MMBT4403W_R1_00001

MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 200mW SOT-323 Unit: inch (mm) FEATURES PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) Collector-emitter voltage VCE = -40V 0.087(2.20) 0.078(2.00) 40V 0.004(0.10)MIN. VOLTAGE Collector current IC =-600mA 0.054(1.35) 0.045(1.15) Complimentary (NPN) device: MMBT4401W Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) (Halogen Free) MECHANICAL DATA 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. Case: SOT-323 0.016(0.40) 0.008(0.20) Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight: 0.005gram Marking: M3A 3 COLLECTOR Top View 3 Collector 1 BASE 1 Base 2 EMITTER 2 Emitter ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage VCE0 -40 V Collector - Base Voltage VCB0 -40 V Emitter – Base Voltage VEB0 -5.0 V Collector Current - Continuous IC -600 mA Max Power Dissipation (Note 1) PTOT 200 mW TJ, TSTG -55 to 150 ℃ PARAMETER SYMBOL VALUE UNIT Thermal Resistance , Junction to Ambient (Note 1) RθJ A 625 ℃/W Junction and Storage Temperature Range THERMAL CHARACTERISTICS Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad. REV.0.1-MAR.5.2009 PAGE . 1 MMBT4403W ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage V(BR)CEO IC=-1.0mA, IB=0 -40 - - V Collector - Base Breakdown Voltage V(BR)CBO IC=-100uA, IE=0 -40 - - V Emitter - Base Breakdown Voltage V(BR)EBO IE=-100uA, IC=0 -5.0 - - V Base Cutoff Current IBEV VCE=-35V, VEB=-0.4V - - -100 nA Collector Cutoff Current ICEX VCE=-35V, VEB=-0.4V - - -100 nA IC=-0.1mA, VCE=-1.0V 30 - - IC=-1.0mA, VCE=-1.0V 60 - - IC=-10mA, VCE=-1.0V 100 - - IC=-150mA, VCE=-2.0V 100 - 300 IC=-500mA, VCE=-2.0V 20 - - IC=-150mA, IB=-15 mA - - -0.4 IC=-500mA, IB=-50mA - - -0.75 IC=-150mA, IB=-15mA -0.75 - -0.95 IC=-500mA, IB=-50mA - - -1.3 200 - - MHz DC Current Gain hFE Collector - Emitter Saturation Voltage VCE(SAT) Base - Emitter Saturation Voltage VBE(SAT) Current-Gain – Bandwidth Product fT IC=-20mA, VCE=-10V, f=100MHz - V V Collector - Base Capacitance CCBO VCB=-5.0V, IE=0, f=1MHz - - 8.5 pF Emitter - Base Capacitance CEBO VCB=-0.5V, IC=0, f=1MHz - - 30 pF Delay Time td VCC=-30V, VBE=-2.0V, - - 15 ns Rise Time tr IC=-150mA, IB1=-15mA - - 20 ns Storage Time ts VCC=-30V, IC=-150mA, - - 225 ns Fall Time tf IB1=IB2=15mA - - 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUITS -30V -30V 200Ω < 2ns 0 200Ω