BZX55-C11

DATA SHEET BZX55-C SERIES AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 47 Volts POWER 500 mWatts DO-35 Unit: inch (mm) FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .153(3.9)MAX. 1.02(26.0)MIN. .020(0.52)TYP. MECHANICAL DATA • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix :” -35” to order DO-35 Package • Packing information B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box 1.02(26.0)MIN. • Case: Molded glass DO-35 .079(2.0)MAX. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) Parameter Power Dissipation at Tamb = 25 Junction Temperature Storage Temperature Range Valid provided that leads at a distance of 8mm from case are kept at ambient temperature. O Symbol Value 500 175 -65 to +175 Units mW O C PTOT TJ TS C C O Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100mA Symbol Min. --- Typ. Max. 0.3 1 Units K/mW V RthA VF --- Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. STAD-SEP.14.2004 PAGE . 1 Nominal Zener Voltage Part Number No m. V BZX55-C2V4 BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 BZX55-C10 BZX55-C11 BZX55-C12 BZX55-C13 BZX55-C15 BZX55-C16 BZX55-C18 BZX55-C20 BZX55-C22 BZX55-C24 BZX55-C27 BZX55-C30 BZX55-C33 BZX55-C36 BZX55-C39 BZX55-C43 BZX55-C47 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 Max. Zener Impedance Z ZT @ IZT Z ZK @ IZK Ω 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 220 220 220 220 220 220 500 600 700 mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max Reverse Leakage Current IR @ V R uA 50 10 4.0 2.0 2.0 2.0 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.0 7.0 7.5 8.5 9.0 10.0 11.0 12.0 14.0 15.0 17.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 V Z @ IZT M i n. V 2.28 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.40 11.40 12.40 13.80 15.30 16.80 18.80 20.80 22.80 25.10 28.00 31.00 34.00 37.00 40.00 44.00 M a x. V 2.56 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.60 11.60 12.70 14.10 15.60 17.10 19.10 21.20 23.30 25.60 28.90 32.00 35.00 38.00 41.00 46.00 50.00 marking co d e 55C 2V 4 55C 2V 7 55C 3V 0 55C 3V 3 55C 3V 6 55C 3V 9 55C 4V 3 55C 4V 7 55C 5V 1 55C 5V 6 55C 6V 2 55C 6V 8 55C 7V 5 55C 8V 2 55C 9V 1 55C 10V 55C11V 55C 12V 55C 13V 55C 15V 55C 16V 55C 18V 55C 20V 55C 22V 55C 24V 55C 27V 55C 30V 55C 33V 55C 36V 55C 39V 55C 43V 55C 47V Ω 85 85 85 85 85 85 75 60 35 25 10 8 7 7 10 15 20 20 26 30 40 50 55 55 80 80 80 80 80 90 90 110 mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.5 2.5 2.5 STAD-SEP.14.2004 PAGE . 2 Typical Characteristics (Tamb = 25 °C unless otherwise specified) RthJA –Therm.Resist.Junction/ Ambient ( K/W) 500 VZtn – Relative VoltageChange 1.3 V Ztn=V Zt/V Z(25°C) 400 1.2 1.1 1.0 0.9 0.8 –60 TK VZ =10 x 10–4/K 300 l l 8 x 10–4/K 6 x 10–4/K 4 x 10–4/K 2 x 10–4/K 0 200 100 TL=constant –2 x 10–4/K –4 x 10–4/K 0 0 5 10 15 20 l – Lead Length ( mm ) 0 60 120 180 240 95 961 1 95 9599 Tj – Junction Temperature (°C ) Fig. 1 Thermal Resistance vs. Lead Length Fig. 4 Typical Change of Working Voltage vs. Junction Temperature TK VZ –Temperature Coefficient of VZ ( 10–4 /K) P –Total Power Dissipation ( mW) tot 600 500 400 300 15 10 5 I Z=5mA 200 100 0 0 –5 0 10 20 30 40 0 40 80 120 160 200 50 95 9602 Tamb – Ambient T emperature(°C ) 95 9600 V Z – Z-Voltage ( V ) Fig. 2 Total Power Dissipation vs. Ambient Temperature Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage 1000 CD – Diode Capacitance ( pF ) 200 VZ –VoltageChange mV ) ( Tj =25°C 100 150 V R=2V 100 Tj =25°C I Z=5mA 10 50 1 0 95 9598 0 5 10 15 20 25 95 9601 0 5 10 15 20 25 V Z – Z-Voltage ( V ) V Z – Z-Voltage ( V ) Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Fig. 6 Diode Capacitance vs. Z-Voltage STAD-SEP.14.2004 PAGE . 3 100 I F – Forward Current ( mA) 50 40 30 20 10 0 Ptot=500mW Tamb=25°C Tj =25°C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 IZ – Z-Current ( mA) 10 15 95 9607 20 25 30 35 95 9605 V F – Forward Voltage ( V ) V Z – Z-Voltage ( V ) Fig. 7 Forward Current vs. Forward Voltage Fig. 9 Z-Current vs. Z-Voltage IZ – Z-Current ( mA) 80 60 40 20 0 0 4 8 12 r Z – Differential Z-Resistance ( Ω ) 100 1000 Ptot=500mW Tamb=25°C I Z=1mA 100 5mA 10 10mA 1 Tj =25°C 0 5 10 15 20 25 V Z – Z-Voltage ( V ) 16 20 95 9606 95 9604 V Z – Z-Voltage ( V ) Fig. 8 Z-Current vs. Z-Voltage Zthp –ThermalResistance PulseCond.(K/W) for Fig. 10 Differential Z-Resistance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W T=Tjmax–Tamb 10 tp/T=0.01 tp/T=0.1 tp/T=0.02 tp/T=0.05 1 10–1 100 101 i ZM =(–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 102 95 9603 tp – Pulse Length ( ms ) Fig. 11 Thermal Response STAD-SEP.14.2004 PAGE . 4