MMBD330W_09

MMBD330W_09

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    MMBD330W_09 - SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBD330W_09 数据手册
MMBD330W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE FEATURES .004(.10)MIN. 30 Volts POWER 200mWatts SOT-323 Unit: inch (mm) • Low Capacitance: 1.5 pF (Max) at VR=15V • Very Low VF: 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives .087(2.2) .070(1.8) .054(1.35) .045(1.15) MECHANICAL DATA • Case: SOT-323 plastic case. • Terminals : Solderable per MIL-STD-750,Method 2026 • Weight: approximately 0.0041gram .056(1.40) .047(1.20) .006(.15) .002(.05) .004(.10)MAX. .016(.40) .078(.20) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Parameter Marking Code Reverse Voltage Peak Reverse Voltage Maximum Forward Current Power Dissipation (1) Thermal Resistance , Junction to Ambient (1) Junction Temperature Range Storage Temperature Range Symbol MMBD330W 330 30 30 0.2 200 635 -55 to +125 -55 to +150 VR VR R M IF P to t RθJ A TJ TS TG .044(1.1) .035(0.9) Units V V A mW O C/W O C C O SINGLE NOTE: 1. FR-4 Board = 70 X 60 X 1mm. Fig.14 REV.0.1-FEB.27.2009 .087(2.2) .078(2.0) PAGE . 1 MMBD330W ELECTRICAL CHARACTERISTICS (TJ=25OC unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Leakage C urrent Forword Voltage Forword Voltage T tal C apaci tance o Symbol T st C ondi ti on e IR=10µA VR=25V IF=1.0mA IF=10mA VR=15V, f=1.0MHz Mi n. 30 Typ. Max. 0.2 0.45 0.6 1.5 Uni ts V µA V V pF V(B R ) IR VF VF CJ ELECTRICAL CHARACTERISTICS CURVES 100 100 IF, Forward Current (mA) IR, Reverse Current (mA) 10 T J = 125 °C 10 T J = 125 °C T J = 75 °C 1 T J = 75 °C 0.1 1 TJ = 25 °C T J = 25 °C 0.01 T J = - 25 °C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 20 30 40 VF, Forward Voltage (V) VR, Reverse Voltage (V) FIG. 1-TYPICAL FORWARD CHARACTERISTIC FIG. 2-TYPICAL REVERSE CHARACTERISTICS 2.4 CJ , Total Capacitance (pF) f = 1MHz 2.0 1.6 1.2 0.8 0.4 0.0 0 5 10 15 20 25 30 V R , Reverse Voltage (Volts) FIG. 3 TYPICAL TOTAL CAPACITANCE REV.0.1-FEB.27.2009 PAGE . 2 MMBD330W MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.27.2009 PAGE . 3
MMBD330W_09
### 物料型号 - 型号:MMBD330W

### 器件简介 - 类型:表面贴装高频肖特基二极管 - 电压:30伏特 - 功率:200毫瓦

### 引脚分配 - 封装:SOT-323塑料封装 - 引脚:可焊性符合MIL-STD-750, Method 2026

### 参数特性 - 低电容:最大1.5皮法(在15伏特反向电压下) - 低正向电压:典型值0.36伏特(在1毫安电流下) - 极快的开关速度 - 符合欧盟RoHS 2002/95/EC指令

### 功能详解 - 最大额定值和热特性: - 反向电压:30伏特 - 最大电流:2.0安培 - 功率耗散:0.2瓦特 - 存储温度:-65至150摄氏度 - 工作结温:-55至150摄氏度

### 应用信息 - 该型号适用于高频应用,由于其低电容和快速开关特性,适合用于射频电路和高速开关应用。

### 封装信息 - 安装垫布局:提供了SOT-323封装的安装垫布局图。
MMBD330W_09 价格&库存

很抱歉,暂时无法提供与“MMBD330W_09”相匹配的价格&库存,您可以联系我们找货

免费人工找货