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MMBZ5221BW_R1_00001

MMBZ5221BW_R1_00001

  • 厂商:

    PANJIT(强茂)

  • 封装:

    SOT-323-3

  • 描述:

    SURFACE MOUNT SILICON ZENER DIOD

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBZ5221BW_R1_00001 数据手册
MMBZ5221BW~MMBZ5262BW SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 51 Volts POWER 200 mWatts • Planar Die construction • 200mW Power Dissipation 0.087(2.20) 0.070(1.80) • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN. FEATURES • In compliance with EU RoHS 2002/95/EC directives 0.054(1.35) 0.045(1.15) MECHANICAL DATA 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) • Case: SOT-323, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx. Weight: 0.0001 ounces, 0.005 grams 0.004(0.10)MAX. 0.044(1.10) 0.035(0.90) 0.016(0.40) 0.008(0.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNITS Power Dissipation @TA=25oC(Note 1) PD 200 mW Operating Junction Temperature and Storage Temperature Range TJ -55 to +150 O C NOTES: 1. Mounted on 100cm 2(1mm thick) copper areas. September 29,2011-REV.01 PAGE . 1 MMBZ5221BW~MMBZ5262BW Nominal Zener Voltage Part Number Z ZT @ I ZT V Z @ IZT No m. V Max Reverse Leakage Current Max. Zener Impedance Z ZK @ I ZK IR @ VR Mi n. V Ma x. V Ω mA Ω mA μA V Marking Code 200 mWatts Zener Diodes MMBZ5221BW 2.4 2.28 2.52 30 20.0 1200 0.25 100 1.0 C1 MMBZ5222BW 2.5 2.38 2.63 30 20.0 1250 0.25 100 1.0 C2 MMBZ5223BW 2.7 2.57 2.84 30 20.0 1300 0.25 75 1.0 C3 MMBZ5224BW 2.8 2.66 2.94 30 20 1400 0.25 75 1.0 C4 MMBZ5225BW 3.0 2.85 3.15 30 20.0 1600 0.25 50 1.0 C5 MMBZ5226BW 3.3 3.14 3.47 28 20.0 1600 0.25 25 1.0 D1 MMBZ5227BW 3.6 3.42 3.78 24 20.0 1700 0.25 15 1.0 D2 MMBZ5228BW 3.9 3.71 4.10 23 20.0 1900 0.25 10 1.0 D3 MMBZ5229BW 4.3 4.09 4.52 22 20.0 2000 0.25 5.0 1.0 D4 MMBZ5230BW 4.7 4.47 4.94 19 20.0 1900 0.25 5.0 2.0 D5 MMBZ5231BW 5.1 4.85 5.36 17 20.0 1600 0.25 5.0 2.0 E1 MMBZ5232BW 5.6 5.32 5.88 11 20.0 1600 0.25 5.0 3.0 E2 MMBZ5233BW 6.0 5.7 6.3 7.0 20 1600 0.25 5.0 3.5 E3 MMBZ5234BW 6.2 5.89 6.51 7 20.0 1000 0.25 5.0 4.0 E4 MMBZ5235BW 6.8 6.46 7.14 5 20.0 750 0.25 3.0 5.0 E5 MMBZ5236BW 7.5 7.13 7.88 6 20.0 500 0.25 3.0 6.0 F1 MMBZ5237BW 8.2 7.79 8.61 8 20.0 500 0.25 3.0 6.0 F2 MMBZ5238BW 8.7 8.27 9.14 8 20.0 600 0.25 3.0 6.5 F3 MMBZ5239BW 9.1 8.65 9.56 10 20.0 600 0.25 3.0 6.5 F4 MMBZ5240BW 10 9.50 10.50 17 20.0 600 0.25 3.0 8.0 F5 MMBZ5241BW 11 10.45 11.55 22 20.0 600 0.25 2.0 8.4 H1 MMBZ5242BW 12 11.40 