MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE FEATURES
PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401
40V
POWER
225mW
MECHANICAL DATA
Case: SOT-23 Terminals: Solderable per MIL-STD-202, Method 208 Approx Weight: 0.02 grams Marking: M3A
Top View
3 Collector
1 BASE 3 COLLECTOR
1 Base
2 Emitter
2 EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector - Emitter Voltage Collector - Base Voltage Emitter – Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range
VCE0 VCB0 VEB0 IC PTOT TJ, TSTG
-40 -40 -5.0 -600 225 -55 to 150
V V V mA mW ℃
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Thermal Resistance , Junction to Ambient (Note 1)
RθJ A
556
℃/W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.
MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted)
PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT
Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current
V(BR)CE0 IC=-1.0mA, IB=0 V(BR)CB0 IC=-100uA, IE=0 V(BR)EB0 IE=-100uA, IC=0 IBEV ICEX VCE=-35V, VEB=-0.4V VCE=-35V, VEB=-0.4V IC=-0.1mA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V
-40 -40 -5.0 30 60 100 100 20 -0.75 200 -
-
-100 -100 300 -0.4 -0.75 -0.95 -1.3 8.5 30 15 20 225 30
V V V nA nA
DC Current Gain
hFE
IC=-10mA, VCE=-1.0V IC=-150mA, VCE=-2.0V IC=-500mA, VCE=-2.0V IC=-150mA, IB=-15 mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-20mA, VCE=-10V, f=100MHz VCB=-5.0V, IE=0, f=1MHz VCB=-0.5V, IC=0, f=1MHz VCC=-30V, VBE=-2.0V, IC=-150mA, IB1=-15mA VCC=-30V, IC=-150mA, IB1=IB2=15mA
-
Collector - Emitter Saturation Voltage
VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf
V
Base - Emitter Saturation Voltage
V
Current-Gain – Bandwidth Product Collector - Base Capacitance Emitter - Base Capacitance Delay Time Rise Time Storage Time Fall Time
MHz pF pF ns ns ns ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
200Ω < 2ns 0 +2V 1.0KΩ CS < 10pF 1N916
1 to 100us Duty Cycle = 2.0% 0 1N916 +4V
很抱歉,暂时无法提供与“MMBT4403”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+0.05415
- 100+0.05054
- 300+0.04693
- 500+0.04332
- 2000+0.04151
- 5000+0.04043
- 国内价格
- 1+0.11258
- 100+0.10507
- 300+0.09757
- 500+0.09006
- 2000+0.08631
- 5000+0.08406
- 国内价格
- 1+0.05003
- 10+0.04568
- 30+0.04481
- 国内价格
- 5+0.05844
- 20+0.05319
- 100+0.04794
- 500+0.0427
- 1000+0.04025
- 2000+0.0385
- 国内价格
- 1+0.05984
- 100+0.05662
- 300+0.0534
- 500+0.05018
- 2000+0.04857
- 5000+0.0476
- 国内价格
- 1+0.06916
- 30+0.06656
- 100+0.06136
- 500+0.05616
- 1000+0.05356
- 国内价格
- 50+0.09349
- 150+0.07975
- 1000+0.066
- 5000+0.0605
- 国内价格
- 10+0.14623
- 50+0.13526
- 200+0.12612
- 600+0.11698
- 1500+0.10967
- 3000+0.1051
- 国内价格
- 1+0.02665
- 30+0.0257
- 100+0.02475
- 500+0.02285
- 1000+0.02189
- 2000+0.02132
- 国内价格
- 5+0.16364
- 20+0.16064
- 100+0.15463