MMBT2222AW

DATA SHEET MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • NPN epitaxial silicon, planar design .087(2.2) .070(1.8) .054(1.35) .045(1.15) 40 Volts POWER 150 mWatts SOT-323 Unit: inch (mm) • Collector current IC = 600mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .056(1.40) .047(1.20) .006(.15) .002(.05) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: M2A Top View 3 Collector 1 BASE 3 COLLECTOR .016(.40) .078(.20) .004(.10)MAX. 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R C ol ct r-E m it rVolage lo e te t C ol ct r-B ase Volage lo e t E m it r-B ase Volage te t C ol ct rC urent-C ontnuous lo e r i S ym bol V C EO V C BO V EBO IC Val e u 40 75 6. 0 600 U nis t V V V mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TISTG Value 150 833 -55 to 150 -55 to 150 Units mW O .044(1.1) .035(0.9) .087(2.2) .078(2.0) • Collector-emitter voltage VCE = 40V .004(.10)MIN. C/W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.06.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS P A R A M E TE R C o le ct r - E m i t r B re a kd o w n V o l a g e lo te t C o le ct r - B a se B re a kd o w n V o l a g e lo t E m i t r - B a se B re a kd o w n V o l a g e te t B a se C ut f C urre nt of S ym b o l V (B R )C E O V (B R )C B O V (B R )E B O IL B C I EX Te st C o nd i i n to I =1. m A , I =0 C 0 B I = 1 0 uA , I = 0 C E I = 1 0 uA , I = 0 E C V C E =60V , V E B =3. V 0 V C E =60V , V E B =3. V 0 V C E =60V , I =0, E V C E = 6 0 V , I = 0 , J= 1 2 5 O C E T V E B =3. V , I =0, 0 C I =0. m A , V C E =10V C 1 I =1. m A , V C E =10V C 0 I =10m A , V C E =10V C C T I = 1 0 m A , V C E = 1 0 V , J= 1 2 5 O C I = 1 5 0 m A , V C E = 1 0 V (N o t 2 ) C e I = 1 5 0 m A , V C E = 1 V (N o t 2 ) C e I = 5 0 0 m A , V C E = 1 0 V (N o t 2 ) C e I =150m A , I =15m A C B I =500m A , I =50m A C B I =150m A , I =15m A C B I =500m A , I =50m A C B V C B =10V , I =0, f 1M H z E = V C B =0. V , I =0, f 1M H z 5 C = V C C = 3 V , B E = -5 V , V I =150m A ,B =15m A C I V C C = 3 V , B E = -5 V , V I =150m A ,B =15m A C I V C C =30V ,C =150m A I I 1=I 2=15m A B B V C C =30V ,C =150m A I I 1=I 2=15m A B B MI . N 40 75 6. 0 35 50 75 35 100 50 40 0. 6 - TYP. - M AX. 20 10 10 10 100 300 0. 3 1. 0 1. 2 2. 0 8. 0 25 10 25 225 60 U ni s t V V V nA nA nA uA nA C o le ct r C ut f C urre nt lo of I BO C E m i t r C ut f C urre nt te of I BO E D C C urre nt G a i n hF E - C o le ct r - E m i t r S a t ra t o n V o l a g e lo te ui t (N o t 2 ) e B a se - E m i t r S a t ra t o n V o l a g e te ui t (N o t 2 ) e C o le ct r - B a se C a p a ci a nce lo t E m i t r - B a se C a p a ci a nce te t D e l y Ti e a m R i e Ti e s m S t ra g e Ti e o m F a l Ti e lm V C E (S A T) V B E (S A T) C CBO C EBO t d t r t s t f V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 3 00 us, Duty Cycle < 2 .0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V +16V 0 -2V < 2ns 1.0 to 100us Duty Cycle ~ 2.0% 200Ω +16V 0 1.0 to 100us Duty Cycle ~ 2.0% 200Ω 1KΩ CS* < 10pF -14V < 20ns 1KΩ 1N914 -4V CS* < 10pF Scope rise time < 4ns Fig. 1. Turn-On Time * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 2. Turn-Off Time STAD-JUL.06.2004 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 350 300 250 TJ = 100˚ C 200 hFE 150 100 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) VCE = 10V TJ = 25˚ C TJ = 150˚ C 0.8 0.7 0.6 0.5 V BE ( on) 0.4 0.3 0.2 VCE = 10V 0.1 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 100˚ C TJ = 150˚ C TJ = 25˚ C Fig. 3. Typical hFE vs Collector Current 500 450 400 350 IC/IB = 10 TJ = 150 ˚C Fig. 4. Typical VBE vs Collector Current 1.2 IC/IB = 10 1.0 VCE (sat) (mV) 0.8 V BE ( sat) (V) TJ = 25 ˚C 0.6 TJ = 150 ˚C 0.4 300 250 200 150 100 0.2 50 0 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 25 ˚C TJ = 100 ˚C 0.0 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 5. Typical VCE (sat) vs Collector Current 100 Fig. 6. Typical VBE (sat) vs Collector Current f=1 MHz Capacitance (pF) CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 7. Typical Capacitances vs Reverse Voltage STAD-JUL.06.2004 PAGE . 3 MOUNTING PAD LAYOUT SOT-323 Unit: inch (mm) 0.035(0.9) 0.025(0.65) 0.028(0.7) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-JUL.06.2004 0.075(1.9) PAGE . 4