MMBT3904FN3

MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) 40 Volts POWER 250 mWatts DFN 3L 0.042(1.05) 0.037(0.95) Unit : inch(mm) 0.0 22 (0.55) 0.047(0.45) MECHANICAL DATA Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Marking: AC 0.002(0.05) MAX. 0.013(0.32) 0.008(0.22) 0.022(0.55) 0.047(0.45) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.0 14 (0.20) 0.0 08 (0.20) 0.004(0.10) 0.0 08 (0.20) 2 3 1 ABSOLUTE RATINGS Parameter Collector - E mitter Voltage Collector - B ase Voltage Emitter - B ase Voltage Collector Current - C ontinuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 0.004(0.10) Units V V V mA THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient J unc ti o n Te m p e r a tur e Op e r a ti ng Te m p e r a tur e Symbol PTOT RJA TJ T S TG Value 250 500 -5 5 t o + 1 5 0 -5 5 t o + 1 5 0 Units mW O C/W O C C O Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.2-JUL.18.2009 PAGE . 1 MMBT3904FN3 ELECTRICAL CHARACTERISTICS P a ra me te r C o lle c t o r - E mi tt e r B r e a k d o wn V o lta g e C o lle c to r - B a s e B re a k d o wn Vo lta g e E mi tte r - B a s e B r e a k d o wn Vo lta g e B a s e C ut o f f C ur r e nt C o lle c to r C uto ff C urr e nt S ymb o l Te s t C o nd i ti o n MIN. 40 60 6 .0 40 70 100 60 30 0 .6 5 TYP. MA X . 50 50 300 0 .2 0 .3 0 .8 5 0 .9 5 4 .0 8 .0 35 35 200 50 Uni ts V V V nA nA V (B R) C E O IC = 1 .0 mA , IB = 0 V (B R) C B O IC = 1 0 uA , IE = 0 V (B R) E B O IB L IC E X IE = 1 0 uA , IC =0 V C E = 3 0 V, V E B = 3 .0 V V C E = 3 0 V, V E B = 3 .0 V IC = 0 .1 mA , V C E = 1 .0 V IC = 1 .0 mA , V C E = 1 .0 V IC = 1 0 mA , V C E = 1 .0 V IC = 5 0 mA , V C E = 1 .0 V IC = 1 0 0 mA , V C E = 1 .0 V IC = 1 0 mA , IB = 1 .0 mA IC = 5 0 mA , IB = 5 .0 mA IC = 1 0 mA , IB = 1 .0 mA IC = 5 0 mA , IB = 5 .0 mA V C B = 5 V, I E = 0 , f = 1 MHz V E B = 0 .5 V, IC =0 , f= 1 MHz V C C = 3 V,V B E = - 0 .5 V, IC = 1 0 mA ,IB =1 .0 mA V C C = 3 V,V B E = - 0 .5 V, IC = 1 0 mA ,IB =1 .0 mA V C C = 3 V,IC =1 0 mA IB 1 =IB 2 =1 .0 mA V C C = 3 V,IC =1 0 mA < 2.0%.=IB 2 =1 .0 mA IB 1 D C C urr e nt G a i n ( No te 2 ) hFE - C o lle c t o r - E mi tt e r S a tur a t i o n V o lta g e ( No te 2 ) B a s e - E mi tte r S a tur a ti o n Vo lta g e ( No te 2 ) C o lle c to r - B a s e C a p a c i ta nc e E mi tte r - B a s e C a p a c i ta nc e D e la y Ti me Ri s e Ti me S to ra g e Ti me F a ll Ti me V C E (S AT) V B E (S AT) C CBO C EBO td tr ts tf V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 3 00 us, Duty Cycle < 2 .0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V + 1 0 .9 V 0 -0 .5 V 300ns D u ty C y c le ~ 2 .0 % 275 < 1ns 10K C S* < 4 p F D e la y a n d R is e T im e E q u iv a le n t T e s t C ir c u it + 3V 27 5 + 10 .9 V 0 1 0 to 5 0 0 u s D u ty C yc le ~ 2 .0% -9 .1 V 10K < 1ns 1N916 C S * < 4 pF C S * < 4 pF S to ra g e a n d F a ll T im e E q u iv a le n t T e s t C irc u it REV.0.2-JUL.18.2009 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 300 250 200 hFE 150 TJ = 25 ˚C 100 0.400 1.400 TJ = 150 ˚C VCE = 1V 1.200 1.000 TJ = 100 ˚C VBE (V) 0.800 TJ = 25 ˚C 0.600 TJ = 100 ˚C 50 0 0.01 0.1 1 10 100 1000 0.200 0.000 0.01 0.1 TJ = 150 VCE = 1V 1 10 100 1000 Collector Current, I C (mA) Collector Current, IC (mA) Fig. 1. Typical hFE vs Collector Current 1.000 Fig. 2. Typical VBE vs Collector Current 1.0 TJ = 25 ˚C IC/IB = 10 TJ = 150 ˚C TJ = 100 ˚C VCE(sat) (V) 0.100 TJ = 25 ˚C VBE(sat) (V) TJ = 150 ˚C IC/IB = 10 0.010 0.01 0.1 1 10 100 1000 0.1 0.01 0.1 1 Collector Current, I C (mA) 10 100 Collector Current, I C (mA) Fig. 3. Typical VCE (sat) vs Collector Current 10 Fig. 4. Typical VBE (sat) vs Collector Current TJ = 25 ˚C CIB (EB) Capacitance (pF) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Typical Capacitances vs Reverse Voltage REV.0.2-JUL.18.2009 PAGE . 3 MMBT3904FN3 MOUNTING PAD LAYOUT DFN 3L 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.02 8 (0.70) 0.004 (0.10) 0.02 7 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.2-JUL.18.2009 0.010 (0.25) 0.024 (0.60) PAGE . 4