MMBT2222AW_10

MMBT2222AW_10

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    MMBT2222AW_10 - NPN GENERAL PURPOSE SWITCHING TRANSISTOR - Pan Jit International Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2222AW_10 数据手册
MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives 40 Volts POWER 150 mWatts MECHANICAL DATA • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx. Weight: 0.0001 ounce, 0.005 gram • Marking: M2A ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO V EBO IC Value 40 75 6.0 600 Units V V V mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TSTG Value 150 830 -55 to 150 -55 to 150 Units mW O C/W O C C O Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. May 13.2010-REV.00 PAGE . 1 MMBT2222AW ELECTRICAL CHARACTERISTICS PA RA ME TE R C o lle c to r - E mi tte r B r e a k d o wn Vo lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E m i tte r - B a s e B re a k d o wn Vo lta g e B a s e C uto ff C urr e nt S ym b o l V ( B R) C E O V ( B R) C B O V ( B R) E B O IB L IC E X C o lle c to r C uto ff C ur re nt IC B O E m i tte r C uto ff C ur re nt IE B O V C E = 6 0 V, I E = 0 , V C E = 6 0 V, I E = 0 , T J = 1 2 5 O C V E B = 3 . 0 V, IC = 0 , I C = 0 .1 m A , V C E = 1 0 V I C = 1 .0 m A , V C E = 1 0 V I C = 1 0 mA , V C E = 1 0 V I C = 1 0 mA , V C E = 1 0 V,T J = 1 2 5 O C I C = 1 5 0 mA , V C E = 1 0 V (No te 2 ) I C = 1 5 0 mA , V C E = 1 V ( No te 2 ) I C = 5 0 0 mA , V C E = 1 0 V ( No te 2 ) I C = 1 5 0 mA , IB = 1 5 m A I C = 5 0 0 mA , IB = 5 0 m A I C = 1 5 0 mA , IB = 1 5 m A I C = 5 0 0 mA , IB = 5 0 m A V C B = 1 0 V, I E = 0 , f = 1 MHz V C B = 0 . 5 V, IC = 0 , f= 1 M Hz V C C = 3 V,V B E = - 5 V, I C = 1 5 0 mA ,IB = 1 5 mA V C C = 3 V,V B E = - 5 V, I C = 1 5 0 mA ,IB = 1 5 mA V C C = 3 0 V,I C = 1 5 0 mA I B 1 = I B 2 = 1 5 mA V C C = 3 0 V,I C = 1 5 0 mA I B 1 = I B 2 = 1 5 mA 35 50 75 35 100 50 40 0 .6 10 10 100 300 0 .3 1 .0 1 .2 2 .0 8 .0 25 10 25 225 60 nA uA nA Te s t C o nd i ti o n I C = 1 .0 m A , I B = 0 I C = 1 0 uA , IE = 0 I E = 1 0 uA , I C = 0 V C E = 6 0 V, V E B = 3 . 0 V V C E = 6 0 V, V E B = 3 . 0 V MIN. 40 75 6 .0 TYP. MA X . 20 10 Uni ts V V V nA nA D C C urre nt Ga i n hF E - C o lle c to r - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) B a s e - E m i tte r S a tura ti o n Vo lta g e ( No te 2 ) C o lle c to r - B a s e C a p a c i ta nc e E m i tte r - B a s e C a p a c i ta nc e D e la y Ti m e Ri s e Ti me S to ra g e Ti me F a ll Ti m e V C E ( S AT) V B E ( S AT) C CBO C EBO td tr ts tf V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 3 00 us, Duty Cycle < 2 .0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V 200 W + 16V 1.0 to 100us Duty Cycle ~ 2.0% 1K W < 20ns 1N914 -4V * To t a l s h u n t c a p a c i t a n c e o f t e s t j i g , c o n n e c t o r s , a n d o s c i l l o s c o p e C S * < 10pF +30V + 1 6V 0 1.0 to 1 00u s D uty C ycle ~ 2.0% 200 W -2 V < 2ns 1K W C * < 10pF S 0 -14 V Scope rise time < 4ns Fig. 1 Turn-On Time F i g . 2 T u r n - O ff T i m e May 13.2010-REV.00 PAGE . 2 MMBT2222AW ELECTRICAL CHARACTERISTICS CURVE 350 300 250 o 0.8 T J =150 oC 0.7 0.6 T J =25 oC V BE (on) T J =100 C h FE 200 T J =25 oC 150 100 50 0 0.1 V CE =10V 1 10 100 1000 0.5 0.4 0.3 0.2 0.1 0.0 T J =100 oC T J =150 C o V CE =10V 0.1 1 10 100 1000 Collector Current, I C (mA) Collector Current, I C (mA) Fig. 2. Typical BE V 1.2 Fig. 1. Typical h FE vs Collector Current 500 450 400 T J =150 oC vs Collector Current I C / I B =10 1.0 V CE (sat)(mV) 350 300 250 200 V BE (sat) (V) I C / I B =10 0.8 0.6 0.4 T J =25 oC T J =150 C T J =100 oC o 150 100 50 0 0.1 1 10 T J =25 C 100 1000 o 0.2 0.0 0.1 1 10 100 1000 Collector Current, I C (mA) Fig. 3. TypicalCE V (sat) vs Collector Current Collector Current, I C (mA) Fig. 4. Typical V BE (sat) vs Collector Current 100 Capacitance (pF) f= 1 MHz C IB (EB) 10 C OB (CB) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Typical Capacitances vs Reverse Voltage May 13.2010-REV.00 PAGE . 3 MMBT2222AW MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. May 13.2010-REV.00 PAGE . 4
MMBT2222AW_10
### 物料型号 - 型号:MMBT2222AW

### 器件简介 - 类型:NPN通用开关晶体管 - 电压:40伏特 - 功率:150毫瓦

### 引脚分配 - 封装:SOT-323,塑料封装 - 引脚:可焊性符合MIL-STD-750, Method 2026 - 标记:M2A

### 参数特性 - 集电极-发射极电压(VCEO):40V - 集电极-基极电压(VCBO):75V - 发射极-基极电压(VEBO):6.0V - 集电极连续电流(Ic):600mA

### 功能详解 - 最大功耗(PTOT):150mW - 结到环境的热阻(RAA):830°C/W - 结温范围(T):-55至150°C - 存储温度(TSTG):-55至150°C

### 应用信息 - 该晶体管符合欧盟RoHS 2002/95/EC指令,适用于需要NPN型晶体管的开关应用。

### 封装信息 - 封装类型:SOT-323 - 重量:约0.0001盎司,0.005克
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