MMDT2907A

MMDT2907A DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -60V 0.087(2.20) 0.074(1.90) 0.056(1.40) 0.047(1.20) 60 Volts POWER 150 mW 0.012(0.30) 0.005(0.15) 0.030(0.75) 0.021(0.55) 0.054(1.35) 0.045(1.15) • Collector current IC = -600mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363 • Apporx. Weight: 0.0002 ounce, 0.006 gram • Device Marking : M7A 0.044(1.10) MAX. 0.010(0.25) • Terminals : Solderable per MIL-STD-750,Method 2026 6 5 4 0.040(1.00) 0.031(0.80) 0.018(0.45) 0.006(0.15) 0.087(2.20) 0.078(2.00) 1 2 3 Fig.53 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO V EBO IC Value -60 -60 -5.0 -600 Units V V V mA THERMAL CHATACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Storage Temperature Junction Temperaure Symbol P TOT RθJA TSTG TJ Value 150 830 -55 to +150 -55 to +150 O 0.010(0.25) 0.003(0.08) 0.10 MAX. Units mW C/W O C C O Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. May 12.2010-REV.00 PAGE . 1 MMDT2907A ELECTRICAL CHARACTERISTICS Parameter Collector-Emitter Breakdown Voltage (TJ=25OC, unless otherwise noted) Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Test Condition IC=-10mA,IB=0 IC=-10μA,IE=0 IE=-10μA,IC=0 V CE=-30V,VEB=-0.5V V CE=-30V,VEB=-0.5V VCE=-50V,IE=0 Min. -60 Typ. - Max. - Units V Collector-Base Breakdown Voltage -60 - - V Emitter-Base Breakdown Voltage -5.0 - - V Base Cutoff Current - - -50 nA - - -50 nA Collector Cutoff Current ICBO - - -10 nA μA VCE=-50V,IE=0 TJ=125OC 75 100 100 100 50 - - -10 300 -0.4 -1.6 -1.3 -2.6 8.0 DC Current Gain hFE IC=-0.1mA,VCE=-10V IC=-1.0mA,VCE=-10V IC=-10mA,VCE=-10V IC=-150mA,VCE=-10V IC=-500mA,VCE=-10V IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA VCB=-10V,IE=0,f=1MHz V CB=-2V,IC=0,f=1MHz IC=-50mA,VCE=-20V, f=100MHz VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA VCC=-30V,VBE=-0.5V, IC=-150mA,IB1=-15mA VCC=-6V,IC=-150mA, IB1=IB2=-15mA VCC=-6V,IC=-150mA, IB1=IB2=-15mA VCC=-6V,IC=-150mA, IB1=IB2=-15mA - Collector-Emitter Saturation Voltage VCE(SAT) VBE(SAT) C CBO C EBO FT ton td tr toff ts tf V Base-Emitter Saturation Voltage V Collector-Base Capacitance pF Emitter-Base Capacitance - - 30 pF Current Gain-Bandwidth Product 200 - - MHz Turn-On Time - - 45 ns Delay Time - - 10 ns Rise Time - - 40 ns Turn-Off Time - - 100 ns Storage Time - - 80 ns Fall Time - - 30 ns May 12.2010-REV.00 PAGE . 2 MMDT2907A h FE, NORMALIZED CURRENT GAIN 3.0 2.0 VCE=-1.0V VCE=-10V T J=125 C 25 OC 1.0 0.7 0.5 0.3 0.2 -0.1 -55 C O O -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, COLLECTOR CURRENT (mA) Fig.1-DC Cuttent Gain -1.0 V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -0.8 I C=-1.0mA -10mA -100mA -500mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 I B, BASE CURRENT (mA) Fig.2-Collector Saturation Region 300 200 100 70 50 30 20 10 7.0 5.0 500 tr 300 V CC=-30V I C/I B=10 O T J=25 C t, TIME (ns) tf 200 100 70 50 30 20 10 7.0 5.0 -5.0 -7.0 -10 V CC=-30V I C/I B=10 I B1=I B2 T J=25 OC t, TIME (ns) t s=t s-1/8t f , td@ V BE(OFF)=0V -20 -30 -50 -70 -100 2.0V -200 -300 -500 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 I C, COLLECTOR CURRENT Fig.3-Turn-On Time I C, COLLECTOR CURRENT (mA) Fig.4-Turn-Off Time May 12.2010-REV.00 PAGE . 3 MMDT2907A 10 10 f=1.0kHz NF, NOISE FIGURE (dB) 8.0 I C=-1.0mA,R S=430 W -500 m A,R S=560 W -50 m A,R S =2.7k W -100 m A,R S =1.6 k W NF, NOISE FIGURE (dB) 8.0 6.0 6.0 I C=-50 m A -100 m A -500 m A -1.0mA 4.0 4.0 R S=OPTIMUM SOURCE RESISTANCE 2.0 2.0 0 0.01 0.02 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k f, FREQUENCY (kHz) Fig.5-Frequency Effects R S, SURGE RESISTANCE (OHMS) Fig.6-Source Resistance Effects 30 f T , CURRE NT-GAIN -BANDW IDTH PRODU CT (MHz) 400 C eb 300 200 20 C, CAPACITA NCE (pF) 10 7.0 5.0 C cb 100 80 60 40 30 20 -1.0 -2.0 V CE=-20V O T J=25 C 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0-3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) Fig.7-Capacitances I C, COLLECTOR CURRENT (mA) Fig.8-Current-Gain-Bandwidth Product -1.0 T J=25 C O +0.5 V BE(sat)@I C/I B=10 0 R QVC for V CE(sat) O COEFFICIEN T (mV/ C) -0.8 V, VOLTAGE (VOLTS) -0.6 V BE(on)@V CE=-10V -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -0.4 -0.2 V CE(sat)@ I C/I B=10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 R QVB for V BE -50 -100-200 -500 -5.0 -10 -20 -50 -100 -200 -500 I C, COLLECTOR CURRENT (mA) Fig.9-On Voltage I C, COLLECTOR CURRENT (mA) Fig.10-Temperature Coefficients May 12.2010-REV.00 PAGE . 4 MMDT2907A MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. May 12.2010-REV.00 PAGE . 5