12.60 30 20.0 600 0.25 1.0 9.1 H2 MMBZ5243BW 13 12.35 13.65 13 9.5 600 0.25 0.5 9.9 H3 MMBZ5244BW 14 13.30 14.70 15 9.0 600 0.25 0.1 10.5 H4 MMBZ5245BW 15 14.25 15.75 16 8.5 600 0.25 0.1 11 H5 MMBZ5246BW 16 15.20 16.80 17 7.8 600 0.25 0.1 12 J1 MMBZ5247BW 17 16.15 17.85 19 7.5 600 0.25 0.1 13 J2 MMBZ5248BW 18 17.10 18.90 21 7.0 600 0.25 0.1 14 J3 MMBZ5249BW 19 18.05 19.95 23 6.6 600 0.25 0.1 14 J4 MMBZ5250BW 20 19.00 21.00 25 6.2 600 0.25 0.1 15 J5 MMBZ5251BW 22 20.90 23.10 29 5.6 600 0.25 0.1 17 K1 MMBZ5252BW 24 22.80 25.20 33 5.2 600 0.25 0.1 18 K2 MMBZ5253BW 25 23.75 26.25 35 5.0 600 0.25 0.1 19 K3 MMBZ5254BW 27 25.65 28.35 41 5.0 600 0.25 0.1 21 K4 MMBZ5255BW 28 26.60 29.40 44 4.5 600 0.25 0.1 21 K5 MMBZ5256BW 30 28.50 31.50 49 4.2 600 0.25 0.1 23 M1 MMBZ5257BW 33 31.35 34.65 58 3.8 700 0.25 0.1 25 M2 MMBZ5258BW 36 34.20 37.80 70 3.4 700 0.25 0.1 27 M3 MMBZ5259BW 39 37.05 40.95 80 3.2 800 0.25 0.1 30 M4 MMBZ5260BW 43 40.85 45.15 93 3.0 900 0.25 0.1 33 M5 MMBZ5261BW 47 44.65 49.35 105 2.7 1000 0.25 0.1 36 N1 MMBZ5262BW 51 48.45 53.55 125 2.5 1100 0.25 0.1 39 N2 September 29,2011-REV.01 PAGE . 2 POWER DISSIPATION, Watts 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TEMPERATURE COEFFICIENT,(mV/ OC) MMBZ5221BW~MMBZ5262BW 100 10 1 10 100 NOMINAL ZENER VOLTAGE ,VOLTS TEMPERATURE ( OC) Fig.2 TEMPERATURE COEFFICIENTS Fig.1 STEADY STATE POWER DERATING 1000 FORWARD CURRENT ,mA LEAKAGE CURRENT , m A 1000 100 10 1 O +150 C 0.1 0.01 O 0.001 +25 C 0.0001 -55 C 0.00001 O 0 10 20 30 40 50 60 70 NORMAL ZENER VOLTAGE, VOLTS Fig.3 TYPICAL LEAKAGE CURRENT September 29,2011-REV.01 80 90 100 10 150OC O 75 C 25OC 1 0.4 0.5 0.6 0.7 5OC 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE, VOLTS Fig.4 TYPICAL FORWARD VOLTAGE PAGE . 3 MMBZ5221BW~MMBZ5262BW MOUNTING PAD LAYOUT Unit:inch(mm) SOT-323 0.073 (1.85) 0.034 (0.86) 0.026 (0.66) 0.026 (0.65) 0.026 (0.65) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. September 29,2011-REV.01 PAGE . 4
MMBZ5221BW_R1_00001
物料型号:文档列出了多种型号的硅齐纳二极管,型号从MMBZ5221BW到MMBZ5262BW。

器件简介:这些器件是表面安装的硅齐纳二极管,具有多种额定电压,从2.4V到51V,功率为200毫瓦。它们具有平面芯片结构,符合EU RoHS 2002/95/EC指令。

引脚分配:器件采用SOT-323塑料封装,引脚可焊性符合MIL-STD-750标准方法2026。

参数特性:包括功率耗散200毫瓦,工作结温和存储温度范围为-55至+150摄氏度。

功能详解:文档提供了稳态功率降额曲线、温度系数、典型漏电流和典型正向电压等图表,以展示器件在不同条件下的性能。

应用信息:虽然文档没有明确列出应用信息,但根据其特性,这些齐纳二极管可能适用于电路保护、电压稳定等应用。

封装信息:封装尺寸和重量信息在机械数据部分给出,重量大约为0.0001盎司或0.005克。
MMBZ5221BW_R1_00001 价格&库存

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