MMBT3906FN3

MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives 40 Volts POWER 250 mWatts DFN 3L 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021(0.55) Unit : inch(mm) 0.0 22 (0.55) 0.047(0.45) 0.002(0.05) MAX. MECHANICAL DATA Case: DFN 3L, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Marking: AD 0.013(0.32) 0.008(0.22) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.022(0.55) 0.047(0.45) 0.014(0.20) 3 2 1 ABSOLUTE RATINGS Parameter Collector - E mitter Voltage Collector - B ase Voltage Emitter - B ase Voltage Collector Current - C ontinuous Symbol VCEO VCBO VEBO IC 0.008 (0.20) 0.004(0.10) 0.008 (0.20) Value -40 -40 -5.0 -200 0.004(0.10) Units V V V mA THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient J unc ti o n Te m p e r a tur e S to r a g e Te m p e r a tur e Symbol PTOT RJA TJ T S TG Value 250 500 -5 5 t o + 1 5 0 -5 5 t o + 1 5 0 Units mW O C/W O C C O Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.2-JUL.18.2009 PAGE . 1 MMBT3906FN3 ELECTRICAL CHARACTERISTICS T =25oC A P a r a me te r C o lle c to r - E mi tte r B r e a k d o wn Vo lta g e C o lle c to r - B a s e B r e a k d o wn Vo lta g e E mi tte r - B a s e B re a k d o wn Vo lta g e B a s e C uto ff C urre nt C o lle c t o r C uto ff C ur r e nt S ymb o l Te s t C o nd i ti o n MIN. -40 -40 - 5 .0 60 80 100 60 30 -0.65 TYP. MA X . -5 0 -5 0 300 -0 .2 5 -0 .4 -0 .8 5 -0 .9 5 4 .5 10 35 35 225 75 Uni ts V V V nA nA V ( B R) C E O IC =- 1 .0 mA , IB =0 V ( B R) C B O IC =- 1 0 uA , IE = 0 V (B R) E B O IB L IC E X IE =- 1 0 uA , IC = 0 V C E = -3 0 V, V E B =- 3 .0 V V C E = -3 0 V, V E B =- 3 .0 V IC = - 0 .1 mA , V C E = -1 .0 V IC = - 1 .0 mA , V C E = -1 .0 V IC =- 1 0 mA , V C E = -1 .0 V IC = - 5 0 mA , V C E = -1 .0 V IC = - 1 0 0 mA , V C E = - 1 .0 V IC = - 1 0 mA , IB = -1 .0 mA IC = - 5 0 mA , IB = -5 .0 mA IC = - 1 0 mA , IB = -1 .0 mA IC = - 5 0 mA , IB = -5 .0 mA V C B = -5 V, IE = 0 , f = 1 MHz V E B = - 0 .5 V, IC = 0 , f= 1 MHz V C C = -3 V,V B E =- 0 .5 V, IC = -1 0 mA ,I B =- 1 .0 mA V C C = -3 V,V B E =- 0 .5 V, IC = -1 0 mA ,I B =- 1 .0 mA V C C = -3 V,IC =- 1 0 mA IB 1 =IB 2 =- 1 .0 mA V C C = -3 V,IC =- 1 0 mA IB 1 =IB 2 =- 1 .0 mA D C C ur r e nt G a i n ( No te 2 ) hF E - C o lle c t o r - E mi t t e r S a t ur a t i o n Vo lta g e ( No te 2 ) B a s e - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) C o lle c to r - B a s e C a p a c i ta nc e E mi tte r - B a s e C a p a c i t a nc e D e la y Ti me Ri s e Ti me S to r a g e Ti me F a ll Ti me V C E (S AT) V B E (S AT) C CBO C EBO td tr ts tf V V pF pF ns ns ns ns Note 2: Pulse Test: Pulse Width < 3 00 us, Duty Cycle < 2 .0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V 27 5 Ω < 1ns 10K Ω CS* < 4pF 0 0 .5V -1 0.9 V 1N916 30 0 n s D u ty C yc le ~ 2 .0% D e la y a n d R is e T im e E q u iv a le n t T e s t C irc u it 3V 275 Ω < 1ns +9.1V 0 10K Ω C S * < 4pF C S * < 4pF 1N916 -10.9V 10 to 500us Duty Cycle ~ 2.0% S torage and Fall Time Equivalent Test Circuit REV.0.2-JUL.18.2009 PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 300 TJ = 150˚ C 250 1.0 1.2 VCE = 1V 200 hFE TJ = 100˚ C -VBE (V) 0.8 TJ = 25˚ C 0.6 TJ = 100˚ C 0.4 TJ = 150˚ C 150 TJ = 25˚ C 100 50 VCE = 1V 0 0.01 0.2 0.1 1 10 100 1000 0.0 0.01 0.1 1 10 100 1000 Collector Current, -IC (mA) Fig. 1. Typical hFE vs. Collector Current 1.00 IC/IB = 10 Fig. 2. Typical VBE vs. Collector Current 1.000 TJ = 25˚ C Collector Current, -IC (mA) TJ = 100˚ -VCE(sat) (V) 0.10 TJ = 150˚ TJ = 25˚ -VBE(sat) (V TJ = 150˚ C IC/IB = 10 0.01 0.01 0.1 1 10 100 1000 0.100 0.01 0.1 1 10 100 Collector Current, -IC (mA) Fig. 3. Typical VCE (sat) vs. Collector Current 10 Fig. 4. Typical VBE (sat) vs. Collector Current Collector Current, -I C (mA) CIB (EB) Capacitance (pF) COB (CB) 1 -0.1 -1 Reverse Voltage, V -10 R -100 (V) Fig. 5. Typical Capacitances vs. Reverse Voltage REV.0.2-JUL.18.2009 PAGE . 3 MMBT3906FN3 MOUNTING PAD LAYOUT DFN 3L 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.02 8 (0.70) 0.004 (0.10) 0.02 7 (0.68) ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.2-JUL.18.2009 0.010 (0.25) 0.024 (0.60) PAGE . 4