GMZJ33

DATA SHEET GMZJ2.0~GMZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts MICRO-MELF Unit : inch (mm) FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .043(1.1) .008(0.2) .008(0.2) .049(1.25) .047(1.2)DIA. MECHANICAL DATA • Case: Molded Glass MICRO-MELF • Terminals: Solderable per MIL-STD-202E, Method 208 • Polarity: See Diagram Below • Approx. Weight: 0.01 grams • Mounting Position: Any • Packing information T/R - 2.5K per 7" plastic Reel .079(2.0) .071(1.8) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation at Tamb = 25 Junction Temperature Storage Temperature Range Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. O Symbol Value 500 175 -65 to +175 Units mW O C PTOT TJ TS C C O Parameter Thermal Resi stance Juncti on to Ambi ent Ai r Forward Voltage at IF = 100mA Symbol Mi n. --- Typ. Max. 0.3 1 Uni ts K/mW V RthA VF --- Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature. STAD-SEP.14.2004 PAGE . 1 Part Number GMZJ 2.0 GMZJ 2.2 GMZJ 2.4 GMZJ 2.7 GMZJ 3.0 GMZJ 3.3 GMZJ 3.6 GMZJ 3.9 C LA S S A B A B A B A B A B A B A B A B A B C A V Z @ IZT M i n. V 1.88 2.02 2.12 2.22 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.455 3.60 3.74 3.89 4.04 4.17 4.30 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.70 9.94 10.18 10.50 10.82 M a x. V 2.10 2.20 2.30 2.41 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.695 3.845 4.01 4.16 4.29 4.43 4.57 4.68 4.80 4.93 5.07 5.20 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.30 9.59 9.90 10.20 10.44 10.71 11.05 11.38 IZ (m A ) 5 5 5 5 5 5 5 5 VR (V ) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 IR ( u A ) MA X 120 100 120 100 50 20 10 5 Iz t (mA ) 5 5 5 5 5 5 5 5 Z ZT ( Ω ) MA X 100 100 100 110 120 120 100 100 IZK (m A) 0.5 0.5 0.5 0.5 0.5 0.5 1 1 Z ZK ( Ω ) MA X 1000 1000 1000 1000 1000 1000 1000 1000 GMZJ 4.3 5 1.0 5 5 100 1 1000 GMZJ 4.7 B C A 5 1.0 5 5 90 1 900 GMZJ 5.1 B C A 5 1.5 5 5 80 1 800 GMZJ 5.6 B C A 5 2.5 5 5 60 1 500 GMZJ 6.2 B C A 5 3.0 5 5 60 1 300 GMZJ 6.8 B C A 5 3.5 2 5 20 0.5 150 GMZJ 7.5 B C A 5 4.0 0.5 5 20 0.5 120 GMZJ 8.2 B C A 5 5.0 0.5 5 20 0.5 120 GMZJ 9.1 B C A B C D A 5 6.0 0.5 5 25 0.5 120 GMZJ 10 5 7.0 0.2 5 30 0.5 120 GMZJ 11 B C 5 8.0 0.2 5 30 0.5 120 STAD-SEP.14.2004 PAGE . 2 Part Number C LA S S A V Z @ IZT M i n. V 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.80 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 20.15 20.64 21.08 21.52 22.05 22.61 23.12 23.63 24.26 24.97 25.63 26.29 26.99 27.70 28.36 29.02 29.68 30.32 30.90 31.49 32.14 32.79 33.40 34.01 34.68 35.36 36.00 36.63 40.00 44.00 48.00 53.00 M a x. V 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.70 18.33 18.96 19.59 20.22 20.72 21.20 21.71 22.17 22.63 23.18 23.77 24.31 24.85 25.52 26.26 26.95 27.64 28.39 29.13 29.82 30.51 31.22 31.88 32.50 33.11 33.79 34.49 35.13 35.77 36.47 37.19 37.85 38.52 