LMSD103B

LMSD103B

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    LMSD103B - SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
LMSD103B 数据手册
LMSD103A~LMSD103C SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES VOLTAGE 20 to 40 Volts CURRENT 0.35 Amperes MICRO-MELF Unit : inch (mm) FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • • • • Case: Molded Glass MICRO-MELF Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: See Diagram Below Approx. Weight: 0.011 grams .043(1.1) .008(0.2) .008(0.2) .079(2.0) .071(1.8) • Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) PA RA M E TE R P e a k R e p e t i t i ve R e ve r s e V o l t a g e R M S R e ve r s e V o l t a g e M a x. A ve r a g e R e c t i f i e d C ur r e nt P e a k F o r w a r d S ur g e C ur r e nt , t < 0 . 3 m s P o w e r D i s s i p a t i o n D e r a t e A b o ve 2 5 O C M a x i m u m F o r w a r d V o l t a g e , IF = 2 0 m A IF = 2 0 0 m A M a xi m um R e ve r s e C ur r e nt Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 ) Ty p i c a l R e v e r s e R e c o v e r y ( N o t e 2 ) Ty p i c a l T h e r m a l R e s i s t a n c e S t o r a g e Te m p e r a t u r e R a n g e S YM B O L VRRM VRMS IF ( A V ) IF S M PD VF IR CJ trr RθJ A TS T G LMS D 103A 40 28 LMS D 103B 30 21 350 15 400 0 .3 7 0 .7 0 LMS D 103C 20 14 .040(1.0) .048(1.2)DIA. U N IT S V V mA A mW V 5@30V 5@20V 50 10 250 -6 5 to +1 7 5 5@10V µA pF ns O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=50mA to IR=200mA, RL=100Ω STAD-FEB.09.2009 PAGE . 1 LMSD103A~LMSD103C RATING AND CHARACTERISTIC CURVES 500 1000 FORWARD CURRENT (mA) 400 POWER DISSIPATION,mW 100 300 10 200 1.0 100 0.1 0.01 0 0.5 1.0 0 0 100 200 O FORWARD VOLTAGE (V) AMBIENT TEMPERATURE ( C) Fig.1 FORWARD CHARACTERISTICS Fig.2 POWER DISSIPATION DERATING CURVE 100 C J , CAPACITANCE (pF) 10 1.0 0.1 0 10 20 30 40 50 V R , REVERSE VOLTAGE (V) Fig.3 TYPICAL CAPACITANCE vs REVERSE VOLATGE STAD-FEB.09.2009 PAGE . 2 LMSD103A~LMSD103C MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 2.5K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-FEB.09.2009 PAGE . 3
LMSD103B
物料型号: - 型号:LMSD103A~LMSD103C

器件简介: - 器件类型:小型信号肖特基势垒开关二极管,电压范围20至40伏特,电流0.35安培。 - 特点:低正向电压降、保护环结构以防止瞬态现象、低反向恢复时间、低反向电容、符合欧盟RoHS 2002/95/EC指令。

引脚分配: - 封装类型:模塑玻璃微型MELF - 引脚:根据MIL-STD-750,方法2026可焊 - 极性:请见下图 - 安装位置:任意

参数特性: | 参数 | 符号 | LMSD103A | LMSD103B | LMSD103C | 单位 | | --- | --- | --- | --- | --- | --- | | 峰值重复反向电压 | VRM | 40 | 30 | 20 | V | | 有效值反向电压 | VRMs | 28 | 21 | 14 | V | | 最大平均整流电流 | E(AV) | - | 350 | - | mA | | 峰值正向浪涌电流,ts0.3ms | FSM | - | 15 | - | A | | 功率耗散在25°C以上降低 | Pd | 400 | - | - | mW | | 最大正向电压,1mA = 20mA 200mA | V | 0.37 0.70 | - | - | V | | 最大反向电流 | I | 5@30V | 5@20V | 5@10V | A | | 典型结电容(注1) | C | 50 | - | - | pF | | 典型反向恢复时间(注2) | tr | 10 | - | - | ns | | 典型热阻 | RthJA | 250 | - | - | °C/W | | 存储温度范围 | TSTG | - | -65至+175 | - | °C |

功能详解: - 正向特性图、功率耗散降低曲线、典型电容与反向电压关系图。

应用信息: - 包装信息:T/R - 每13英寸塑料卷10000个,T/R - 每7英寸塑料卷2500个。

封装信息: - 封装类型:微型MELF,具体尺寸和重量信息未在文档中提供。
LMSD103B 价格&库存

很抱歉,暂时无法提供与“LMSD103B”相匹配的价格&库存,您可以联系我们找货

免费人工找货