MMBFJ309 / MMBFJ310 J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR
N-CHANNEL
For VHF/UHF Applications
3
G S
1
D
2
1
2
3 DEVICE MARKING MMBFJ309 = B9J; MMBFJ310 = B1J
SOT-23
Note: Drain and Source are interchangeable.
ELECTRICAL RATINGS
Rating Drain to Source Voltage Gate to Source Voltage Gate Current Symbol V DS V GS IG Value 25 25 10 Units V V mAdc
THERMAL RATINGS
Rating Power Dissipation (Note 1) Thermal Resistance - Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range Symbol Pd R JA TJ Tstg Value 225 556 -55 to +150 -55 to +150 Units mW °C/W °C °C
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
9/19/2005
Page
1
www.panjit.com
MMBFJ309 / MMBFJ310
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameter Gate-Source Breakdown Voltage Gate Reverse Current Symbol V(BR)GSS I GSS Conditions I G = -1.0 µA, VDS = 0 VGS = -15Vdc VGS = -15Vdc T =125°C J VDS = 10Vdc I DS = 1.0nAdc Min -25 -1.0 -2.0 Typical Max -1.0 -1.0 -4.0 -6.5 Units V nA µA V V
Gate-Source Cutoff Voltage
MMBFJ309 MMBFJ310
VGS (off)
ON CHARACTERISTICS
Parameter Zero Gate Current Drain Current Symbol Conditions VDS = 10Vdc VGS = 0Vdc I G = 1.0 mA, VDS = 0 Min 12 24 Typical Max 30 60 1.0 Units mA mA V
MMBFJ309 MMBFJ310
Gate-Source Forward Voltage
I DSS
VGS(f)
SMALL-SIGNAL CHARACTERISTICS
Parameter Forward Transfer Admittance Output Admittance Input Capacitance Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage Symbol Yfs y os C iss C rss Conditions I D = 10 mA, VDS = 10 V f = 1.0 kHz I D = 10 mA, VDS = 10 V f = 1.0 kHz V GS = -10V, VDS = 0V f = 1.0 MHz V GS = -10V, VDS = 0V f = 1.0 MHz I D = 10 mA, VDS = 10 V f = 100 Hz Min 8.0 -
Typical 10
Max 18 250 5.0 2.5
-
Units mmhos µmhos pF pF
en
nV / Hz
9/19/2005
Page 2
www.panjit.com
MMBFJ309 / MMBFJ310
PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT
9/19/2005
Page 3
www.panjit.com
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