45.00 49.00 54.00 60.00 IZ (m A ) 5 VR (V ) 9.0 IR ( u A ) MA X 0.2 Iz t (mA ) 5 Z ZT ( Ω ) MA X 30 IZK (m A) 0.5 Z ZK ( Ω ) MA X 110 GMZJ 12 B C A GMZJ 13 B C A 5 10 0.2 5 35 0.5 110 GMZJ 15 B C A 5 11 0.2 5 40 0.5 110 GMZJ 16 B C A 5 12 0.2 5 40 0.5 150 GMZJ 18 B C A B C D A B C D A B C D A B C D A B C D A B C D A B C D A B C D 5 13 0.2 5 45 0.5 150 GMZJ 20 5 15 0.2 5 55 0.5 200 GMZJ 22 5 17 0.2 5 30 0.5 200 GMZJ 24 5 19 0.2 5 35 0.5 200 GMZJ 27 5 21 0.2 5 45 0.5 250 GMZJ 30 5 23 0.2 5 55 0.5 250 GMZJ 33 5 25 0.2 5 65 0.5 250 GMZJ 36 5 27 0.2 5 75 0.5 250 GMZJ 39 5 30 0.2 5 85 0.5 250 GMZJ 43 GMZJ 47 GMZJ 51 GMZJ 56 5 5 5 5 33 36 39 43 0.2 0.2 0.2 0.2 5 5 5 5 90 90 110 110 ----- ----- STAD-SEP.14.2004 PAGE . 3 Typical Characteristics (Tamb = 25 °C unless otherwise specified) RthJA –Therm.Resist.Junction/ Ambient ( K/W) 500 VZtn – Relative VoltageChange 1.3 V Ztn=V Zt/V Z(25°C) 400 1.2 1.1 1.0 0.9 0.8 –60 TK VZ =10 x 10–4/K 300 l l 8 x 10–4/K 6 x 10–4/K 4 x 10–4/K 2 x 10–4/K 0 –2 x 10–4/K –4 x 10–4/K 200 100 TL=constant 0 0 5 10 15 20 l – Lead Length ( mm ) 0 60 120 180 240 95 961 1 95 9599 Tj – Junction Temperature (°C ) Fig. 1 Thermal Resistance vs. Lead Length Fig. 4 Typical Change of Working Voltage vs. Junction Temperature TK VZ –Temperature Coefficient of VZ ( 10–4 /K) P –Total Power Dissipation ( mW) tot 600 500 400 300 15 10 5 I Z=5mA 200 100 0 0 –5 0 10 20 30 40 0 40 80 120 160 200 50 95 9602 Tamb – Ambient T emperature(°C ) 95 9600 V Z – Z-Voltage ( V ) Fig. 2 Total Power Dissipation vs. Ambient Temperature Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage 1000 CD – Diode Capacitance ( pF ) 200 VZ –VoltageChange mV ) ( Tj =25°C 100 150 V R=2V Tj =25°C 100 I Z=5mA 10 50 1 0 95 9598 0 5 10 15 20 25 95 9601 0 5 10 15 20 25 V Z – Z-Voltage ( V ) V Z – Z-Voltage ( V ) Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Fig. 6 Diode Capacitance vs. Z-Voltage STAD-SEP.14.2004 PAGE . 4 100 I F – Forward Current ( mA) 50 40 30 20 10 0 Ptot=500mW Tamb=25°C Tj =25°C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 IZ – Z-Current ( mA) 10 15 95 9607 20 25 30 35 95 9605 V F – Forward Voltage ( V ) V Z – Z-Voltage ( V ) Fig. 7 Forward Current vs. Forward Voltage Fig. 9 Z-Current vs. Z-Voltage IZ – Z-Current ( mA) 80 60 40 20 0 0 4 8 12 r Z – Differential Z-Resistance ( Ω ) 100 1000 Ptot=500mW Tamb=25°C I Z=1mA 100 5mA 10 10mA 1 Tj =25°C 0 5 10 15 20 25 V Z – Z-Voltage ( V ) 16 20 95 9606 95 9604 V Z – Z-Voltage ( V ) Fig. 8 Z-Current vs. Z-Voltage Zthp –ThermalResistance PulseCond.(K/W) for Fig. 10 Differential Z-Resistance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 RthJA=300K/W T=Tjmax–Tamb tp/T=0.01 tp/T=0.02 tp/T=0.05 i ZM =(–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 100 101 tp – Pulse Length ( ms ) 102 1 10–1 95 9603 Fig. 11 Thermal Response STAD-SEP.14.2004 PAGE . 5