MMDT2222ATB6

MMDT2222ATB6 DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-563 package. This device is ideal for portable applications where board space is at a premium. FEATURES Electrically Isolated Dual NPN Switching Transistor In compliance with EU RoHS 2002/95/EC directives 6 5 4 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: TU 1 2 3 MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation (Note 1) TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEBO IC PD TJ Tstg Value 75 40 6.0 600 200 -55 to +150 -55 to +150 Units V V V mA mW °C °C Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units °C/W Note 1. FR-4 board 60 x 70 x 1mm with minimum recommended pad layout 1/19/2009 Page 1 www.panjit.com MMDT2222ATB6 ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Parameter Symbol Conditions Min 40 75 6.0 35 50 75 50 100 40 35 0.6 300 Typ Max 10 20 300 0.3 1.0 1.2 2.0 8.0 25 10 25 225 60 V V V MHz pF pF ns ns ns ns Units V V V nA nA Collector-Emitter Breakdown Voltage V (BR)CEO I C = 10mA Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = 10uA ICEX IBL VCE= 60V, V EB= 3.0V V CE= 60V, V EB 3.0V = I C = 0.1mA, V CE= 10V I C = 1.0mA, V CE= 10V I C = 10mA, V CE= 10V DC Current Gain (Note 2) h FE IC=10mA, VCE =10V, TJ =-55C I C = 150mA, V CE= 10V I C = 500mA, V CE= 10V I C = 150mA, V CE= 1.0V Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA V CE= 20V, I C= 20mA f = 100MHz VCB= 10V, f =1.0MHz VEB = 0.5V, f =1.0MHz VCC = 30V, I C=150mA VBE(off) = -0.5V, IB1= 15mA V CC= 30V, I C=150mA I B1= I B2= 15mA Note 2. Short duration test pulse used to minimize self-heating 1/14/2009 Page 2 www.panjit.com MMDT2222ATB6 CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted 350 300 250 TJ = 100° C TJ = 150° C 0.8 0.7 0.6 0.5 V BE (on) TJ = 25° C TJ = 25° C TJ = 100° C TJ = 150° C 200 hFE 0.4 0.3 150 100 50 0 0.1 1 VCE = 10V 0.2 0.1 0.0 10 100 1000 VCE = 10V 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 1. hFE vs. Ic 1.2 TJ = 150 °C Fig. 2. VBE vs. Ic 500 450 400 350 V CE (sat) (mV) 1.0 0.8 V BE (sat) (V) IC/IB = 10 300 250 200 150 100 50 0 0.1 IC/IB = 10 TJ = 25 °C 0.6 TJ = 150 °C 0.4 0.2 TJ = 25 °C TJ = 100 °C 0.0 1 10 100 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. VCE(sat) vs. Ic Fig. 4. VBE(sat) vs. Ic 100 f=1 MHz Capacitance (p F CIB (EB ) 10 COB (CB ) 1 0.1 1 10 100 Reverse Voltage, V R (V) Fig. 5. Capacitances 1/14/2009 Page 3 www.panjit.com MMDT2222ATB6 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS SOT-563 ORDERING INFORMATION MMDT2222ATB6 T/R7 - 4,000 units per 7 inch reel MMDT2222ATB6 T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 200 9 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 1/14/2009 Page 4 www.panjit.com