BZX84B28

BZX84B28

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BZX84B28 - SURFACE MOUNT SILICON ZENER DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX84B28 数据手册
1. DATA SHEET BZX84 B SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 - 39 Volts POWER 410 mWatts SOT- 23 Unit: inch (mm) FEATURES • Planar Die construction • 410mW Power Dissipation .056(1.40) .047(1.20) .119(3.00) .110(2.80) • Ideally Suited for Automated Assembly Processes • Pb free product are available : 99% Sn above can meet Rohs environment substance directive request .007(.20)MIN MECHANICAL DATA • Case: SOT-23, Molded Plastic • Terminals: Solderable per MIL-STD-202G, Method 208 • Polarity: See Diagram Below • Approx. Weight: 0.008 grams • Mounting Position: Any .083(2.10) .066(1.70) .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS P ar m et r a e M axi um For ar Volage D r p atI =10m A m wd t o F P ow erD i si aton ( ot s A )at25O C spi N e P eak For ar S ur e C urent 8. m s si gl hal wd g r ,3 ne f si e- ave superm posed on r t d l ad ( E D E C m et od) ( ot s B ) nw i ae o J h Ne O per tng Juncton and S t r geTem per t r R ange ai i oa aue S ym bol VF PD FSM I Val e u 0. 9 410 2. 0 - 5 t +150 5o .044(1.10) .035(0.90) .103(2.60) U nis t V mW A m ps O TJ SINGLE ( Note C ) NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. C. For Structure Purpose only. .086(2.20) C STAD-DEC.02.2004 PAGE . 1 Part Number Marking Code VZ @ IZT Maximum Zener Impedance ZZT @ IZT ZZK @ IZK O mA Maximum Leakage Current IR @VR uA V Package Nom. V Min. V Max. V 410 mWatt ZENER DIODES BZX84B4V3 BZX84B4V7 BZX84B5V1 BZX84B5V6 BZX84B6V2 BZX84B6V8 BZX84B7V5 BZX84B8V2 BZX84B9V1 BZX84B10 BZX84B11 BZX84B12 BZX84B13 BZX84B14 BZX84B15 BZX84B16 BZX84B17 BZX84B18 BZX84B20 BZX84B22 BZX84B24 BZX84B27 BZX84B28 BZX84B30 BZX84B33 BZX84B36 BZX84B39 4B3 4B7 5B1 5B6 6B2 6B8 7B5 8B2 9B1 10B 11B 12B 13B 14B 15B 16B 17B 18B 20B 22B 24B 27B 28B 30B 33B 36B 39B 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 14 15 16 17 18 20 22 24 27 28 30 33 36 39 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 O mA 90 80 60 40 10 15 15 15 15 20 20 25 30 30 30 40 40 45 55 55 70 80 80 80 80 90 130 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 600 500 480 400 150 80 80 80 100 150 150 150 170 170 200 200 200 225 225 250 250 300 300 300 325 350 350 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.0 10.5 11.2 12.2 12.6 14.0 15.4 16.8 18.9 20.5 21.0 23.1 25.2 27.3 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 10.78 11.22 11.76 12.24 12.74 13.26 13.72 14.28 14.70 15.30 15.68 16.32 16.66 17.34 17.64 18.36 19.60 20.40 21.56 22.44 23.52 24.48 26.46 27.54 27.44 28.56 29.40 30.60 32.34 33.66 35.28 36.72 38.22 39.8 STD-DEC.02.2004 PAGE . 2 TEMPERATURE COEFFICIENT,(mA/ OC) 8 7 6 5 4 3 2 1 TEMPERATURE COEFFICIENT,(mA/ OC) 100 10 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 12 1 10 100 NOMINAL ZENER VOLTAGE,VOLTS NOMINAL ZENER VOLTAGE,VOLTS Fig.1 TEMPERATURE COEFFICENTS Fig.2 TEMPERATURE COEFFICENTS 1000 DYNAMIC IMPEDANCE, W FORWARD CURRENT,mA 1000 TJ=25 C IZ(AC)=0.1 IZ(DC) F=1 kHZ O IZ = 1 mA 100 5 mA 20 mA 100 10 10 150 C 75OC O 25 C O 5C O 1 1 10 NORMAL ZENER VOLTAGE, VOLTS 100 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE, VOLTS Fig.3 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE Fig.4 TYPICAL FORWARD VOLTAGE 1000 0.6 POWER DISSIPATION, Watts 0 V BIAS 1 V BIAS T A =25 C O TA=25 oC 0.5 0.4 0.3 CAPACITANCE,pF 100 BIASAT 50% OF VZ NOM 10 0.2 0.1 1 0 0 25 50 75 O 1 10 NORMAL ZENER VOLTAGE, VOLTS 100 100 125 150 TEMPERATURE ( C) Fig.5 STEADY STATE POWER DERATING Fig.6 TYPICAL CAPACITANCE STAD-DEC.02.2004 PAGE . 3 100 TA=25 C o 100 TA=25 oC ZENER CURRENT,mA 10 ZENER CURRENT,mA 10 1 1 0.1 0.1 0.01 0 2 4 6 8 10 12 0.01 10 30 50 70 90 ZENER VOLTAGE, VOLTS Fig.7 ZENER VOLTAGE VERSUS ZENER CURRENT ZENER VOLTAGE, VOLTS Fig.8 ZENER VOLTAGE VERSUS ZENER CURRENT 1000 LEAKAGE CURRENT,uA 100 10 1 0.1 0.01 0.001 0.0001 0.00001 0 10 20 30 40 50 60 70 +150 C O +25 C -55 C 80 90 O O NORMAL ZENER VOLTAGE, VOLTS Fig.9 TYPICAL LEAKAGE CURRENT STAD-DEC.02.2004 PAGE . 4
BZX84B28
物料型号: - BZX84B系列,包括BZX84B4V3、BZX84B4V7、BZX84B5V1等,直到BZX84B39。

器件简介: - BZX84B系列为表面贴装硅齐纳二极管,电压范围从4.3V至39V,功率为410mW,封装为SOT-23。 - 特点包括平面芯片结构、适合自动化装配流程、无铅产品符合RoHS环保指令。

引脚分配: - 引脚可焊性符合MIL-STD-202G标准,方法208。极性见下图,具体图示未提供。

参数特性: - 最大正向电压降(Vf)在10mA时为0.9V。 - 功率耗散(Pd)为410mW,在25°C时。 - 峰值正向浪涌电流(FSM)为20A,8.3ms单次半正弦波或等效方波,最大占空比为每分钟4脉冲。

功能详解: - 该系列二极管主要用于稳定电压,具有不同的额定电压值,从4.3V至39V不等。 - 每个型号的最小和最大反向电压值、最大齐纳阻抗、最大漏电流等参数均有详细列出。

应用信息: - 适用于需要电压稳定和保护的电路,如电源、信号处理等。

封装信息: - 所有型号均为SOT-23封装,具体尺寸和重量未在文档中提供,但通常SOT-23封装的尺寸约为3.0mm x 1.6mm x 0.8mm,重量轻。
BZX84B28 价格&库存

很抱歉,暂时无法提供与“BZX84B28”相匹配的价格&库存,您可以联系我们找货

免费人工找货