GS2008HE

GS2008HE

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    GS2008HE - SURFACE MOUNT RECTIFIER - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
GS2008HE 数据手册
SURFACE MOUNT RECTIFIER VOLTAGE FEATURES • For surface mounted applications • Low profile package • Easy pick and place • Low Forward Drop • Glass Passivated Chip Junction • In compliance with EU RoHS 2002/95/EC directives 0.075(1.90) 0.067(1.70) 800 Volts CURRENT 1.0 Amperes 0.046(1.15) O Unit:inch(mm) 0.033(0.85) 0.114(2.90) 0.106(2.70) 0.012(0.30) 0.007(0.20) 0.040(1.00) 0.031(0.80) MECHANICAL DATA • Case: SOD-123HE molded plastic • Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 • Polarity: Indicated by cathode band 0.154(3.90) 0.137(3.50) 0.091(2.30) 0.074(1.90) 0.048(1.20) 0.031(0.80) 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate current by 20% P A RA M E TE R M a xi m um R e c ur r e nt P e a k Re ve r s e V o l t a g e M a xi m um R M S V o lt a g e M a xi m um D C B l o c k i ng V o l t a g e M a xi m um A ve r a g e F o r w a r d C ur r e nt h a t T L = 1 0 0 O S YM B O L G S 2 0 0 8 HE 800 560 800 2 .0 50 1 .1 1 .0 50 12 100 -5 5 to +1 5 0 U N ITS V V V A A V V R RM V RMS V DC C IF ( A V ) IF S M VF IR CJ R θJL T J , T S TG P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - wa ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d ) M a xi m um F o r w a r d V o lt a g e a t 1 . 0 A M a xi m um D C Re ve r s e C ur r e nt a t T J = 2 5 O C R a t e d D C B l o c k i ng Vo l t a g e T J = 1 2 5 O C Typ i c a l J unc t i o n c a p a c i t a nc e ( N o t e 1 ) Typ i c a l J unc t i o n R e s i s t a nc e ( N o t e 2 ) O p e r a t i ng a nd S t o r a g e Te m p e r a t ur e R a ng e μA pF C/W O C NOTES:1. Measured at 1 MHz and applied V r = 4 .0 volts. 2. 8.0 mm 2 ( . 013mm thick ) land areas. REV.0.0-DEC.17.2009 PAGE . 1 GS2008HE RATING AND CHARACTERISTIC CURVES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 O PRELIMINARY SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B MOUNTED ON 0.3 x 0.3" (8.0 x 8.0mm) COPPER PAD AREAS 150 LEAD TEMPERATURE, C Fig.1 FORWARD CURRENT DERATING CURVE REV.0.0-DEC.17.2009 PAGE . 2 GS2008HE MOUNTING PAD LAYOUT Unit:inch(mm) PRELIMINARY 0.091 (2.3) 0.022 (0.55) 0.049 (1.25) 0.055 ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-DEC.17.2009 (1.4) PAGE . 3
GS2008HE
1. 物料型号: - 型号为GS2008HE。

2. 器件简介: - 该器件是一个表面安装整流器,电压800伏特,电流1.0安培。具有低轮廓封装、易于拾放、低正向压降、玻璃钝化芯片结、符合欧盟RoHS 2002/95/EC指令。

3. 引脚分配: - 封装为SOD-123HE模塑塑料,端子为镀锡,可焊性符合MIL-STD-750, Method 2026,极性由阴极带表示。

4. 参数特性: - 最大重复峰值反向电压:800V - 最大RMS电压:560V - 最大直流阻断电压:800V - 最大平均正向电流(T=100°C):2.0A - 正向峰值浪涌电流(8.3ms单半正弦波叠加在额定负载上,JEDEC方法):50A - 最大正向电压在1.0A时:1.1V - 最大直流反向电流在T=25°C额定直流阻断电压T=125°C时:1.0A/50A - 典型结电容(注1):12pF - 典型结电阻(注2):100°C/W - 工作和存储温度范围:-55至+150°C

5. 功能详解: - 该器件适用于表面安装应用,具有低正向压降和玻璃钝化芯片结,符合环保要求。

6. 应用信息: - 适用于需要高电压整流的应用场合。

7. 封装信息: - 封装类型为SOD-123HE,具体尺寸和布局图在文档中有详细描述。
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