ED1006CT

DATA SHEET ED1002CT~ED1006CT SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER VOLTAGE FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory • Glass passivated junction • Pb free product are available : 99% Sn above can meet Rohs environment .307(7.8) .283(7.2) .225(5.7) .209(5.3) .063(1.6) .047(1.2) .264(6.7) .248(6.3) .098(2.5) .082(2.1) .024(0.6) .016(0.4) 200 to 600 Volts CURRENT 10 Amperes TO-251AB Unit : inch (mm) • Easy pick and place .216(5.5) .200(5.1) Flammability Classification 94V-O substance directive request .071(1.8) .051(1.3) .032(0.8) .012(0.3) .02(0.5) .09 .09 (2.3) (2.3) MECHANICALDATA Case: D PAK/TO-252 molded plastic Terminals: Solder plated, solderable per MIL-STD-202G,Method 208 Polarity: Color band denotes cathode Standard packaging: 16mm tape (EIA-481) Weight: 0.015 ounce, 0.4 gram. MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% PARAMETER Maxi mum Recurrent Peak Reverse Voltage Maxi mum RMS Voltage Maxi mum D C Blocki ng Voltage Maxi mum Average Forward C urrent .375"(9.5mm) lead length at Tc=100OC Peak Forward Surge C urrent, 8.3ms si ngle half si ne-wave superi mposed on rated load(JED EC method) Maxi mum Forward Voltage at 5.0A Maxi mum D C Reverse C urrent TA=25 OC at Rated D C Blocki ng VoltageTA=100 OC Maxi mum Reverse Recovery Ti me (Note 1) Maxi mum thermal Resi stance (Note 2) Operati ng and Storage Temperature RangeTJ,TSTG SYMBOL VRRM VRMS VDC IAV IFSM VF IR TRR RθJC RθJA TJ,TSTG E D 1002C T 200 140 200 E D 1003C T 300 210 300 E D 1004C T 400 280 400 E D 1006C T 600 420 600 UNITS V V V A A 10.0 100 0.95 1.3 5.0 50 35 11 80 -55 TO +150 O 1.7 V uA ns C/W O C NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 2. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas. 3. Both Bonding and Chip structure are available. REV.0-MAR.21.2005 PAGE . 1 RATING AND CHARACTERISTIC CURVES AVERAGE FORWARD CURRENT, AMPERES 8 6 4 .375"9.5mm LEADLENGHTS RESISTIVEORINDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, 10 150 125 100 75 50 25 0 8.3ms Single Half Since-Wave JEDEC Method 2 0 0 20 40 60 80 100 O 120 140 160 1 2 5 10 20 50 100 CASE TEMPERAURE, C Fig.1- FORWARD CURRENT DERATING CURVE NO. OF CYCLE AT 60HZ Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT 10 3 10 50-200V REVERSE CURRENT, uA 10 2 T J =125 C O FORWARD CURRENT, AMPERES 300-400V 10 1 1.0 10 0 10 -1 T J= 2 5 C O TA=2 5 C 0.1 0.4 O 10 -2 20 40 60 80 100 120 0.6 0.8 1.0 1.2 1.4 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FORWARD VOLATGE, VOLTS Fig.3- TYPICAL REVERSE CHARACTERISTIC Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC REV.0-MAR.21.2005 PAGE . 2