MMBT4403_09

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401 40V POWER 225mW In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23 Terminals: Solderable per MIL-STD-750, Method 2026 Approx Weight: 0.008 grams Marking: M3A Top View 3 Collector 1 BASE 3 COLLECTOR 1 Base 2 Emitter 2 EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector - Emitter Voltage Collector - Base Voltage Emitter – Base Voltage Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range VCEO VCBO VEBO IC PTOT TJ, TSTG -40 -40 -5.0 -600 225 -55 to 150 V V V mA mW ℃ THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Thermal Resistance , Junction to Ambient (Note 1) RθJ A 556 ℃/W Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. using minimum recommended pad. REV.0.1-MAR.5.2009 PAGE . 1 MMBT4403 ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO IC=-1.0mA, IB=0 V(BR)CBO IC=-100uA, IE=0 V(BR)EBO IE=-100uA, IC=0 IBEV ICEX VCE=-35V, VEB=-0.4V VCE=-35V, VEB=-0.4V IC=-0.1mA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V -40 -40 -5.0 30 60 100 100 20 -0.75 200 - - -100 -100 300 -0.4 -0.75 -0.95 -1.3 8.5 30 15 20 225 30 V V V nA nA DC Current Gain hFE IC=-10mA, VCE=-1.0V IC=-150mA, VCE=-2.0V IC=-500mA, VCE=-2.0V IC=-150mA, IB=-15 mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-20mA, VCE=-10V, f=100MHz VCB=-5.0V, IE=0, f=1MHz VCB=-0.5V, IC=0, f=1MHz VCC=-30V, VBE=-2.0V, IC=-150mA, IB1=-15mA VCC=-30V, IC=-150mA, IB1=IB2=15mA - Collector - Emitter Saturation Voltage VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf V Base - Emitter Saturation Voltage V Current-Gain – Bandwidth Product Collector - Base Capacitance Emitter - Base Capacitance Delay Time Rise Time Storage Time Fall Time MHz pF pF ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS -30V -30V 200Ω < 2ns 0 +2V 1.0KΩ CS < 10pF 1N916 1 to 100us Duty Cycle = 2.0% 0 1N916 +4V