MMDT3906
DUAL SURFACE MOUNT PNP TRANSISTORS
This device contains two electrically-isolated 2N3906 PNP transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium.
4 5 6 2 1 3
SOT- 363
FEATURES
Electrically Isolated Dual PNP Switching Transistor Lead-Free Plating (100% matte tin finish)
6
5
4
APPLICATIONS
General Purpose Amplifier Applications Hand-Held Computers, PDAs
Device Marking Code: S2A
1
2
3
MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1)
TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEB IC PD TJ Tstg Value -40 -40 -5.0 -200 200 -55 to +150 -55 to +150 Units V V V mA mW °C °C
Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units °C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/20/2005
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MMDT3906
ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted
Parameter Symbol Conditions Min -40 -40 -5.0 60 80 100 60 30 -0.65 250 Typ Max -50 -50 300 -0.25 -0.40 -0.85 -0.95 4.5 10 35 35 225 75 V V V MHz pF pF ns ns ns ns Units V V V nA nA
Collector-Emitter Breakdown Voltage V (BR)CEO I C = -1.0mA Collector-Base Breakdown Voltage V (BR)CBO I C = -10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = -10uA ICEX IBL VCE= -30V, V EB= -3.0V VCE= -30V, V EB= -3.0V I C = -0.1mA, VCE = -1.0V I C = -1.0mA, VCE = -1.0V DC Current Gain h FE I C = -10mA, VCE= -1.0V I C = -50mA, V CE= -1.0V I C = -100mA, VCE= -1.0V Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) fT CCBO CEBO td tr ts tf I C = -10mA, I B = -1.0mA I C = -50mA, I B = -5.0mA I C = -10mA, I B = -1.0mA I C = -50mA, I B = -5.0mA V CE= -20V, I C = -10mA f = 100MHz VCB= -5.0V, f =1.0MHz VEB = -0.5V, f =1.0MHz VCC = -3.0V, I C = -10mA VBE(off) = 0.5V, I B1 -1.0mA = V CC= -3.0V, I C= -10mA I B1= I B2= -1.0mA
Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time
Note 2. Short duration test pulse used to minimize self-heating
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
3V
275 Ω < 1ns 0 0.5V 10K Ω C S * < 4pF 1N916
275Ω < 1ns +9.1V 0 1N916 10K Ω CS* < 4pF
-10.9V 300ns Duty Cycle ~ 2.0%
-10.9V 10 to 500us Duty Cycle ~ 2.0%
D elay and Rise Tim e Equivalent Test Circuit
Storage and Fall Time Equivalent Test Circuit
9/20/2005
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MMDT3906
CHARACTERISTICS CURVES (Each Transistor) TJ = 25°C Unless otherwise noted
300 TJ = 150° C 250
1.0 1.2 V CE = 1 V
200
TJ = 100° C
V BE ( V)
0.8 TJ = 2 5° C 0.6 TJ = 1 00° C 0.4 TJ = 1 50° C
hFE
150 TJ = 25° C 100
50 V CE = 1V 0 0.01
0.2
0.1
1
10
100
1000
0.0 0.01
0.1
1
10
100
1000
Colle ctor Curre nt, IC ( m A)
Colle ctor Cur r e nt, IC ( m A)
Fig. 1. hFE vs. Ic
1.00 IC/IB = 10
1.000
Fig. 2. VBE vs. Ic
TJ = 2 5° C
TJ = 1 00°
VCE(sat) (V)
0.10
TJ = 150° TJ = 25°
VBE(sat) (V)
TJ = 1 50° C
IC/IB = 1 0
0.01 0.01
0.1
1
10
100
1000
0.100 0.01
0.1
1
10
100
Colle ctor Curre nt, IC ( m A)
Colle ctor Curr e nt, IC ( m A)
Fig. 3. VCE(sat) vs. Ic
10 CIB (EB)
Fig. 4. VBE(sat) vs. Ic
Capacitance (pF)
COB (CB)
1 0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 5. Capacitances 9/20/2005 Page 3 www.panjit.com
MMDT3906
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
MMDT3906 T/R7 - 3,000 units per 7 inch reel MMDT3906 T/R13 -10,000 units per 13 inch reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others.
9/20/2005
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