MMDT2227A

MMDT2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR VOLTAGE FEATURES 60 Volts POWER 200 mW • Complementary Pair • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • One MMDT2222A-Type NPN One MMDT2907A-Type PNP • Ideal for Low Power Amplification and Switching • Also Available in Lead Free Version • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363 • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Approx Weight: 0.006 grams • Device Marking : S0A 6 5 4 1 2 3 Fig.55 Maximum Ratings MMDT2222A Section @ TA=25OC unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operation and Storage and Temperature Range Symbol MMDT2222A 75 40 6.0 600 225 625 -55 to +150 Units V V V mA mW O V C BO V C EO V EBO IC Pd RΘJA TJ,TSTG C/W O C STAD-APR.25.2007 PAGE . 1 MMDT2227A Maximum Ratings MMDT2907A Section @ TA=25OC unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operation and Storage and Temperature Range Symbol MMDT2907A -60 -60 -5.0 -600 200 625 -55 to +150 Units V V V mA mW O V C BO V C EO V EBO IC Pd RΘJA TJ,TSTG C/W O C STAD-APR.25.2007 PAGE . 2 MMDT2227A Electrical Characteristics, MMDT222A Section @ TA=25OC unless otherwise specified Characteristic Symbol Min. Max. Unit Test Condition OFF CHARACTERISTICS(Note 2) IC=-10µA,IE=0 IC=10mA,IB=0 IE=-10µA,IC=0 VCB=60V,IE=0 VCB=60V,IE=0,TA=150OC VCE=60V,VEB(OFF)=3.0V VEB=3.0V,IC=0 VCE=60V,VEB(OFF)=3.0V Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL 75 - V Collector-Emitter Breakdown Voltage 40 - V Emitter-Base Breakdown Voltage 6.0 - V nA µA nA Collector Cutoff Current - 10 Collector Cutoff Current - 10 Emitter Cutoff Current - 100 nA Base Cutoff Current - 20 nA ON CHARACTERISTICS(Note 2) 35 50 75 100 40 50 50 0.6 300 0.3 1.0 1.2 2.0 IC=100µA,VCE=10V IC=1.0mA,VCE=10V IC=10mA,VCE=10V IC=150mA,VCE=10V IC=500mA,VCE=10V IC=10mA,VCE=10V,TA=-55OC IC=150mA,VCE=1.0V IC=150mA,IB=15mA IC=500mA,IB=50mA IC=150mA,IB=15mA IC=500mA,IB=50mA DC Current Gain hFE - Collector-Emitter Saturation Voltage VCE(SAT) VBE(SAT) V Base-Emitter Saturation Voltage V SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo C i bo fT NF - 8 pF VCB=10V,f=1.0MHz,IE=0 VEB=0.5V,f=1.0MHz,IC=0 VCE=-20V,IC=20mA, f=100MHz VCE=10V,IC=100µA, RS=1.0kΩ,f=1.0KHz Input Capacitance - 25 pF Current Gain-Bandwidth Product 300 - MHz Noise Figure - 4.0 dB SWITCHING CHARACTERISTICS Delay Time td tr - 10 ns VCC=30V,IC=150mA, VBE(OFF)=-0.5V,IB1=15mA Rise Time - 25 ns STAD-APR.25.2007 PAGE . 3 MMDT2227A Electrical Characteristics, MMDT2907A Section @ TA=25OC unless otherwise specified Characteristic Symbol Min. Max. Unit Test Condition OFF CHARACTERISTICS(Note 2) IC=-10µA,IE=0 IC=-10mA,IB=0 IE=-10µA,IC=0 VCB=-50V,IE=0 VCB=-50V,IE=0,TA=125OC VCE=-30V,VEB(OFF)=-0.5V VCE=-30V,VEB(OFF)=-0.5V Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL -60 - V Collector-Emitter Breakdown Voltage -60 - V Emitter-Base Breakdown Voltage -5.0 - V nA µA nA Collector Cutoff Current - -10 Collector Cutoff Current - -50 Base Cutoff Current - -50 nA ON CHARACTERISTICS(Note 2) 75 100 100 100 50 300 -0.4 -1.6 -1.3 -2.6 IC=-100µA,VCE=-10V IC=-1.0mA,VCE=-10V IC=-10mA,VCE=-10V IC=-150mA,VCE=-10V IC=-500mA,VCE=-10V IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA DC Current Gain hFE - Collector-Emitter Saturation Voltage VCE(SAT) VBE(SAT) V Base-Emitter Saturation Voltage - V SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo C i bo fT - 8 pF VCB=-10V,f=1.0MHz,IE=0 VEB=-2.0V,f=1.0MHz,IC=0 VCE=-20V,IC=-50mA, f=100MHz Input Capacitance - 30 pF Current Gain-Bandwidth Product 200 - MHz SWITCHING CHARACTERISTICS IC=-150mA,VCC=-30V, IB1=-15mA Turn-On Time ton td tr - 45 ns Delay Time - 10 ns VCC=-30V,IC=-150mA, IB1=-15mA Rise Time - 40 ns STAD-APR.25.2007 PAGE . 4 MMDT2227A 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 1 (2222A) Typical Capacitance IB BASE CURRENT (mA) Fig. 2 (2222A) Typical Collector Saturation Region 30 20 C, CAPACITANCE (pF) Cibo VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 0.01 0.1 1 10 100 REVERSE VOLTS (V) Fig. 3 (2907A) Typical Capacitance IB BASE CURRENT (mA) Fig. 4 (2907A) Typical Collector Saturation Region STAD-APR.25.2007 PAGE . 5 MMDT2227A MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 6