MMBD770W_09

MMBD770W_09

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    MMBD770W_09 - SURFACE MOUNT SCHOTTKY DIODES - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBD770W_09 数据手册
DATA SHEET MMBD770W SURFACE MOUNT SCHOTTKY DIODES .004(.10)MIN. SOT-323 Unit: inch (mm) VOLTAGE FEATURES 70 Volts POWER 200mA .087(2.2) .070(1.8) .054(1.35) .045(1.15) • Extremely low minority carrier lifetime • Low capacitance ( 0.4pF @ 20V typical ) • Low reverse leakage ( 30nA @ 35V typical ) • Surface mount package ideally suited for automatic insertion . .056(1.40) .047(1.20) .006(.15) .002(.05) In compliance with EU RoHS 2002/95/EC directives .004(.10)MAX. MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202G, Method 208 Approx. Weight: 0.0048 gram .016(.40) .0 0 8(.20) Marking : 770 MAXIMUM RATINGS Ratings at 25OC ambient temperature unless otherwise specified. PARAMETER Maximum Reverse Voltage Peak Reverse Voltage Continuous Forward Current Power Dissipation (1) SYMBOL VR V RRM IF P TOT RΘJ A TJ T STG VALUE 70 70 0.25 1 80 5 56 -50 to 125 -50 to 150 .044(1.1) .035(0.9) Thermal Resistance , Junction to Ambient (1) Junction Temperature Storage Temperature Notes : 1. FR-5 Board = 1.0 × 0.75 × 0.062 in. ELECTRICAL CHARACTERISTICS (T A=25OC, unless otherwise noted) PARAMETER Reverse Breakdown Voltage Reverse Current Forward Voltage Total Capacitance SYMBOL V (BR) IR VF CT TEST CONDITION IR=10uA V F=35V IF =1mA IF =10mA V R=20V, f =1MHz MIN. 70 TYP. MAX. 0.2 0.5 1.0 1.0 UNIT V uA V pF .087(2.2) .078(2.0) UNIT V V A mW O C/W O C O C REV.0.1-FEB.23.2009 PAGE . 1 CHARACTERISTIC CURVES 100 100 Reverse Leakage, I R ( uA) T J = 125 °C Forward Current, I F ( mA) TJ = 125 °C 10 10 1 T J = 75 °C T J = 75 °C TJ = -25 °C 0.1 T J = 25 °C 1 TJ = 25 °C 0.01 0 20 40 60 80 Reverse Voltage, VR (V) 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage, V F (V) Fig. 1. Typical Reverse Leakage Fig. 2. Typical Forward Voltage 1.4 1.2 ( pF) 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 Total Capacitance, C T VR, Reverse Voltage (V) Fig. 3. Typical Total Capacitance REV.0.1-FEB.23.2009 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-FEB.23.2009 PAGE . 3
MMBD770W_09
1. 物料型号: - 型号:MMBD770W

2. 器件简介: - 该器件是一种表面安装肖特基二极管,具有70伏特的电压和200毫安的功率。 - 特点包括极低的少数载流子寿命、低电容(20V时典型值为0.4pF)、低反向漏电流(35V时典型值为30nA)。 - 表面安装封装非常适合自动插入,并符合欧盟RoHS 2002/95/EC指令。

3. 引脚分配: - 封装类型为SOT-323塑料封装,引脚可焊性符合MIL-STD-202G标准方法208。

4. 参数特性: - 最大反向电压:70V - 峰值反向电压:70V - 连续正向电流:0.25A - 功率耗散:180mW - 热阻,结到环境:556°C/W - 结温:-50到125°C - 存储温度:-50到150°C

5. 功能详解: - 电气特性包括反向击穿电压、反向电流、正向电压和总电容,其中反向击穿电压在10μA时为70V,反向电流在35V时典型值为0.2μA,正向电压在1mA和10mA时分别为0.5V和1.0V,总电容在20V和1MHz时典型值为1.0pF。

6. 应用信息: - 该器件适用于需要低电容和低反向漏电流的应用场合。

7. 封装信息: - 封装类型:SOT-323塑料封装。 - 标记:770。 - 重量:约0.0048克。
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