BSS84DW

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. 4 SOT- 363 FEATURES Low On-Resistance Low Gate Threshold Voltage Fast Switching Available in lead-free plating (100% matte tin finish) 6 5 3 2 1 6 5 4 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs 1 2 3 MARKING CODE: S84 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current Total Power Dissipation (Note 2) Operating Junction Temperature Range Storage Temperature Range Note 1. RGS < 20K ohms TJ = 25°C Unless otherwise noted Symbol VDSS V DGR VGSS ID PD TJ Tstg Value - 50 - 50 ± 20 130 200 -55 to +150 -55 to +150 Units V V V mA mW °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 2) Symbol R thja Value 625 Units °C/W Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 8/12/2005 Page 1 www.panjit.com BSS84DW Electrical Characteristics (Each Device) OFF CHARACTERISTICS (Note 3) Parameter Symbol Conditions Min -50 Typ Max -15 -60 -0.1 ±10 nA µA Units V Drain-Source Breakdown Voltage BVDSS I D = -250µA, VGS = 0V VDS= -50V, VGS= 0V, T J =25°C Zero Gate Voltage Drain Current Gate-Body Leakage I DSS I GSS V DS= -50V, VGS= 0V, T J =125°C V DS= -25V, V GS= 0V, T J =25°C V GS= ±20V, V DS= 0V TJ = 25°C Unless otherwise noted ON CHARACTERISTICS (Note 3) Parameter Gate Threshold Voltage Symbol Conditions Min -0.8 0.05 Typ -1.44 3.8 Max -2.0 10 Units V Ohms S V GS(th) VDS= V GS I D= -1mA , Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol C iss Coss Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz Min Typ Max 45 25 12 Units pF pF pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Turn-Off Delay Time Symbol t D(ON) t D(OFF) Conditions VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V Min Typ 7.5 25 Max Units ns ns Note 3. Short duration test pulse used to minimize self-heating 8/12/2005 Page 2 www.panjit.com BSS84DW Electrical Characteristic Curves (Each Device) 1 -ID - Drain-to-Source Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 -ID - Drain Source Current (A) 1 TJ = 25°C Unless otherwise noted V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 6 7 0.9 V GS= 6V, 7V, 8V, 9V, 10V 5.0V 4.0V 3.0V -VDS - Drain-to-Source Voltage (V) -V GS - Gate-to-Source Voltage (V) Fig. 1. Output Characteristics 10 Fig. 2. Transfer Characteristics 10 RDS(ON) - O n-Resistance (Ohms) 8 6 Ids=-500mA 4 2 Ids=-50mA 0 RDS(ON) - O n-Resistance (Ohms) 8 V GS = 4.5V 6 4 V GS =10.0V 2 0 0 0.2 0.4 0.6 0.8 1 2 4 6 8 10 -ID - Drain Curre nt (A) -V GS - Gate-to-Source Voltage (V) Fig. 3. On-Resistance vs. Drain Current V GS Threshold Voltage (NORMALIZED 1.2 Fig. 4. On-Resistance vs. G-S Voltage 10 -IS - Source Current (A) ID =250µA 1.1 VGS = 0V 1 1 25oC 0.1 0.9 0.8 -50 -25 0 25 50 75 100 o 125 150 0.01 0.4 0.6 0.8 1 1.2 1.4 TJ - Junction Temperature ( C) -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 8/12/2005 Page 3 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS84DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BSS84DW T/R7 - 7 inch reel, 3K units per reel BSS84DW T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/12/2005 Page 4 www.panjit.com