BZD27C75P

BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals • In compliance with EU RoHS 2002/95/EC directives 3.6 to 75 Volts POWER 800 mW MECHANICAL DATA Case: SOD-123FL Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0168 grams ABSOLUTE MAXIMUM RATINGS (TA=25OC , unless otherwise specified) Parameter Power dissipation Test conditon TL =80 C TA =25 OC 100 µs square pulse(note 2) Non-repetitive peak pulse power dissipation 10/1000 µs waveform (BZD27-C7V5P to BZD27-C75P) O Symbol PTOT PTOT PZSM PRSM Value 2.3 0.8 (note 1) 300 Units W W 150 THERMAL CHARACTERISTICS (TA=25OC , unless otherwise noted) P a ra me te r The r m a l r e s i s t a nc e j unc t i o n t o a m b i e nt a i r The r m a l r e s i s t a nc e j unc t i o n t o l e a d M a xi m um j unc t i o n t e m p e r a t ur e S t o r a g e t e m p e r a t ur e r a ng e Te s t c o n d i t i o n S ym b o l R θJ A R θJ L ΤJ Ts Va l ue 180 30 150 -5 5 to + 1 5 0 U ni t K /W K /W O C C O ELCTRICAL CHARACTERISTICS PA RA M E TE R F o r w a r d vo l t a g e Te s t c o n d i t i o n IF = 0 . 2 A S ym b o l VF Mi n Ty p Max 1.2 U ni t s V NOTES: 1. Mounted on epoxy-glass PCB with 3X3 mm Cu pads ( >40 µ m thick) 2. T J =25 O C prior to surge STAD-JAN.12.2007 PAGE . 1 BZD27C3V6P~BZD27C75P Nomi nal Zener Voltage Part Number Nom. V BZD 27C 3V6P BZD 27C 3V9P BZD 27C 4V3P BZD 27C 4V7P BZD 27C 5V1P BZD 27C 5V6P BZD 27C 6V0P BZD 27C 6V2P BZD 27C 6V8P BZD 27C 7V5P BZD 27C 8V2P BZD 27C 8V7P BZD 27C 9V1P BZD 27C 10P BZD 27C 11P BZD 27C 12P BZD 27C 13P BZD 27C 14P BZD 27C 15P BZD 27C 16P BZD 27C 17P BZD 27C 18P BZD 27C 19P BZD 27C 20P BZD 27C 22P BZD 27C 24P BZD 27C 25P BZD 27C 27P BZD 27C 28P BZD 27C 30P BZD 27C 33P BZD 27C 36P BZD 27C 39P BZD 27C 43P BZD 27C 47P BZD 27C 51P BZD 27C 56P BZD 27C 62P BZD 27C 68P BZD 27C 75P 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 62 68 75 VZ@IZT Mi n. V 3.42 3.71 4.09 4.47 4.85 5.32 5.70 5.89 6.46 7.13 7.79 8.27 8.65 9.50 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.2 58.9 64.6 71.25 Max. V 3.78 4.10 4.52 4.94 5.36 5.88 6.30 6.51 7.14 7.88 8.61 9.14 9.56 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.0 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.8 65.1 71.4 78.75 Ω 8 8 7 7 6 4 3 3 3 2 2 3 4 4 7 7 10 10 10 15 15 15 15 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 Max. Zener Impedance ZZT@IZT mA 100 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 50 50 25 25 25 25 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 Ω 400 400 400 500 550 600 600 700 700 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 750 750 1000 1000 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 ZZK@IZK mA 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 µA 100 50 25 10 5 10 8 5 10 50 10 10 10 7 4 3 2 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Max Reverse Leakage C urrent IR@VR V 1 1 1 1 1 2 2 2 3 3 3 4 5 7.5 8.2 9.1 10 11 11 12 13 13 14 15 16 18 19 20 21 22 24 27 30 33 36 39 43 47 51 56 3V 6 3V 9 4V 3 4V 7 5V 1 5V 6 6V 1 6V 2 6V 8 7V 5 8V 2 8V 7 9V 1 10P 11P 12P 13P 14P 15P 16P 17P 18P 19P 20P 22P 24P 25P 27P 28P 30P 33P 36P 39P 43P 47P 51P 56P 62P 68P 75P Marki ng C ode STAD-JAN.12.2007 PAGE . 2 BZD27C3V6P~BZD27C75P Typical Characteristics (T A =25 C unless otherwise specified) 10.00 O Max. Pulse Power Dissipation ( W ) RSM 160 140 120 100 80 60 40 20 0 IF - Forward Current (A) Typ. V F Max. V F 1.00 V F - Forward Current vs. Forward Voltage P 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 25 50 75 V znom - Z e n e r Vo l t a g e ( V ) Figure1. Forward Current vs. Forward Voltage Figure4. Maximum Pulse Power Dissipation vs. Zener Voltage C D - Typ. Junction Capacitance ( pF ) 10000 C5V1P 1000 C6V8P C12P C18P IRSM (%) 100 90 t1 = 10 m s t2 = 1000 m s 100 C27P C51P 50 10 10 0.0 0.5 1.0 1.5 2.0 2.5 V R - Reverse Voltage (V) 3.0 t1 t t2 Figure2. Typ. Diode Capacitance vs. Reverse Voltage Figure5. Non-Repetitive Peak Reverse Current Pulse Definition 3.0 ower D is s ipat ion ( W ) 2.5 2.0 1.5 1.0 0.5 0.0 0 tie point temperature ambient temperature P tot 25 50 75 100 125 O 150 TA - Ambient Temperature ( C) Figure3. Power Dissipation vs. Ambient Temperature STAD-JAN.12.2007 q PAGE . 3 BZD27C3V6P~BZD27C75P MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2008 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JAN.12.2007 PAGE . 4