (V) , TJ = 25˚C TJ = 100˚C TJ = 25˚C 0.600 0.500 0.400 0.300 0.200 0.100 0.000 0.01 TJ = 100˚C TJ = 150˚C VCE=-5V 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 1. Typical hFE vs. Collector Current Fig. 2. Typical VBE(ON) vs. Collector Current 0.30 14.00 f = 100MHz 12.00 Capacitance, C (pF 0.25 10.00 8.00 6.00 4.00 2.00 0.00 COB (BC) CIB (EB) 0.20 VCE(SAT) (V) , TJ = 100˚C 0.15 TJ = 150˚C TJ = 25˚C 0.05 0.10 0.00 0.01 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage, VR (V) Fig. 3. Typical VCE(SAT) vs. Collector Current Fig. 5. Typical Capacitances vs. Reverse Voltage December 17,2010-REV.00 PAGE . 3 BC856AW ~ BC859CW MOUNTING PAD LAYOUT SOT-323 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 17,2010-REV.00 PAGE . 4
BC859W
### 物料型号 - BC856AW至BC859CW是一系列PNP通用晶体管,电压等级分别为30伏、45伏和65伏。

### 器件简介 - 这些晶体管是PNP型外延平面结构,适用于通用放大应用,并且符合欧盟RoHS 2002/95/EC指令。

### 引脚分配 - 晶体管采用SOT-323塑料封装,引脚可焊性符合MIL-STD-750标准方法2026。

### 参数特性 - 绝对最大额定值包括集电极-发射极电压、发射极-基极电压、集电极电流、最大功耗、存储温度范围和结温范围。 - 电气特性包括击穿电压、截止电流、直流电流增益、饱和电压和基极-发射极电压等。

### 功能详解 - 这些晶体管主要用于通用放大器应用,具有PNP外延硅、平面设计,集电极电流为100mA。

### 应用信息 - 提供了晶体管的典型hFE与集电极电流关系图、典型VBE(ON)与集电极电流关系图、典型VCE(SAT)与集电极电流关系图以及典型电容与反向电压关系图。

### 封装信息 - 提供了安装垫布局图,包括12K每13英寸塑料卷和3K每7英寸塑料卷的包装信息。
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