MMDT3904
DUAL SURFACE MOUNT NPN TRANSISTORS
This device contains two electrically-isolated 2N3904 NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium.
4 5 6 2 1 3
SOT- 363
FEATURES
Electrically Isolated Dual NPN Switching Transistor Lead-Free Plating (100% matte tin finish)
6
5
4
APPLICATIONS
General Purpose Amplifier Applications Hand-Held Computers, PDAs
Device Marking Code: S1A
1
2
3
MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1)
TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEB IC PD TJ Tstg Value 60 40 6.0 200 200 -55 to +150 -55 to +150 Units V V V mA mW °C °C
Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units °C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/20/2005
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MMDT3904
ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted
Parameter Symbol Conditions Min 40 60 6.0 40 70 100 60 30 0.65 300 Typ Max 50 50 300 0.2 0.3 0.85 0.95 4.0 8.0 35 35 200 50 V V V MHz pF pF ns ns ns ns Units V V V nA nA
Collector-Emitter Breakdown Voltage V (BR)CEO I C = 1.0mA Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = 10uA ICEX IBL VCE= 30V, V EB 3.0V = VCE= 30V, V EB 3.0V = I C = 0.1mA, V CE= 1.0V I C = 1.0mA, V CE= 1.0V DC Current Gain (Note 2) h FE I C = 10mA, V CE= 1.0V I C = 50mA, V CE 1.0V = I C = 100mA, V CE= 1.0V Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf I C = 10mA, I B= 1.0mA I C = 50mA, I B= 5.0mA I C = 10mA, I B= 1.0mA I C = 50mA, I B= 5.0mA V CE= 20V, I C= 10mA f = 100MHz VCB= 5.0V, f =1.0MHz VEB = 0.5V, f =1.0MHz VCC = 3.0V, I C= 10mA VBE(off) = -0.5V, IB1= -1.0mA V CC= 3.0V, I C= 10mA I B1= I B2= 1.0mA
Note 2. Short duration test pulse used to minimize self-heating
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V +3V 275Ω 300ns Duty Cycle ~ 2.0% 275 275Ω +10.9V 0 0 -0.5V < 1ns CS* < 4pF -9.1V < 1ns 10KΩ 1N916 10 to 500us Duty Cycle ~ 2.0% CS* < 4pF
+10.9V
10KΩ
Delay and Rise Time Equivalent Test Circuit
Storage and Fall Time Equivalent Test Circuit Storage
9/20/2005
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MMDT3904
CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted
300 250 200 hFE 150 TJ = 25 °C 100 50 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 150 °C VCE = 1V
1.400 1.200 1.000
TJ = 100 °C
VBE (V) 0.800 TJ = 25 °C 0.600 0.400 0.200 0.000 0.01 0.1 1 TJ = 150
TJ = 100 °C
VCE = 1V
10
100
1000
Collector Current, IC (mA)
Fig. 1. hFE vs. Ic
1.000
Fig. 2. VBE vs. Ic
1.0 TJ = 25 °C
IC/IB = 10
TJ = 150 °C
TJ = 100 °C
VCE(sat) (V)
0.100 TJ = 25 °C
VBE(sat) (V)
TJ = 150 °C
IC/IB = 10
0.010 0.01 0.1 1 10 100 1000 Collector Current, IC (mA)
0.1 0.01 0.1 1 Collector Current, IC (mA) 10 100
Fig. 3. VCE(sat) vs. Ic
10
Fig. 4. VBE(sat) vs. Ic
TJ = 25 °C CIB (EB) Capacitance (pF)
COB (CB)
1 0.1 1 10 100 Reverse Voltage, VR (V)
Fig. 5. Capacitances 9/20/2005 Page 3 www.panjit.com
MMDT3904
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
MMDT3904 T/R7 - 3,000 units per 7 inch reel MMDT3904 T/R13 -10,000 units per 13 inch reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others.
9/20/2005
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